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Applied Physics Letters / Volume 100 / Issue 6 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 061120 (2012); http://dx.doi.org/10.1063/1.3684505 (4 pages)

InGaN light‐emitting diodes with indium‐tin‐oxide sub‐micron lenses patterned by nanosphere lithography

Q. Zhang, K. H. Li, and H. W. Choi

Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong

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(Received 21 December 2011; accepted 23 January 2012; published online 9 February 2012)

Close‐packed micro‐lenses with dimensions of the order of wavelength have been integrated onto the indium‐tin‐oxide (ITO) layer of GaN light‐emitting diodes employing nanosphere lithography. The ITO lens arrays are transferred from a self‐assembled silica nanosphere array by dry etching, leaving the semiconductor layer damage‐free. An enhancement of up to 63.5% on optical output power from the lensed light‐emitting diode (LED) has been observed. Lens‐patterned LEDs are also found to exhibit reduced emission divergence. Three‐dimensional finite‐difference time‐domain simulations performed for light extraction and emission characteristics are found to be consistent with the observed results.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

etching, finite difference time-domain analysis, III-V semiconductors, indium compounds, lenses, light emitting diodes, nanopatterning, self-assembly

PACS

International Patent Classification (IPC)

  • B82B3/00

    Manufacture or treatment of nano-structures

  • G02B3/00

    Simple or compound lenses

  • H01L21/02

    Manufacture or treatment of semiconductor devices or of parts thereof

  • H01L21/70

    Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof

  • H01L27/15

    Including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

  • H01L33/00

    Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3684505

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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