APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

6 Feb 2012

Volume 100, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 061101 (2012); http://dx.doi.org/10.1063/1.3665180 (3 pages)

I. E. Khodasevych, C. M. Shah, S. Sriram, M. Bhaskaran, W. Withayachumnankul, B. S. Y. Ung, H. Lin, W. S. T. Rowe, D. Abbott, and A. Mitchell
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds
FREE

Four-mode plasmonic structure based on a prism-grating anticrossing bandgap

R. Chuliá-Jordán and D. Santamaría-Pérez

Appl. Phys. Lett. 100, 063301 (2012); http://dx.doi.org/10.1063/1.3682081 (4 pages) | Cited 1 time

Online Publication Date: 7 February 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have developed a plasmonic structure based on an anticrossing bandgap prism-grating coupling technique. We observe that up to four surface plasmons can be excited simultaneously in this plasmonic structure. Initial experiments confirm that such a plasmonic structure can improve sensor performance by tuning the amplitude of the grating. From numerical simulations, we conclude that plasmon modes with equal propagation constants at a different wavelength can only be excited at different grating amplitudes of our plasmonic structure, in such a way that the increase of wavelength implies the increase of the amplitude for a fixed propagation constant.
Show PACS
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.Bh Lenses, prisms and mirrors
42.79.Dj Gratings
FREE

Mixed self-assembled monolayer of molecules with dipolar and acceptor character—Influence on hysteresis and threshold voltage in organic thin-film transistors

Abdesselam Jedaa, Michael Salinas, Christof M. Jäger, Timothy Clark, Alexander Ebel, Andreas Hirsch, and Marcus Halik

Appl. Phys. Lett. 100, 063302 (2012); http://dx.doi.org/10.1063/1.3682301 (4 pages) | Cited 3 times

Online Publication Date: 7 February 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this report, we investigate the impact of the molecular dipole moment and redox active head groups (C60) in pure and mixed self-assembled monolayers (SAMs), which serve as an ultra-thin hybrid dielectric layer in low-voltage operating organic thin-film transistors. We show that the dipole of the SAM-forming molecules affects the threshold voltage, while the concentration of redox-active C60 moieties determines the hysteresis in devices with α,α′-dihexyl-sexithiophene and pentacene as organic semiconductors.
Show PACS
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
85.30.Tv Field effect devices
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
FREE

Fullerene acceptor for improving open-circuit voltage in inverted organic photovoltaic devices without accompanying decrease in short-circuit current density

Yutaka Matsuo, Junichi Hatano, Takayuki Kuwabara, and Kohshin Takahashi

Appl. Phys. Lett. 100, 063303 (2012); http://dx.doi.org/10.1063/1.3683469 (3 pages) | Cited 6 times

Online Publication Date: 8 February 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A poly(3-hexylthiophene) (P3HT)-based inverted organic photovoltaic (OPV) device with a fullerene electron acceptor, (dimethyl(o-anisyl)silylmethyl)(dimethylphenylsilylmethyl)[60]fullerene (SIMEF2), exhibited 2.9% power conversion efficiency (PCE; JSC = 7.9 mA/cm2, VOC = 0.66 V, and FF = 0.56) in the device configuration, indium tin oxide/ZnO/P3HT:SIMEF2/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/Au under AM1.5 G illumination at 100 mW/cm2. Through a comparison with a [6,6]-phenyl-C61-butyric acid methyl ester-based device (PCE = 2.4%, JSC = 7.8 mA/cm2, VOC = 0.56 V, and FF = 0.55), SIMEF2 was found to give higher VOC without a decrease in JSC. This result marks progress toward overcoming the trade-off relationship between VOC and JSC in the development of highly efficient OPV devices.
Show PACS
85.60.Bt Optoelectronic device characterization, design, and modeling
85.65.+h Molecular electronic devices
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
FREE

Efficient hybrid white polymer light-emitting devices with electroluminescence covered the entire visible range and reduced efficiency roll-off

Sujun Hu, Minrong Zhu, Qinghua Zou, Hongbin Wu, Chuluo Yang, Wai-Yeung Wong, Wei Yang, Junbiao Peng, and Yong Cao

Appl. Phys. Lett. 100, 063304 (2012); http://dx.doi.org/10.1063/1.3682526 (4 pages) | Cited 2 times

Online Publication Date: 8 February 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report efficient hybrid white polymer light emitting devices (WPLEDs) fabricated via simple solution-proceeded process from a newly synthesized wide band-gap fluorene-co-dibenzothiophene-S,S-dioxide copolymer, which dually function as fluorescent blue emitter and host material for electrophosphorescent sky-blue, yellow, and saturated-red dyes. The Commission Internationale d’Énclairage coordinates of the best devices are (0.356, 0.334), with electroluminescence covered the entire visible light spectrum from 400 to 780 nm, resulting in a high color rendering index of 90. Incorporation of a bilayer electrode consisting of water/alcohol-soluble conjugated polymer and Al as electron-injection cathode boosts an enhancement of 50% in device efficiency, leading to external quantum efficiency of 12.6%, and peak power efficiency of 21.4 l m W−1 as measured in an integrating sphere. Both the efficiency and the color quality of the obtained device are ranking among one of the highest values for WPLEDs reported to date. Furthermore, as compared with those all-phosphorescent WPLEDs, the hybrid WPLEDs studied here exhibit a significantly reduced efficiency roll-off due to the very low doping concentration.
Show PACS
85.60.Jb Light-emitting devices
FREE

Bloch surface waves-controlled fluorescence emission: Coupling into nanometer-sized polymeric waveguides

Mirko Ballarini, Francesca Frascella, Emanuele Enrico, Pietro Mandracci, Natascia De Leo, Francesco Michelotti, Fabrizio Giorgis, and Emiliano Descrovi

Appl. Phys. Lett. 100, 063305 (2012); http://dx.doi.org/10.1063/1.3684272 (4 pages) | Cited 5 times

Online Publication Date: 10 February 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The lateral confinement of Bloch surface waves on a patterned multilayer is investigated by means of leakage radiation microscopy (LRM). Arrays of nanometric polymeric waveguides are fabricated on a proper silicon-nitride/silicon-oxide multilayer grown on a standard glass coverslip. By exploiting the functional properties of the polymer, fluorescent proteins are grafted onto the waveguides. A fluorescence LRM analysis of both the direct and the Fourier image plane reveals that a substantial amount of emitted radiation couples into a guided mode and then propagates into the nanometric waveguide. The observations of the mode are supported by numerical simulations.
Show PACS
42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers
42.30.Kq Fourier optics
42.79.-e Optical elements, devices, and systems
FREE

Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors

Chang Bum Park

Appl. Phys. Lett. 100, 063306 (2012); http://dx.doi.org/10.1063/1.3680248 (3 pages)

Online Publication Date: 10 February 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The phenomenon of device instability governed by electron trapping was investigated in pentacene field-effect transistors. We found that the threshold voltage shift (ΔVT) increases significantly when the device is exposed to photo-irradiation with the depletion gate bias. This effect reveals that a number of electron trapping sites are located in the pentacene band gap, presenting the mechanism of the photo-induced ΔVT. In addition, we found the specific shift of bias-stressed ΔVT under a monochromatic of 690-500 nm, which reflects that the electron trap states would be distributed between the energy levels of 1.8 and 2.5 eV in the gap state.
Show PACS
85.30.Tv Field effect devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close