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Applied Physics Letters / Volume 100 / Issue 6 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 061113 (2012); http://dx.doi.org/10.1063/1.3685466 (3 pages)

Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes

Kyu Sang Kim1, Myoung Gyun Suh2, and S. N. Cho3

1Department of Applied Physics & Electronics, Sangji University, Wonju, Gangwon-Do 220-702, Korea
2Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA
3Micro Devices Group, Micro Systems Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-712, Korea

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(Received 13 October 2011; accepted 24 January 2012; published online 9 February 2012)

The Ni-dot/Ag/Pt layer, where Ni-dot layer is formed of nanometer sized Ni dots, has been used to improve the reflectivity from the surface of p-type GaN in a light emitting diode (LED). Comparing with Ni/Ag/Pt layer, where Ni layer is a thin film, the Ni-dot/Ag/Pt structure shows significantly improved reflectivity with stable contact resistivity. The optical output power and external quantum efficiency of InGaN LEDs with Ni-dot/Ag/Pt structure for p-metal have improved by 28% and 29%, respectively, over the results of Ni/Ag/Pt structure.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

contact resistance, electrical resistivity, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, nanostructured materials, nickel, platinum, reflectivity, semiconductor-metal boundaries, silver, wide band gap semiconductors

PACS

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • H01L27/15

    Including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

  • H01L33/00

    Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

  • H01R

    Electrically-conductive connections; Structural associations of a plurality of mutually-insulated electrical connecting elements; Coupling devices; Current collectors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3685466

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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