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6 Feb 2012

Volume 100, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 100, 061101 (2012); http://dx.doi.org/10.1063/1.3665180 (3 pages)

I. E. Khodasevych, C. M. Shah, S. Sriram, M. Bhaskaran, W. Withayachumnankul, B. S. Y. Ung, H. Lin, W. S. T. Rowe, D. Abbott, and A. Mitchell
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Phase field simulations of stress controlling the vortex domain structures in ferroelectric nanosheets

W. J. Chen, Yue Zheng, and Biao Wang

Appl. Phys. Lett. 100, 062901 (2012); http://dx.doi.org/10.1063/1.3681379 (4 pages) | Cited 7 times

Online Publication Date: 8 February 2012

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Effect of stress loads on the vortex domain structures (VDSs) in ferroelectric nanosheet has been investigated. Results of phase field simulations show that the different vortex domain structures can form in free-standing nanosheet from random perturbations. Applying stress loads on nanosheet, it is found that the domain morphology, especially the size and number of vortices, can be regularly controlled. These results indicate promising controlling the vortex domain structures in ferroelectric nanostructures by the mechanical loads.
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77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
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Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films

Jieun Bae, Inrok Hwang, Yuhyun Jeong, Sung-Oong Kang, Sahwan Hong, Jongwan Son, Jinsik Choi, Jinsoo Kim, June Park, Maeng-Je Seong, Quanxi Jia, and Bae Ho Park

Appl. Phys. Lett. 100, 062902 (2012); http://dx.doi.org/10.1063/1.3685485 (4 pages) | Cited 3 times

Online Publication Date: 8 February 2012

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Both bi-stable memory and mono-stable threshold switching are observed in amorphous NbOx films. In addition, the transition between memory and threshold switching can be induced by changing external electrical stress. Raman spectroscopy and transmission electron microscope data show that the NbOx film is self-assembled into a layered structure consisting of a top metal-rich region and a bottom oxygen-rich region. The volume ratio of the two regions depends on the film thickness. Our experimental results suggest that different characteristics of conducting filaments in the two regions result in thickness dependence of switching types and the transition between memory and threshold switching.
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78.30.Hv Other nonmetallic inorganics
68.55.-a Thin film structure and morphology

Ionic-liquid-induced ferroelectric polarization in poly(vinylidene fluoride) thin films

Feipeng Wang, Alexander Lack, Zailai Xie, Peter Frübing, Andreas Taubert, and Reimund Gerhard

Appl. Phys. Lett. 100, 062903 (2012); http://dx.doi.org/10.1063/1.3683526 (4 pages) | Cited 3 times

Online Publication Date: 8 February 2012

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Thin films of ferroelectric β-phase poly(vinylidene fluoride) (PVDF) were spin-coated from a solution that contained small amounts of the ionic liquid (IL) 1-ethyl-3-methylimidazolium nitrate. A remanent polarization of 60 mC/m2 and a quasi-static pyroelectric coefficient of 19 μC/m2K at 30 °C were observed in the films. It is suggested that the IL promotes the formation of the β phase through dipolar interactions between PVDF chain-molecules and the IL. The dipolar interactions are identified as Coulomb attraction between hydrogen atoms in PVDF chains and anions in IL. The strong crystallinity increase is probably caused by the same dipolar interaction as well.
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77.22.Ej Polarization and depolarization
77.84.Jd Polymers; organic compounds
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.70.+a Pyroelectric and electrocaloric effects
68.55.am Polymers and organics

Dynamic hysteresis of tetragonal ferroelectrics: The resonance of 90°-domain switching

D. P. Chen and J.-M. Liu

Appl. Phys. Lett. 100, 062904 (2012); http://dx.doi.org/10.1063/1.3683549 (5 pages) | Cited 2 times

Online Publication Date: 8 February 2012

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The dynamic hysteresis of ferroelectric lattice with 90°-domain structure in response to time-varying electric field of frequency ω and amplitude E0 is investigated using Monte Carlo simulation based on the Ginzburg-Landau phenomenological theory. A resonance mode of the polarization switching at low frequency range, associated with cluster dipole switching, beside the dipole switching resonance mode, is revealed, characterized by two separate peaks in the hysteresis area spectrum A(ω). It is indicated that the power law scaling behaviors A(ω) ∼ ωα for ω → 0 and A(ω) ∼ ω−β for ω → ∞ remain applicable.
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77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.65.Fs Electromechanical resonance; quartz resonators
77.22.Ej Polarization and depolarization

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

C. Mahata, S. Mallik, T. Das, C. K. Maiti, G. K. Dalapati, C. C. Tan, C. K. Chia, H. Gao, M. K. Kumar, S. Y. Chiam, H. R. Tan, H. L. Seng, D. Z. Chi, and E. Miranda

Appl. Phys. Lett. 100, 062905 (2012); http://dx.doi.org/10.1063/1.3684803 (4 pages) | Cited 1 time

Online Publication Date: 9 February 2012

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Atomic layer deposited (ALD) (TiO2)x(Al2O3)1-x(TiAlO) alloy gate dielectrics on In0.47Ga0.53As/InP substrates are shown to produce high quality interfaces between TiAlO and InGaAs. The surface morphology and interfacial reaction of nanolaminate ALD TiAlO on In0.53Ga0.47As are studied using atomic force microscopy and x-ray photoelectron spectroscopy. Measured valence and conduction band offsets are found to be 2.85 ± 0.05 and 1.25 ± 0.05 eV, respectively. Capacitance-voltage characteristics show low frequency dispersion (∼11%), interface state density (∼4.2 × 1011 cm−2eV−1), and hysteresis voltage (∼90 mV). Ga-O and As-O bonding are found to get suppressed in the gate stacks after post deposition annealing. Our experimental results suggest that higher oxidation states of In and Ga at the In0.53Ga0.47As surface and As diffusion in the dielectric are effectively controlled by Ti incorporation in Al2O3.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
79.60.Jv Interfaces; heterostructures; nanostructures
73.20.At Surface states, band structure, electron density of states
77.80.Dj Domain structure; hysteresis

Nonlinearity in the high-electric-field piezoelectricity of epitaxial BiFeO3 on SrTiO3

Pice Chen, Rebecca J. Sichel-Tissot, Ji Young Jo, Ryan T. Smith, Seung-Hyub Baek, Wittawat Saenrang, Chang-Beom Eom, Osami Sakata, Eric M. Dufresne, and Paul G. Evans

Appl. Phys. Lett. 100, 062906 (2012); http://dx.doi.org/10.1063/1.3683533 (4 pages) | Cited 2 times

Online Publication Date: 10 February 2012

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The piezoelectricity of a multiferroic BiFeO3 thin film deviates from its low-field linear response in electric fields higher than 150 MV/m. Time-resolved synchrotron x-ray microdiffraction reveals a low-field piezoelectric coefficient of 55 pm/V and a steeper increase in strain at higher fields, with an effective piezoelectric coefficient of 86 pm/V. The strain reaches 2% at 281 MV/m, a factor of 1.3 higher than expected based on an extrapolation from low fields. The peak intensity of the BiFeO3 (002) Bragg reflection decreases throughout the high-electric-field regime, accompanied by increased diffuse scattering, consistent with lattice softening lattice near a field-induced phase transition.
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77.55.H- Piezoelectric and electrostrictive films
77.55.Nv Multiferroic/magnetoelectric films
77.65.Ly Strain-induced piezoelectric fields
78.47.D- Time resolved spectroscopy (>1 psec)
75.85.+t Magnetoelectric effects, multiferroics
64.70.K- Solid-solid transitions

Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices

Lior Kornblum, Boris Meyler, Catherine Cytermann, Svetlana Yofis, Joseph Salzman, and Moshe Eizenberg

Appl. Phys. Lett. 100, 062907 (2012); http://dx.doi.org/10.1063/1.3684939 (3 pages) | Cited 4 times

Online Publication Date: 10 February 2012

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Ultrathin dielectric capping layers are a prominent route for threshold voltage control in advanced Si devices. In this work the position of an Al2O3 layer inside a HfO2-based stack is systematically varied and investigated following a low and a high temperature anneal. Electrical results are compared with a sub-nanometer resolution materials characterization, showing a diffusion of Al to the bottom HfO2 interface. A correlation is found between the presence of Al at the bottom interface and a flatband voltage increase. Based on these findings, we propose to use the position of the Al2O3 for fine-tuning the threshold voltage.
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85.30.Tv Field effect devices
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