APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 100 / Issue 6 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 061114 (2012); http://dx.doi.org/10.1063/1.3683498 (4 pages)

Room temperature single photon emission from an epitaxially grown quantum dot

O. Fedorych1, C. Kruse2, A. Ruban1, D. Hommel2, G. Bacher1, and T. Kümmell1

1Werkstoffe der Elektrotechnik and CeNIDE, Universität Duisburg‐Essen, Bismarckstr. 81, 47057 Duisburg, Germany
2Institut für Festkörperphysik, Halbleiterepitaxie, Universität Bremen, Otto‐Hahn‐Allee, 28359 Bremen, Germany

View MapView Map

(Received 15 November 2011; accepted 19 January 2012; published online 9 February 2012)

Single photon emission from an epitaxially grown quantum dot at room temperature is presented. CdSe/ZnSSe quantum dots are embedded into MgS barriers, providing dominant radiative recombination up to 300 K. Under continuous wave optical excitation, the autocorrelation function g(2)(t) exhibits a sharp dip at (t = 0) with g(2)(0) = 0.16 ± 0.15 at T = 300 K, revealing excellent suppression of multiphoton emission even at room temperature.

© 2012 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

cadmium compounds, electron-hole recombination, epitaxial growth, II-VI semiconductors, multiphoton processes, photoexcitation, semiconductor growth, semiconductor quantum dots, wide band gap semiconductors, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3683498

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    F. Pisanello, L. Martiradonna, G. Leménager, P. Spinicelli, A. Fiore, L. Manna, J.-P. Hermier, R. Cingolani, E. Giacobino, M. De Vittorio, and A. Bramati, Appl. Phys. Lett. 96, 033101 (2010)APPLAB000096000003033101000001.

    T. Heindel, C. Schneider, M. Lermer, S. H. Kwon, T. Braun, S. Reitzenstein, S. Höfling, M. Kamp, and A. Forchel, Appl. Phys. Lett. 96, 011107 (2010)APPLAB000096000001011107000001.

    R. Arians, T. Kümmell, G. Bacher, A. Gust, C. Kruse, and D. Hommel, Appl. Phys. Lett. 90, 101114 (2007)APPLAB000090000010101114000001.

    R. Arians, A. Gust, T. Kümmell, C. Kruse, S. Zaitsev, G. Bacher, and D. Hommel, Appl. Phys. Lett. 93, 173506 (2008)APPLAB000093000017173506000001.

    T. Kümmell, S. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, Phys. Rev. B 81, 241306(R) (2010).

    K. Sebald, P. Michler, T. Passow, D. Hommel, G. Bacher, and A. Forchel, Appl. Phys. Lett. 81, 2920 (2002)APPLAB000081000016002920000001.

    L. Besombes, K. Kheng, L. Marsal, and H. Mariette, Phys. Rev. B 63, 155307 (2001).

    W. Shan, J. Song, H. Luo, and J. K. Furdyna, Phys. Rev. B 50, 8012 (1994).

    J. Seufert, M. Rambach, G. Bacher, A. Forchel, Th. Passow, and D. Hommel, Appl. Phys. Lett. 82, 3946 (2003)APPLAB000082000022003946000001.

    D. Niles and H. Hochst, Phys. Rev. B 43, 1492 (1991).

    T. Passow, H. Heinke, T. Schmidt, J. Falta, A. Stockmann, H. Selke, P. L. Ryder, K. Leonardi, and D. Hommel, Phys. Rev. B 64, 193311 (2001).

    H. Lohmeyer, J. Kalden, K. Sebald, C. Kruse, D. Hommel, and J. Gutowski, Appl. Phys. Lett. 92, 011116 (2008)APPLAB000092000001011116000001.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Room temperature single photon emission from an epitaxially grown quantum dot
  2. Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes
  3. Highly tunable whispering gallery mode semiconductor lasers with controlled absorber
  4. Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
  5. X-ray spatial frequency heterodyne imaging
Go to AIP Home
Copyright © American Institute of Physics
close