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Applied Physics Letters / Volume 100 / Issue 7 / DEVICE PHYSICS

Appl. Phys. Lett. 100, 073501 (2012); http://dx.doi.org/10.1063/1.3682479 (3 pages)

Drawing graphene nanoribbons on SiC by ion implantation

S. Tongay1,2, M. Lemaitre1, J. Fridmann3, A. F. Hebard2, B. P. Gila1, and B. R. Appleton1

1Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
2Department of Physics, University of Florida, Gainesville, Florida 32611, USA
3Raith USA, Inc., Ronkonkoma, New York 11779, USA

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(Received 27 September 2011; accepted 28 November 2011; published online 13 February 2012)

We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 °C below the graphitization temperature (TG) of SiC. We find that ion implantation of SiC lowers the TG, allowing selective graphene growth at temperatures below the TG of pristine SiC and above TG of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

annealing, graphene, graphitisation, ion implantation, nanofabrication, nanopatterning, nanoribbons

PACS

International Patent Classification (IPC)

  • B82B3/00

    Manufacture or treatment of nano-structures

  • C21D1/26

    Methods of annealing

  • H01J37/317

    For changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3682479

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    S. Tongay, M. Lemaitre, T. Schumann, K. Berke, B. R. Appleton, B. Gila, and A. F. Hebard, Appl. Phys. Lett. 99, 102102 (2011)APPLAB000099000010102102000001.

    N. Camara, G. Rius, J.-R. Huntzinger, A. Tiberj, N. Mestres, P. Godignon, and J. Camassel, Appl. Phys. Lett. 93(12), 123503 (2008)APPLAB000093000012123503000001.

    M. Rubio-Roy, F. Zaman, Y. Hu, C. Berger, M. W. Moseley, J. D. Meindl, and W. A. de Heer, Appl. Phys. Lett. 96(8), 082112 (2010)APPLAB000096000008082112000001.


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Figures (3)

Figures (click on thumbnails to view enlargements)

FIG.1
(Color online) (a) Raman spectra measured on pristine 6H- (blue dashed), Au implanted (1 × 1017 Au ions/cm2) 6H- (blue line), pristine 6H- (red dashed) and Si implanted (5 × 1017 Si ions/cm2) 6H-SiC (red line) after annealing to 1200 °C at 1 × 10−6 Torr pressure. (b) Raman spectra of Au implanted (blue) and Si implanted 6H-SiC (red) after subtracting the pristine SiC background. (c) The D peak Raman shift and D to G peak ratio measured using lasers at different wavelengths.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(Color online) (a) Auger electron spectra taken from 50 to 2200 eV on pristine 6H-SiC (blue) and Au implanted 6H-SiC (red) after annealing to 1200 °C. (b) Detailed Auger carbon peaks measured on pristine (blue), Au implanted (red) 6H-SiC after annealing to 1200 °C, HOPG (black), and CVD graphene on copper foil (green).

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
SEM images taken on (a) Au implanted 4H-SiC, (b) Si implanted 6H-SiC, and (c) graphene nanoribbon surfaces. (d) TEM images taken across the Au/graphene/6H-SiC.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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