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Applied Physics Letters / Volume 100 / Issue 6 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 061121 (2012); http://dx.doi.org/10.1063/1.3682523 (4 pages)

Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics

S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, and H. X. Jiang

Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA

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(Received 16 December 2011; accepted 19 January 2012; published online 9 February 2012)

Recent advances in epitaxial growth and demonstration of p-type conductivity in hexagonal boron nitride (hBN) epilayers represent an exceptional opportunity to revolutionize p-layer approach and overcome the intrinsic problem of low p-type conductivity in Al-rich AlGaN for deep ultraviolet (DUV) device applications. Nevertheless, the ability of epitaxial growth of hBN on AlGaN is a prerequisite for the incorporation of p-type hBN in AlGaN DUV device structures. We report on the epi-growth of hBN on Al-rich AlGaN/AlN/Al2O3 templates using metal organic chemical vapor deposition. X-ray diffraction measurement revealed a 2θ peak at 26.5° which indicates that the BN epilayers are hexagonal and consist of a single phase. Mg doped hBN epilayers were also grown on highly insulating AlN and n-type AlGaN templates with an attempt to demonstrate hBN/AlGaN p-n junctions. Mg doped hBN epilayers grown on insulating templates were p-type with an in-plane resistivity of ∼2.3 Ω cm. Diode behavior in the p-n structures of p-hBN/n-AlxGa1−xN (x ∼ 0.62) has been demonstrated. The results here reveal the feasibility of using highly conductive p-type hBN as an electron blocking and p-contact layers for AlGaN deep UV emitters.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

aluminium compounds, boron compounds, gallium compounds, III-V semiconductors, MOCVD, p-n junctions, semiconductor epitaxial layers, vapour phase epitaxial growth, X-ray diffraction

PACS

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 68.55.ag

    Semiconductors

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

International Patent Classification (IPC)

  • C23C16/18

    From metallo-organic compounds

  • C30B23/02

    Epitaxial-layer growth

  • C30B25/00

    Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

  • C30B25/02

    Epitaxial-layer growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3682523

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    D. Pacilé, J. C. Meyer, Ç. Ö. Girit, and A. Zettl, Appl. Phys. Lett. 92, 133107 (2008)APPLAB000092000013133107000001.

    N. Alem, R. Erni, C. Kisielowski, M. D. Rossell, W. Gannett, and A. Zettl, Phys. Rev. B 80, 155425 (2009).

    M. L. Nakarmi, K. H. Kim, M. Khizar, Z. Y. Fan, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 86, 092108 (2005)APPLAB000086000009092108000001.

    R. Dahal, J. Li, S. Majety, B. N. Pantha, X. K. Cao, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 98, 211110 (2011)APPLAB000098000021211110000001.

    M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 85, 3769 (2004)APPLAB000085000017003769000001.

    K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 86, 222108 (2005)APPLAB000086000022222108000001.


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