APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 100 / Issue 6 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 061115 (2012); http://dx.doi.org/10.1063/1.3683521 (3 pages)

Single photon emission from InGaN/GaN quantum dots up to 50 K

Stefan Kremling1, Christian Tessarek2, Heiko Dartsch2, Stephan Figge2, Sven Höfling1, Lukas Worschech1, Carsten Kruse2, Detlef Hommel2, and Alfred Forchel1

1Technische Physik, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, Bavaria, D-97074 Würzburg, Germany
2Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, D-28334 Bremen, Germany

View MapView Map

(Received 15 October 2011; accepted 20 January 2012; published online 9 February 2012)

We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (μPL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50 K is demonstrated.

© 2012 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS, PACS, and IPC

Keywords

excitons, gallium compounds, III-V semiconductors, indium compounds, MOCVD, photoluminescence, semiconductor epitaxial layers, semiconductor growth, semiconductor quantum dots, vapour phase epitaxial growth, wide band gap semiconductors

PACS

International Patent Classification (IPC)

  • C30B25/02

    Epitaxial-layer growth

  • C30B25/00

    Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

  • C30B23/02

    Epitaxial-layer growth

  • C23C16/18

    From metallo-organic compounds

  • C09K11/00

    Luminescent, e.g. electroluminescent, chemiluminescent, materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3683521

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Bommer, W. M. Schulz, R. Roßbach, M. Jetter, P. Michler, T. Thomay, A. Leitenstorfer, and R. Bratschitsch, J. Appl. Phys. 110, 063108 (2011)JAPIAU000110000006063108000001.

    K. Sebald, P. Michler, T. Passow, D. Hommel, G. Bacher, and A. Forchel, Appl. Phys. Lett. 81, 2920 (2002)APPLAB000081000016002920000001.

    R. P. Mirin, Appl. Phys. Lett. 84, 1260 (2004)APPLAB000084000008001260000001.

    O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, and Y. Arakawa, Appl. Phys. Lett. 76, 2361 (2000)APPLAB000076000017002361000001.

    R. A. Oliver, G. A. D. Briggs, M. J. Kappers, C. J. Humphreys, S. Yasin, J. H. Rise, J. D. Smith, and R. A. Taylor, Appl. Phys. Lett. 83, 755 (2003)APPLAB000083000004000755000001.

    M. Winkelnkemper, R. Seguin, S. Rodt, A. Schliwa, L. Reißmann, A. Strittmatter, A. Hoffmann, and D. Bimberg, J. Appl. Phys. 101, 113708 (2007)JAPIAU000101000011113708000001.

    I. A. Ostapenko, G. Hönig, C. Kindel, S. Rodt, A. Strittmatter, A. Hoffmann, and D. Bimberg, Appl. Phys. Lett. 97, 063103 (2010)APPLAB000097000006063103000001.

    A. F. Jarjour, R. A. Taylor, R. A. Oliver, M. J. Kappers, C. J. Humphreys, and A. Tahraoui, Appl. Phys. Lett. 91, 052101 (2007)APPLAB000091000005052101000001.

    R. Bardoux, T. Guillet, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, Phys. Rev. B 77, 235315 (2008).


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Single photon emission from InGaN/GaN quantum dots up to 50 K
  2. Room temperature single photon emission from an epitaxially grown quantum dot
  3. Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes
  4. Highly tunable whispering gallery mode semiconductor lasers with controlled absorber
  5. Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
Go to AIP Home
Copyright © American Institute of Physics
close