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13 Feb 2012

Volume 100, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 100, 073501 (2012); http://dx.doi.org/10.1063/1.3682479 (3 pages)

S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, and B. R. Appleton
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Comment on “Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature” [Appl. Phys. Lett. 99, 113509 (2011)]

V. V. Atuchin

Appl. Phys. Lett. 100, 076101 (2012); http://dx.doi.org/10.1063/1.3685470 (1 page) | Cited 1 time

Online Publication Date: 13 February 2012

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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
79.60.Dp Adsorbed layers and thin films
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Response to “Comment on ‘Forming-free resistive switching in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature’” [Appl. Phys. Lett. 100, 076101 (2012)]

Tung-Ming Pan and Chih-Hung Lu

Appl. Phys. Lett. 100, 076102 (2012); http://dx.doi.org/10.1063/1.3685471 (1 page)

Online Publication Date: 13 February 2012

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Abstract Unavailable
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73.61.Ng Insulators
61.72.jd Vacancies
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
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