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6 Feb 2012

Volume 100, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 100, 061101 (2012); http://dx.doi.org/10.1063/1.3665180 (3 pages)

I. E. Khodasevych, C. M. Shah, S. Sriram, M. Bhaskaran, W. Withayachumnankul, B. S. Y. Ung, H. Lin, W. S. T. Rowe, D. Abbott, and A. Mitchell
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Anomaly of film porosity dependence on deposition rate

Stephen P. Stagon, Hanchen Huang, J. Kevin Baldwin, and Amit Misra

Appl. Phys. Lett. 100, 061601 (2012); http://dx.doi.org/10.1063/1.3683542 (3 pages) | Cited 3 times

Online Publication Date: 9 February 2012

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This letter reports an anomaly of film porosity dependence on deposition rate during physical vapor deposition – the porosity increases as deposition rate decreases. Using glancing angle deposition of Cu on SiO2 substrate, the authors show that the Cu film consists of well separated nanorods when the deposition rate is 1 nm/s, and that the Cu films consists of a more uniform film when the deposition rate is 6 nm/s; all other deposition conditions remain the same. This anomaly is the result of interplay among substrate non-wetting, density of Cu nuclei on the substrate, and the minimum diameter of nanorods.
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68.55.at Other materials
61.43.Gt Powders, porous materials
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Dj E-beam and hot filament evaporation deposition

Spontaneous formation of quantum height manganese gallium islands and atomic chains on N-polar gallium nitride(000math)

Abhijit Chinchore, Kangkang Wang, Meng Shi, Yinghao Liu, and Arthur R. Smith

Appl. Phys. Lett. 100, 061602 (2012); http://dx.doi.org/10.1063/1.3682487 (4 pages)

Online Publication Date: 9 February 2012

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Deposition of manganese onto the gallium-rich, nitrogen-polar GaN(000math) surface results in the formation of quantum-height island structures. Two unique island heights differing by one atomic layer are observed, including 0.93 nm high islands which are unstable against the formation of 1.13 nm high islands. A row structure at the islands’ surface suggests a mixture of Mn and Ga, while growth of one-dimensional atomic chains at the surface of the stable 1.13 nm high islands indicates a strongly anisotropic diffusion. The observed behavior is consistent with a quantum size effect driven growth mechanism.
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68.55.J- Morphology of films
66.30.Fq Self-diffusion in metals, semimetals, and alloys
68.55.at Other materials
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