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13 Feb 2012

Volume 100, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 073501 (2012); http://dx.doi.org/10.1063/1.3682479 (3 pages)

S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, and B. R. Appleton
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Mechanism for resistive switching in an oxide-based electrochemical metallization memory

Shanshan Peng, Fei Zhuge, Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen, and Run-Wei Li

Appl. Phys. Lett. 100, 072101 (2012); http://dx.doi.org/10.1063/1.3683523 (4 pages) | Cited 12 times

Online Publication Date: 13 February 2012

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A comparison of the asymmetric OFF-state current-voltage characteristics between Cu/ZnO/Pt and Cu/ZnO/Al-doped ZnO (AZO) electrochemical metallization memory (ECM) cells demonstrates that the Cu filament rupture and rejuvenation occur at the ZnO/Pt (or AZO) interface, i.e., the cathodic interface. Therefore, the filament is most likely to have a conical shape, with wider and narrower diameters formed at the anodic and cathodic interfaces, respectively. It is inferred that the filament growth starts at the anode surface and stops at the cathode surface. Our results indicate that oxide-based ECM cells strongly differ from sulfide- and selenide-based ones in the resistive switching mechanism.
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84.30.Sk Pulse and digital circuits
85.40.Ls Metallization, contacts, interconnects; device isolation

A reconstruction of cubic rs-ZnO on MgO (200) substrate through (100) plane of w-ZnO:rs-ZnO for transparent electronic application

Santosh M. Bobade

Appl. Phys. Lett. 100, 072102 (2012); http://dx.doi.org/10.1063/1.3680556 (4 pages) | Cited 2 times

Online Publication Date: 13 February 2012

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ZnO crystallizes in various crystallographic forms. While, the zinc blende (zb) and the rock salt (rs) structure of ZnO occur at high pressure, wurtzite (w) ZnO is the observed structure under ambient conditions. Interestingly, the high pressure polymorph of ZnO, cubic rs-ZnO oxide is presented on MgO (200) substrate at ordinary condition of temperature and pressure. The lattice constant of rs-ZnO is observed to be 4.203 Å identical to that for MgO. The possible configurational path for the hexagonal to cubic transformation is proposed. The compression of w-ZnO along c-axis, movement of Zn or O sub-lattice along [math10] direction and (110) plane appears to drive the transition. It has also been observed that rs-ZnO on MgO substrate is stable for certain maximum thickness (150 nm). It may be possible to stabilize the cubic phase at lower temperature and smaller thickness level.
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71.20.Nr Semiconductor compounds
62.50.-p High-pressure effects in solids and liquids
61.66.-f Structure of specific crystalline solids

A study of single-crystal silicon diodes integrated on flexible substrates using conductive adhesives

C. Doran, W. Chen, T. L. Alford, and S. S. Lau

Appl. Phys. Lett. 100, 072103 (2012); http://dx.doi.org/10.1063/1.3684970 (3 pages)

Online Publication Date: 13 February 2012

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In this study, we investigated the possibility of fabricating flexible single-crystal Si-Pd diodes on polymer substrates using silver-filled conductive tape or epoxy. This simple technique mitigates the complexity of process-intensive metal-bonding schemes to achieve backside electrical contacts on semiconductor devices. The performance of such devices is evaluated while bent to a 1.2 cm radius of curvature. The longer-term stability of the devices fabricated is also briefly discussed.
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85.30.Kk Junction diodes

Threading dislocation reduction in transit region of GaN terahertz Gunn diodes

Liang Li, Lin-An Yang, Jin-Cheng Zhang, Jun-Shuai Xue, Sheng-Rui Xu, Ling Lv, Yue Hao, and Mu-Tong Niu

Appl. Phys. Lett. 100, 072104 (2012); http://dx.doi.org/10.1063/1.3685468 (4 pages)

Online Publication Date: 14 February 2012

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An effect of the position of notch-doping layer in 1-μm GaN Gunn diode on threading dislocations (TDs) distribution is investigated by transmission electron microscopy. Compared with the top-notching-layer (TNL) structure, the bottom-notching-layer (BNL) structure can efficiently reduce the TDs density and improve the crystal quality in the transit region of GaN Gunn diode because it exhibits twice-transition of growth mode from atomic step flow to layer-by-layer nucleation and leads to a significant annihilation of TDs before penetrating into the transit region. X-ray diffraction and Raman spectroscopy reveal that the BNL structure has less compressive stress than the TNL structure.
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85.30.Tv Field effect devices

Electronic transport in doped mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

L. R. Wienkes, C. Blackwell, and J. Kakalios

Appl. Phys. Lett. 100, 072105 (2012); http://dx.doi.org/10.1063/1.3685491 (3 pages) | Cited 3 times

Online Publication Date: 14 February 2012

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We report observations of three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH), and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 50 K is tentatively ascribed to the freeze out of the phonon modes.
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73.61.Cw Elemental semiconductors
61.46.Hk Nanocrystals
63.20.kg Phonon-phonon interactions
72.20.Ee Mobility edges; hopping transport
73.50.Dn Low-field transport and mobility; piezoresistance

Electronic structure of ternary CdxZn1−xO (0 ≤ x ≤ 0.075) alloys

Henry Hung-Chun Lai, Vladimir L. Kuznetsov, Russell G. Egdell, and Peter P. Edwards

Appl. Phys. Lett. 100, 072106 (2012); http://dx.doi.org/10.1063/1.3684251 (4 pages) | Cited 1 time

Online Publication Date: 14 February 2012

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Narrowing of the electronic bandgap of ZnO by doping with cadmium opens up further potential uses of the material for photocatalytic applications. However, the mechanism of this important bandgap modification is still unclear. This letter demonstrates that for doped materials, the Fermi level resides within the bandgap in the bulk but lies above the conduction band minimum at the surface of the material, thus producing downward band bending and electron accumulation in the near surface region.
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71.20.Nr Semiconductor compounds
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
73.20.At Surface states, band structure, electron density of states
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source

Man Hoi Wong, Feng Wu, Christophe A. Hurni, Soojeong Choi, James S. Speck, and Umesh K. Mishra

Appl. Phys. Lett. 100, 072107 (2012); http://dx.doi.org/10.1063/1.3686922 (4 pages) | Cited 2 times

Online Publication Date: 17 February 2012

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InAlN lattice-matched to GaN was grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. The alloy composition, growth conditions, and strain coherence of the InAlN were verified by high resolution x-ray diffraction ω-2θ scans and reciprocal space maps. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy of the InAlN revealed the absence of lateral composition modulation that was observed in the films grown by plasma-assisted MBE. InAlN/AlN/GaN high electron mobility transistors with smooth surfaces were fabricated with electron mobilities exceeding 1600 cm2/Vs and sheet resistances below 244 Ω/sq.
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68.55.ag Semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
85.30.Tv Field effect devices

p-f hybridization in the ferromagnetic semiconductor HoN

J. D. Brown, J. E. Downes, C. J. McMahon, B. C. C. Cowie, A. Tadich, L. Thomsen, J. H. Guo, and P. A. Glans

Appl. Phys. Lett. 100, 072108 (2012); http://dx.doi.org/10.1063/1.3687176 (4 pages) | Cited 1 time

Online Publication Date: 17 February 2012

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The electronic structure of thin film HoN has been studied using soft x-ray spectroscopy. The combination of soft x-ray emission, x-ray absorption, and photoemission techniques yields direct evidence for hybridization between the N 2p and the Ho 4f states, previously unseen in this or related rare earth nitride systems. The N 2p states extend up to 10 eV below the Fermi level to nearly twice the binding energy as previously believed. Optical spectroscopy yields a minimum direct gap of 1.48 eV. In light of these results, we identify HoN as a prime candidate for spin-diffusion and spintronics applications.
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71.20.Nr Semiconductor compounds
78.70.En X-ray emission spectra and fluorescence
78.66.Li Other semiconductors
75.50.Pp Magnetic semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces
78.70.Dm X-ray absorption spectra

Multi-dimensional laser spectroscopy of exciton polaritons with spatial light modulators

P. Mai, B. Pressl, M. Sassermann, Z. Vörös, G. Weihs, C. Schneider, A. Löffler, S. Höfling, and A. Forchel

Appl. Phys. Lett. 100, 072109 (2012); http://dx.doi.org/10.1063/1.3687180 (3 pages)

Online Publication Date: 17 February 2012

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We describe an experimental system that allows one to easily access the dispersion curve of exciton-polaritons in a microcavity. Our approach is based on two spatial light modulators, one for changing the excitation angles (momenta), and the other for tuning the excitation wavelength. We show that with this setup, an arbitrary number of states can be excited accurately and that re-configuration of the excitation scheme can be done at high speed.
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42.62.Fi Laser spectroscopy
42.79.Hp Optical processors, correlators, and modulators
42.60.Fc Modulation, tuning, and mode locking

Counting statistics in an InAs nanowire quantum dot with a vertically coupled charge detector

T. Choi, T. Ihn, S. Schön, and K. Ensslin

Appl. Phys. Lett. 100, 072110 (2012); http://dx.doi.org/10.1063/1.3687198 (4 pages) | Cited 2 times

Online Publication Date: 17 February 2012

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A gate-defined quantum dot (QD) in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as time-resolved charge detection experiments for electron flow through the quantum dot. We demonstrate that the Fano factor describing shot noise or time-correlations in single-electron transport depends in the theoretically expected way on the asymmetry of the tunneling barriers even in a regime where the thermal energy kBT is comparable to the single-particle level spacing in the dot.
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73.63.Kv Quantum dots
72.70.+m Noise processes and phenomena
73.40.Gk Tunneling
73.63.Nm Quantum wires
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