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Appl. Phys. Lett. 100, 063502 (2012); http://dx.doi.org/10.1063/1.3683517 (4 pages)

Deformable transparent all-carbon-nanotube transistors

Shinya Aikawa1,2, Erik Einarsson1,3, Theerapol Thurakitseree1, Shohei Chiashi1, Eiichi Nishikawa2, and Shigeo Maruyama1

1Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2Department of Electrical Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
3Global Center of Excellence for Mechanical Systems Innovation, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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(Received 11 October 2011; accepted 11 January 2012; published online 7 February 2012)

We fabricated polymer-laminated, transparent, all-carbon-nanotube field-effect transistors (CNT-FETs), making use of the flexible yet robust nature of single-walled carbon nanotubes (SWNTs). All components of the FET (active channel, electrodes, dielectric layer, and substrate) consist of carbon-based materials. The use of a plastic substrate that is considerably thinner than those used in other flexible CNT-FETs allowed our devices to be highly deformable without degradation of electrical properties. Using this approach, flexible, transparent CNT-FET devices able to withstand a 1 mm bending radius were realized.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

PACS

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • H01L29/00

    Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

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PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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