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13 Feb 2012

Volume 100, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 073501 (2012); http://dx.doi.org/10.1063/1.3682479 (3 pages)

S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, and B. R. Appleton
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Drawing graphene nanoribbons on SiC by ion implantation

S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, and B. R. Appleton

Appl. Phys. Lett. 100, 073501 (2012); http://dx.doi.org/10.1063/1.3682479 (3 pages) | Cited 6 times

Online Publication Date: 13 February 2012

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We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 °C below the graphitization temperature (TG) of SiC. We find that ion implantation of SiC lowers the TG, allowing selective graphene growth at temperatures below the TG of pristine SiC and above TG of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.
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81.16.Rf Micro- and nanoscale pattern formation
81.40.Gh Other heat and thermomechanical treatments
61.72.up Other materials
61.48.Gh Structure of graphene

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

Katsumasa Kamiya, Moon Young Yang, Seong-Geon Park, Blanka Magyari-Köpe, Yoshio Nishi, Masaaki Niwa, and Kenji Shiraishi

Appl. Phys. Lett. 100, 073502 (2012); http://dx.doi.org/10.1063/1.3685222 (4 pages) | Cited 7 times

Online Publication Date: 13 February 2012

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We study the ON-OFF switching mechanism of oxide-based resistive–random–access–memories using theoretical calculations. Electron deficient vacancies (VO) up to 1+ charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted VO configurations with 2+ charges. The VO cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into VO. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.
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61.72.jd Vacancies

High efficiency planar Si/organic heterojunction hybrid solar cells

Lining He, Changyun Jiang, Hao Wang, Donny Lai, and Rusli

Appl. Phys. Lett. 100, 073503 (2012); http://dx.doi.org/10.1063/1.3684872 (3 pages) | Cited 8 times

Online Publication Date: 13 February 2012

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We present an efficient hybrid solar cell based on poly (3,4-ethylene-dioxythiophene):polystyrenesulfonate and planar Si with (100) and (111) orientations. The effect of Si surface native oxide on cell performance is studied. Compared to cell with hydrogen-terminated Si surface, the cell with oxygen-terminated Si surface reveals a 530-fold increase in power conversion efficiency (PCE) from 0.02% to 10.6%. The formation of SiOx-Si bonds poses a net positive surface dipole which leads to a favorable band alignment for charge separation. However, thicker oxide degrades cell performance due to higher series resistance. This study demonstrates the highest PCE reported to-date in this field.
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88.40.J- Types of solar cells
88.40.hj Efficiency and performance of solar cells

In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryosho Nakane, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, and Shinichi Takagi

Appl. Phys. Lett. 100, 073504 (2012); http://dx.doi.org/10.1063/1.3685505 (3 pages) | Cited 1 time

Online Publication Date: 14 February 2012

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We have demonstrated InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with self-aligned Co-InGaAs source/drain (S/D). The fabricated MOSEFETs exhibited excellent transistor operation and an on/off ratio of 104 without any S/D ion implantation. It was found that the Co-InGaAs alloys can be formed by direct reaction of Co and InGaAs during annealing at low temperature and that the unreacted Co is selectively etched from Co-InGaAs by an HCl solution without significant etching of Co-InGaAs. We also found that the Co-InGaAs alloys have low sheet resistance of less than 50 Ω/square and relatively low Schottky barrier height of 0.12 eV against electrons in InGaAs with high thermal stability.
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85.30.Tv Field effect devices

Chalcogenide glass surface passivation of a GaAs bipolar transistor for unique avalanche terahertz emitters and picosecond switches

Sergey Vainshtein, Valeri Javadyan, Guoyong Duan, Konstantin Tsendin, Rafael Hovhannisyan, and Juha Kostamovaara

Appl. Phys. Lett. 100, 073505 (2012); http://dx.doi.org/10.1063/1.3685693 (4 pages)

Online Publication Date: 14 February 2012

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The ultra-narrow “collapsing” field domains discovered recently in avalanching GaAs bipolar junction transistor provide a physical basis for designing unique THz emitters and superfast switches. Reliability in devices operating near their volume breakdown voltage requires decisive suppression of premature surface breakdown. We demonstrate here complete, durable surface breakdown suppression through simple deposition of a massive chalcogenide glass layer on the mesa surface by means of a negative charge formed at the interface.
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85.30.Pq Bipolar transistors

Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide

Piero Migliorato, Manju Seok, and Jin Jang

Appl. Phys. Lett. 100, 073506 (2012); http://dx.doi.org/10.1063/1.3685705 (4 pages) | Cited 7 times

Online Publication Date: 15 February 2012

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Accurate knowledge of the gap density of states (DOS) is of paramount importance for process control and modelling of thin-film transistors (TFTs). We present here an approach for flat band determination, based on the combined analysis of transfer and capacitance-voltage characteristics. The method is independent from the DOS knowledge and requires no fitting parameters. Applied here to the case of amorphous indium gallium zinc oxide TFTs, our approach yields key device parameters, helping identification of the physical mechanisms responsible for device to device variations and degradation phenomena. It appears in particular capable to differentiate between interface and bulk effects.
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85.30.Tv Field effect devices

Characteristics of polarization-doped N-face III-nitride light-emitting diodes

Kexiu Dong, Dunjun Chen, Bin Liu, Hai Lu, Peng Chen, Rong Zhang, and Youdou Zheng

Appl. Phys. Lett. 100, 073507 (2012); http://dx.doi.org/10.1063/1.3687181 (3 pages)

Online Publication Date: 16 February 2012

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The electrical and optical performances of N-face GaN-based light-emitting diodes (LEDs) with polarization-induced p-type doping are investigated theoretically. In comparison with the polarization-doped metal-face LED, the N-face one exhibits significant improvements in the hole injection efficiency and electroluminescence intensity when the applied forward voltage exceeds a certain value. Simultaneously, a reversed quantum confined Stark effect is observed in the polarization-doped N-face LED. The detailed physical mechanisms are explained in terms of the calculated energy band diagrams, carrier transport, and distribution of electric field containing polarization filed and free-carrier screening field.
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85.60.Jb Light-emitting devices

GaAs/GaInNAs quantum well and superlattice solar cell

Maykel Courel, Julio C. Rimada, and Luis Hernández

Appl. Phys. Lett. 100, 073508 (2012); http://dx.doi.org/10.1063/1.3687195 (4 pages) | Cited 1 time

Online Publication Date: 17 February 2012

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A theoretical study of GaAs/GaInNAs solar cells based on multiple-quantum well solar cells (MQWSCs) and superlattice solar cell (SLSC) configuration is presented. The conversion efficiency as a function of the quantum well width and depth is modeled for MQWSC, reaching high values. A study of the SLSC viability is also presented. The influence of the cluster width on the conversion efficiency is researched showing a better performance when width and the cluster number are increased. The SLSC conversion efficiency is compared with the maximum conversion efficiency obtained for the MQWSC showing that it is reached an amazing increment of 4%.
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88.40.J- Types of solar cells
88.40.hj Efficiency and performance of solar cells
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Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit

Hyun-June Jang and Won-Ju Cho

Appl. Phys. Lett. 100, 073701 (2012); http://dx.doi.org/10.1063/1.3685497 (4 pages) | Cited 3 times

Online Publication Date: 14 February 2012

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High-performance dual-gate (DG) ion-sensitive field-effect transistors (ISFETs) beyond the Nernstian limit of 59 mV/pH were realized using the fully depleted (FD) silicon-on-insulator (SOI) substrate. The FD SOI-based DG ISFET exhibited a significantly enhanced pH sensitivity of 379.2 mV/pH for DG operation amplified by capacitive coupling, while it exhibited a relatively poor sensitivity of 47.9 mV/pH for single-gate (SG) operation. Meanwhile, the non-ideal effects for long-term use slightly increased by the DG operation compared to the SG operation. Therefore, the FD SOI-based DG ISFETs compatible with the complementary metal-oxide-semiconductor process are considered to be very promising bio-chemical sensors.
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85.30.Tv Field effect devices

Temperature-modulated fluorescence tomography in a turbid media

Yuting Lin (林钰婷), Linden Bolisay, Michael Ghijsen, Tiffany C. Kwong, and Gultekin Gulsen

Appl. Phys. Lett. 100, 073702 (2012); http://dx.doi.org/10.1063/1.3681378 (4 pages) | Cited 4 times

Online Publication Date: 15 February 2012

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High scattering in biological tissues makes fluorescence tomography inverse problem very challenging in thick medium. We describe an approach termed “temperature-modulated fluorescence tomography” that can acquire fluorescence images at focused ultrasound resolution. By utilizing recently emerged temperature sensitive fluorescence contrast agents, this technique provides fluorescence images with high resolution prior to any reconstruction process. We demonstrate that this technique is well suited to resolve small fluorescence targets located several centimeters deep in tissue.
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87.63.L- Visual imaging
42.30.Wb Image reconstruction; tomography
43.80.Qf Medical diagnosis with acoustics
87.63.Hg Thermography
87.63.D- Ultrasonography

Transient state kinetic investigation of ferritin iron release

G. Ciasca, M. Papi, M. Chiarpotto, M. Rodio, G. Campi, C. Rossi, P. De Sole, and A. Bianconi

Appl. Phys. Lett. 100, 073703 (2012); http://dx.doi.org/10.1063/1.3685706 (3 pages) | Cited 2 times

Online Publication Date: 16 February 2012

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Increased iron concentration in tissues appears to be a factor in the genesis and development of inflammatory and degenerative diseases. By means of real-time small angle x-ray scattering measurements, we studied the kinetics of iron release from the ferritin inorganic core as a function of time and distance from the iron core centre. Accordingly, the iron release process follows a three step model: (i) a defect nucleation in the outer part of the mineral core, (ii) the diffusion of the reducing agent towards the inner part of the core, and (iii) the erosion of the core from the inner to the outer part.
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87.15.B- Structure of biomolecules
87.64.Bx Electron, neutron and x-ray diffraction and scattering
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Charge redistribution in piezoelectric energy harvesters

Mark Stewart, Paul M. Weaver, and Markys Cain

Appl. Phys. Lett. 100, 073901 (2012); http://dx.doi.org/10.1063/1.3685701 (3 pages) | Cited 3 times

Online Publication Date: 15 February 2012

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Piezoelectric energy harvesting cantilevers provide a simple, compact low cost construction method for energy harvesting from vibrational sources. Beam theory predicts a linear distribution of strain along the length of the beam, but the conversion of this strain to electrical energy is dependent on the coverage of the beam with active material. In this paper, we demonstrate how re-distribution of charge within the piezoelectric leads to losses that can be as high as 25% of the potential generated power. Reducing the area coverage of the piezoelectric is shown to significantly improve cantilever power output, with the optimum coverage being 2/3.
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84.60.-h Direct energy conversion and storage
43.38.Fx Piezoelectric and ferroelectric transducers
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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Quasimonoenergetic electron beams from laser wakefield acceleration in pure nitrogen

M. Z. Mo, A. Ali, S. Fourmaux, P. Lassonde, J. C. Kieffer, and R. Fedosejevs

Appl. Phys. Lett. 100, 074101 (2012); http://dx.doi.org/10.1063/1.3685464 (3 pages) | Cited 3 times

Online Publication Date: 13 February 2012

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Quasimonoenergetic electron beams with maximum energy >0.5 GeV and 2 mrad divergence have been generated in pure nitrogen gas via wakefield acceleration with 80 TW, 30 fs laser pulses. Long low energy tail features were typically observed due to continuous ionization injection. The measured peak electron energy decreased with the plasma density, agreeing with the predicted scaling for electrons. The experiments showed a threshold electron density of 3×1018cm-3 for self-trapping. Our experiments suggest that pure Nitrogen is a potential candidate gas to achieve GeV monoenergetic electrons using the ionization induced injection scheme for laser wakefield acceleration.
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52.38.Kd Laser-plasma acceleration of electrons and ions
52.59.Ye Plasma devices for generation of coherent radiation
41.75.Jv Laser-driven acceleration
41.75.Ht Relativistic electron and positron beams
29.20.Ej Linear accelerators
29.25.Bx Electron sources

Slip boundary for fluid flow at rough solid surfaces

Yongping Chen, Chengbin Zhang, Mingheng Shi, and George P. Peterson

Appl. Phys. Lett. 100, 074102 (2012); http://dx.doi.org/10.1063/1.3685490 (4 pages) | Cited 1 time

Online Publication Date: 13 February 2012

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A molecular dynamics simulation of slip boundary for fluid flow past a solid surface incorporating roughness effect as characterized by fractal geometry has been conducted with a focus on the origin of slip, fluid structure, and slip boundary flow. The results indicate that interfacial slip develops provided that the wall is effectively uncorrugated. Compared with the atomically smooth surface, extra viscous dissipation is induced for shear flow past a rough surface and leading to a reduction in boundary slip. In particular, we find that a more irregular topography decreases the boundary slip even for the same statistical roughness height.
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47.45.Gx Slip flows and accommodation
47.15.Cb Laminar boundary layers
47.11.Mn Molecular dynamics methods

A snapshot of electrified nanodroplets undergoing Coulomb fission

Steve Arscott, Cédric Descatoire, Lionel Buchaillot, and Alison E. Ashcroft

Appl. Phys. Lett. 100, 074103 (2012); http://dx.doi.org/10.1063/1.3684979 (4 pages)

Online Publication Date: 14 February 2012

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We investigate the size distribution of electrically charged nanodroplets using atomic force microscopy (AFM). The droplets were generated using nano- and micro-scale silicon tips. A brief voltage pulse results in a “snapshot” of charged nanodroplets on a Cr surface. AFM of the traces left by the nanodroplets revealed that certain droplet diameters are favored suggesting droplet fission due to Rayleigh instability at nanometer length scales. The most occurring droplet diameters are 85.9(4.1) nm and 167.1 nm (9.7 nm) for nano- and micro-scale tips, respectively.
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47.55.D- Drops and bubbles
47.20.Ma Interfacial instabilities (e.g., Rayleigh-Taylor)
47.65.-d Magnetohydrodynamics and electrohydrodynamics

Influence of the renormalization plasma screening on the electron-atom collision in partially ionized plasmas

Woo-Pyo Hong and Young-Dae Jung

Appl. Phys. Lett. 100, 074104 (2012); http://dx.doi.org/10.1063/1.3685495 (4 pages) | Cited 2 times

Online Publication Date: 15 February 2012

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The renormalization plasma screening effects on the elastic electron-atom collision are investigated in partially ionized dense hydrogen plasmas using the eikonal method. It is found that the renormalization plasma screening suppresses the eikonal phase shift and cross section for the elastic electron-atom collision in partially ionized plasmas. It is also found that the renormalization plasma screening effect on the elastic electron-atom collision process increases with an increasing impact parameter. In addition, it is found that the maximum position of the differential cross section is receded from the center of the atom with an increase of the Debye length.
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52.20.Fs Electron collisions
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
34.80.Bm Elastic scattering

Influence of laser irradiated spot size on energetic electron injection and proton acceleration in foil targets

M. Coury, D. C. Carroll, A. P. L. Robinson, X. H. Yuan, C. M. Brenner, M. Burza, R. J. Gray, M. N. Quinn, K. L. Lancaster, Y. T. Li, X. X. Lin, O. Tresca, C.-G. Wahlström, D. Neely, and P. McKenna

Appl. Phys. Lett. 100, 074105 (2012); http://dx.doi.org/10.1063/1.3685615 (4 pages)

Online Publication Date: 15 February 2012

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The influence of irradiated spot size on laser energy coupling to electrons, and subsequently to protons, in the interaction of intense laser pulses with foil targets is investigated experimentally. Proton acceleration is characterized for laser intensities ranging from 2×1018-6×1020 W/cm2, by (1) variation of the laser energy for a fixed irradiated spot size, and (2) by variation of the spot size for a fixed energy. At a given laser pulse intensity, the maximum proton energy is higher under defocus illumination compared to tight focus and the results are explained in terms of geometrical changes to the hot electron injection.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
13.66.Lm Processes in other lepton-lepton interactions
13.60.-r Photon and charged-lepton interactions with hadrons

Trapping and collection of uniform size droplets for nanoparticle synthesis

I. Doh, E. Y. Erdem, and A. P. Pisano

Appl. Phys. Lett. 100, 074106 (2012); http://dx.doi.org/10.1063/1.3685695 (3 pages) | Cited 1 time

Online Publication Date: 15 February 2012

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This paper presents a simple and fast method for droplet trapping and collection and demonstrates nanoparticle synthesis inside these trapped droplets. Since droplet trapping is size-dependent, droplets having various sizes caused by unstable inlet flows can be eliminated. Moreover, the new droplet substitutes the previous one, so we can keep the up-to-date contents of droplets at all times. All trapped droplets can be simply collected at the outlet. We had demonstrated the synthesis of iron oxide nanoparticles inside droplets and collection of them from the device. Due to its simplicity and high efficiency for selective trapping and collection, this method can become one of the key essentials in droplet-based microfluidic assays.
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81.07.Bc Nanocrystalline materials

Profile of the liquid film wetting a channel

J. Emile, F. Casanova, H. Tabuteau, and O. Emile

Appl. Phys. Lett. 100, 074107 (2012); http://dx.doi.org/10.1063/1.3685696 (3 pages) | Cited 2 times

Online Publication Date: 16 February 2012

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We have developed a simple optical technique to investigate the characteristics of liquid films wetting solid surfaces. To validate this technique, we have studied the wetting film that separates a train of lamellas moving through a channel. Total reflection of the laser beam on the wetting film/air interface is used to extract the profile and the thickness of the wetting film. For quasistatic movement of lamellas, we show that the thickness is well described by a capillary number power law.
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68.15.+e Liquid thin films
81.70.Fy Nondestructive testing: optical methods
47.15.gm Thin film flows
68.08.Bc Wetting

Rotating turkeys and self-commutating artificial muscle motors

Benjamin M. O’Brien, Thomas G. McKay, Todd A. Gisby, and Iain A. Anderson

Appl. Phys. Lett. 100, 074108 (2012); http://dx.doi.org/10.1063/1.3685708 (3 pages) | Cited 6 times

Online Publication Date: 16 February 2012

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Electrostatic motors—first used by Benjamin Franklin to rotisserie a turkey—are making a comeback in the form of high energy density dielectric elastomer artificial muscles. We present a self-commutated artificial muscle motor that uses dielectric elastomer switches in the place of bulky external electronics. The motor simply requires a DC input voltage to rotate a shaft (0.73 Nm/kg, 0.24 Hz) and is a step away from hard metallic electromagnetic motors towards a soft, light, and printable future.
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87.85.-d Biomedical engineering
07.07.Tw Servo and control equipment; robots
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.32.Dd Connectors, relays, and switches
84.50.+d Electric motors

Influence of the dynamic plasma shielding on the elastic electron-ion collision in turbulent plasmas

Young-Dae Jung

Appl. Phys. Lett. 100, 074109 (2012); http://dx.doi.org/10.1063/1.3687188 (4 pages)

Online Publication Date: 16 February 2012

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The dynamic plasma shielding effects on the elastic electron-ion collision are investigated in turbulent plasmas using the second-order eikonal method. The results show that the dynamic screening effect strongly enhances the eikonal phase shift as well as the cross section. It is also found that the dynamic screening effect decreases with increasing impact parameter. In addition, the influence of the turbulence suppresses the eikonal phase shift and cross section, especially, for small impact parameters. Moreover, it is found that the dynamic screening effect on the eikonal cross section increases with decreasing thermal energy for large impact parameters.
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52.20.Fs Electron collisions
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
52.35.Ra Plasma turbulence

Material dependence of Casimir forces: Gradient expansion beyond proximity

Giuseppe Bimonte, Thorsten Emig, and Mehran Kardar

Appl. Phys. Lett. 100, 074110 (2012); http://dx.doi.org/10.1063/1.3686903 (4 pages) | Cited 10 times

Online Publication Date: 17 February 2012

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A widely used method for estimating Casimir interactions [H. B. G. Casimir, Proc. K. Ned. Akad. Wet. 51, 793 (1948)] between gently curved material surfaces at short distances is the proximity force approximation (PFA). While this approximation is asymptotically exact at vanishing separations, quantifying corrections to PFA has been notoriously difficult. Here, we use a derivative expansion to compute the leading curvature correction to PFA for metals (gold) at room temperature. We derive an explicit expression for the amplitude math1 of the PFA correction to the force gradient for axially symmetric surfaces. In the non-retarded limit, the corrections to the Casimir free energy are found to scale logarithmically with distance. For gold, math1 has an unusually large temperature dependence.
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65.40.-b Thermal properties of crystalline solids
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Comment on “Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature” [Appl. Phys. Lett. 99, 113509 (2011)]

V. V. Atuchin

Appl. Phys. Lett. 100, 076101 (2012); http://dx.doi.org/10.1063/1.3685470 (1 page) | Cited 1 time

Online Publication Date: 13 February 2012

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Abstract Unavailable
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
79.60.Dp Adsorbed layers and thin films
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Response to “Comment on ‘Forming-free resistive switching in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature’” [Appl. Phys. Lett. 100, 076101 (2012)]

Tung-Ming Pan and Chih-Hung Lu

Appl. Phys. Lett. 100, 076102 (2012); http://dx.doi.org/10.1063/1.3685471 (1 page)

Online Publication Date: 13 February 2012

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Abstract Unavailable
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73.61.Ng Insulators
61.72.jd Vacancies
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
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Publisher’s Note: “Impact of unbalanced charge transport on the efficiency of normal and inverted solar cells” [Appl. Phys. Lett. 100, 013306 (2012)]

J. D. Kotlarski and P. W. M. Blom

Appl. Phys. Lett. 100, 079901 (2012); http://dx.doi.org/10.1063/1.3688479 (1 page)

Online Publication Date: 16 February 2012

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Abstract Unavailable
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99.10.Fg Publisher's note
88.40.J- Types of solar cells
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