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13 Feb 2012

Volume 100, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 100, 073501 (2012); http://dx.doi.org/10.1063/1.3682479 (3 pages)

S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, and B. R. Appleton
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Low operation voltage and high thermal stability of a WSi2 nanocrystal memory device using an Al2O3/HfO2/Al2O3 tunnel layer

Dong Uk Lee, Hyo Jun Lee, Eun Kyu Kim, Hee-Wook You, and Won-Ju Cho

Appl. Phys. Lett. 100, 072901 (2012); http://dx.doi.org/10.1063/1.3684967 (4 pages) | Cited 3 times

Online Publication Date: 13 February 2012

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A WSi2 nanocrystal nonvolatile memory device was fabricated with an Al2O3/HfO2/Al2O3 (AHA) tunnel layer and its electrical characteristics were evaluated at 25, 50, 70, 100, and 125 °C. The program/erase (P/E) speed at 125 °C was approximately 500 μs under threshold voltage shifts of 1 V during voltage sweeping of 8 V/−8 V. When the applied pulse voltage was ±9 V for 1 s for the P/E conditions, the memory window at 125 °C was approximately 1.25 V after 105 s. The activation energies for the charge losses of 5%, 10%, 15%, 20%, 25%, 30%, and 35% were approximately 0.05, 0.11, 0.17, 0.21, 0.23, 0.23, and 0.23 eV, respectively. The charge loss mechanisms were direct tunneling and Pool-Frenkel emission between the WSi2 nanocrystals and the AHA barrier engineered tunneling layer. The WSi2 nanocrystal memory device with multi-stacked high-K tunnel layers showed strong potential for applications in nonvolatile memory devices.
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84.30.Sk Pulse and digital circuits

Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications

Toshihide Ito, Yuuichiro Mitani, Yasushi Nakasaki, Masahiro Koike, Takuya Konno, Hiroshi Matsuba, Tetsuya Kai, Wakana Kaneko, and Yoshio Ozawa

Appl. Phys. Lett. 100, 072902 (2012); http://dx.doi.org/10.1063/1.3687189 (3 pages)

Online Publication Date: 17 February 2012

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Current-voltage characteristic for a Ge-incorporated Si oxide was investigated. Current enhancement was observed for the electric field larger than 10 MV/cm. Such a current enhancement only under high electric field is expected to improve programming performance without deteriorating reading performance. From secondary ion mass spectrometry and hard x-ray photoelectron spectroscopy analyses and current simulation, it is concluded that the Ge impurity in Ge4+ state around the tunnel oxide/substrate interface enhances the current by trap-assisted tunneling. The programming current enhancement induced by the Ge incorporation is expected to be one of the promising solutions for the next-generation flash memory.
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73.61.Ng Insulators
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
73.40.Gk Tunneling
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