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Appl. Phys. Lett. 100, 061112 (2012); http://dx.doi.org/10.1063/1.3682501 (4 pages)

Highly tunable whispering gallery mode semiconductor lasers with controlled absorber

A. N. Baranov1, G. Boissier1, R. Teissier1, A. M. Monakhov2, V. V. Sherstnev2, M. I. Larchenkov2, and Yu. P. Yakovlev2

1Institut d’Electronique du Sud (IES), Université Montpellier 2, CNRS, IES (UMR CNRS 5214), 34095 Montpellier, France
2Ioffe Physico-Technical Institute, St. Petersburg, Russia

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(Received 9 November 2011; accepted 12 January 2012; published online 7 February 2012)

Tunable semiconductor lasers with controlled absorber based on GaInAsSb/GaAlAsSb quantum well heterostructure was fabricated and experimentally studied. The emission wavelength of these lasers shifts from 2.24 to 2.28 μm when the bias on the control contact decreases from the voltage equal to that on the main electrode to 0 V when the control contact is grounded. The principle of operation of such a device is given.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.Fc

    Modulation, tuning, and mode locking

  • 42.60.By

    Design of specific laser systems

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

International Patent Classification (IPC)

  • H01S3/098

    Mode locking; Mode suppression

  • H01S3/10

    Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating

  • H01S5/00

    Semiconductor lasers

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    S. Suchalkin, M. V. Kisin, S. Luryi, G. Belenky, F. J. Towner, J. D. Bruno, C. Monroy, and R. L. Tober, Appl. Phys. Lett. 88, 031103 (2006)APPLAB000088000003031103000001.

    A. Bismuto, R. Terazzi, M. Beck, and J. Faist, Appl. Phys. Lett. 96, 141105 (2010)APPLAB000096000014141105000001.

    N. A. Pikhtin, A. Yu. Leshko, A. V. Lyutetski, V. B. Khalfin, N. V. Shuvalova, Yu. V. Ilin, and I. S. Tarasov, Tech. Phys. Lett. 23, 214 (1997)TPLEED000023000003000214000001.


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