Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Francesco Pecora, Emanuele; Zhang, Wei; Yu. Nikiforov, A.; Zhou, Lin; Smith, David J.; Yin, Jian; Paiella, Roberto; Dal Negro, Luca; Moustakas, T. D.

doi:doi:10.1063/1.3681944

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X-ray spatial frequency heterodyne imaging

We derive an expression for the electric field at the image plane from the Kirchhoff-Fresnel integral for a grating in contact with an object in an x-ray, in-line imaging configuration that shows the grating to give a heterodyning effect. We also show how image contrast in a harmonic of the grating is enhanced depending on the first space derivative of the phase function. Experiments are reported where a Fourier component of the image intensity gives contrast at the edges of objects significant...

Highly tunable whispering gallery mode semiconductor lasers with controlled absorber

Tunable semiconductor lasers with controlled absorber based on GaInAsSb/GaAlAsSb quantum well heterostructure was fabricated and experimentally studied. The emission wavelength of these lasers shifts from 2.24 to 2.28 μm when the bias on the control contact decreases from the voltage equal to that on the main electrode to 0 V when the control contact is grounded. The principle of operation of such a device is given.

Deep-UV optical gain has been demonstrated in Al_0.7Ga_0.3N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 ± 9 cm⁻¹ has been measured and the transparency threshold of 5 ± 1 µJ/cm² was experimentally determined, corresponding to 1.4 × 10¹⁷cm⁻³ excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

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KEYWORDS, PACS, and IPC

Keywords

aluminium compounds, band structure, fluctuations, gallium compounds, high-speed optical techniques, III-V semiconductors, molecular beam epitaxial growth, nanostructured materials, optical pumping, semiconductor quantum wells, transparency, ultraviolet spectra, wide band gap semiconductors

PACS

78.67.De

Quantum wells
71.20.Nr

Semiconductor compounds
81.07.St

Quantum wells
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea

III-V semiconductors
78.40.Fy

Semiconductors

International Patent Classification (IPC)

B82B1/00
Nano-structures
H01S3/091
Using optical pumping

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3681944

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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