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13 Feb 2012

Volume 100, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 100, 073501 (2012); http://dx.doi.org/10.1063/1.3682479 (3 pages)

S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, and B. R. Appleton
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Drawing graphene nanoribbons on SiC by ion implantation

S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, and B. R. Appleton

Appl. Phys. Lett. 100, 073501 (2012); http://dx.doi.org/10.1063/1.3682479 (3 pages) | Cited 6 times

Online Publication Date: 13 February 2012

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We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 °C below the graphitization temperature (TG) of SiC. We find that ion implantation of SiC lowers the TG, allowing selective graphene growth at temperatures below the TG of pristine SiC and above TG of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.
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81.16.Rf Micro- and nanoscale pattern formation
81.40.Gh Other heat and thermomechanical treatments
61.72.up Other materials
61.48.Gh Structure of graphene

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

Katsumasa Kamiya, Moon Young Yang, Seong-Geon Park, Blanka Magyari-Köpe, Yoshio Nishi, Masaaki Niwa, and Kenji Shiraishi

Appl. Phys. Lett. 100, 073502 (2012); http://dx.doi.org/10.1063/1.3685222 (4 pages) | Cited 7 times

Online Publication Date: 13 February 2012

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We study the ON-OFF switching mechanism of oxide-based resistive–random–access–memories using theoretical calculations. Electron deficient vacancies (VO) up to 1+ charge states would stabilize a cohesive filament, while further electron removal will stabilize the disrupted VO configurations with 2+ charges. The VO cohesion-isolation transition upon carrier injection and removal is shown to be a strong driving force in the ON-OFF switching process. We also propose that bipolar or unipolar behavior is determined by how the carriers are injected into VO. The control of the carrier injection by the electrode material selection is essential for desired bipolar switching.
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61.72.jd Vacancies

High efficiency planar Si/organic heterojunction hybrid solar cells

Lining He, Changyun Jiang, Hao Wang, Donny Lai, and Rusli

Appl. Phys. Lett. 100, 073503 (2012); http://dx.doi.org/10.1063/1.3684872 (3 pages) | Cited 8 times

Online Publication Date: 13 February 2012

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We present an efficient hybrid solar cell based on poly (3,4-ethylene-dioxythiophene):polystyrenesulfonate and planar Si with (100) and (111) orientations. The effect of Si surface native oxide on cell performance is studied. Compared to cell with hydrogen-terminated Si surface, the cell with oxygen-terminated Si surface reveals a 530-fold increase in power conversion efficiency (PCE) from 0.02% to 10.6%. The formation of SiOx-Si bonds poses a net positive surface dipole which leads to a favorable band alignment for charge separation. However, thicker oxide degrades cell performance due to higher series resistance. This study demonstrates the highest PCE reported to-date in this field.
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88.40.J- Types of solar cells
88.40.hj Efficiency and performance of solar cells

In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryosho Nakane, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, and Shinichi Takagi

Appl. Phys. Lett. 100, 073504 (2012); http://dx.doi.org/10.1063/1.3685505 (3 pages) | Cited 1 time

Online Publication Date: 14 February 2012

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We have demonstrated InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with self-aligned Co-InGaAs source/drain (S/D). The fabricated MOSEFETs exhibited excellent transistor operation and an on/off ratio of 104 without any S/D ion implantation. It was found that the Co-InGaAs alloys can be formed by direct reaction of Co and InGaAs during annealing at low temperature and that the unreacted Co is selectively etched from Co-InGaAs by an HCl solution without significant etching of Co-InGaAs. We also found that the Co-InGaAs alloys have low sheet resistance of less than 50 Ω/square and relatively low Schottky barrier height of 0.12 eV against electrons in InGaAs with high thermal stability.
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85.30.Tv Field effect devices

Chalcogenide glass surface passivation of a GaAs bipolar transistor for unique avalanche terahertz emitters and picosecond switches

Sergey Vainshtein, Valeri Javadyan, Guoyong Duan, Konstantin Tsendin, Rafael Hovhannisyan, and Juha Kostamovaara

Appl. Phys. Lett. 100, 073505 (2012); http://dx.doi.org/10.1063/1.3685693 (4 pages)

Online Publication Date: 14 February 2012

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The ultra-narrow “collapsing” field domains discovered recently in avalanching GaAs bipolar junction transistor provide a physical basis for designing unique THz emitters and superfast switches. Reliability in devices operating near their volume breakdown voltage requires decisive suppression of premature surface breakdown. We demonstrate here complete, durable surface breakdown suppression through simple deposition of a massive chalcogenide glass layer on the mesa surface by means of a negative charge formed at the interface.
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85.30.Pq Bipolar transistors

Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide

Piero Migliorato, Manju Seok, and Jin Jang

Appl. Phys. Lett. 100, 073506 (2012); http://dx.doi.org/10.1063/1.3685705 (4 pages) | Cited 7 times

Online Publication Date: 15 February 2012

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Accurate knowledge of the gap density of states (DOS) is of paramount importance for process control and modelling of thin-film transistors (TFTs). We present here an approach for flat band determination, based on the combined analysis of transfer and capacitance-voltage characteristics. The method is independent from the DOS knowledge and requires no fitting parameters. Applied here to the case of amorphous indium gallium zinc oxide TFTs, our approach yields key device parameters, helping identification of the physical mechanisms responsible for device to device variations and degradation phenomena. It appears in particular capable to differentiate between interface and bulk effects.
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85.30.Tv Field effect devices

Characteristics of polarization-doped N-face III-nitride light-emitting diodes

Kexiu Dong, Dunjun Chen, Bin Liu, Hai Lu, Peng Chen, Rong Zhang, and Youdou Zheng

Appl. Phys. Lett. 100, 073507 (2012); http://dx.doi.org/10.1063/1.3687181 (3 pages)

Online Publication Date: 16 February 2012

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The electrical and optical performances of N-face GaN-based light-emitting diodes (LEDs) with polarization-induced p-type doping are investigated theoretically. In comparison with the polarization-doped metal-face LED, the N-face one exhibits significant improvements in the hole injection efficiency and electroluminescence intensity when the applied forward voltage exceeds a certain value. Simultaneously, a reversed quantum confined Stark effect is observed in the polarization-doped N-face LED. The detailed physical mechanisms are explained in terms of the calculated energy band diagrams, carrier transport, and distribution of electric field containing polarization filed and free-carrier screening field.
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85.60.Jb Light-emitting devices

GaAs/GaInNAs quantum well and superlattice solar cell

Maykel Courel, Julio C. Rimada, and Luis Hernández

Appl. Phys. Lett. 100, 073508 (2012); http://dx.doi.org/10.1063/1.3687195 (4 pages) | Cited 1 time

Online Publication Date: 17 February 2012

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A theoretical study of GaAs/GaInNAs solar cells based on multiple-quantum well solar cells (MQWSCs) and superlattice solar cell (SLSC) configuration is presented. The conversion efficiency as a function of the quantum well width and depth is modeled for MQWSC, reaching high values. A study of the SLSC viability is also presented. The influence of the cluster width on the conversion efficiency is researched showing a better performance when width and the cluster number are increased. The SLSC conversion efficiency is compared with the maximum conversion efficiency obtained for the MQWSC showing that it is reached an amazing increment of 4%.
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88.40.J- Types of solar cells
88.40.hj Efficiency and performance of solar cells
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