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13 Feb 2012

Volume 100, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 073501 (2012); http://dx.doi.org/10.1063/1.3682479 (3 pages)

S. Tongay, M. Lemaitre, J. Fridmann, A. F. Hebard, B. P. Gila, and B. R. Appleton
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Photonically enhanced flow boiling in a channel coated with carbon nanotubes

Arun S. Kousalya, Chad N. Hunter, Shawn A. Putnam, Timothy Miller, and Timothy S. Fisher

Appl. Phys. Lett. 100, 071601 (2012); http://dx.doi.org/10.1063/1.3681594 (4 pages) | Cited 4 times

Online Publication Date: 14 February 2012

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High heat dissipation rates are enabled by multi-phase cooling schemes owing to latent heat uptake. We demonstrate enhanced flow boiling from a carbon nanotube (CNT)-coated copper surface exposed to low-intensity ultraviolet (UV)-visible excitation. Compared to non-illuminated results, the average boiling incipience temperature decreased by 4.6 °C and heat transfer coefficients improved by 41.5% with light exposure. These improved results are attributed to augmented hydrophilicity upon exposure to UV light and possible nanoscale opto-thermal effects, and suggest opportunities for active temperature control of temperature-sensitive devices.
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81.65.-b Surface treatments
78.40.-q Absorption and reflection spectra: visible and ultraviolet
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
61.46.Fg Nanotubes

Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy

A. A. Demkov, H. Seo, X. Zhang, and J. Ramdani

Appl. Phys. Lett. 100, 071602 (2012); http://dx.doi.org/10.1063/1.3685508 (4 pages) | Cited 3 times

Online Publication Date: 14 February 2012

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We propose using the Zintl-Klemm (Z-K) bonding to engineer transition layers that provide wetting between ionic oxides and covalent semiconductors to ensure two-dimensional epitaxial growth. Using density functional theory to test this concept, we consider the thermodynamics of wetting at the GaAs/SrTiO3 interface, and identify Sr aluminide SrAl2 as the Z-K wetting layer. We discuss the atomic structure and bonding at the interface, and estimate the conduction band discontinuity to be 0.6 eV, in good agreement with recent experiment.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.35.Md Surface thermodynamics, surface energies
71.20.-b Electron density of states and band structure of crystalline solids
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
68.55.ag Semiconductors
68.08.Bc Wetting

Physical model for the laser induced forward transfer process

Tobias C. Röder and Jürgen R. Köhler

Appl. Phys. Lett. 100, 071603 (2012); http://dx.doi.org/10.1063/1.3685469 (3 pages) | Cited 3 times

Online Publication Date: 15 February 2012

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This paper presents a numerical model which describes the underlying physical processes during laser induced forward transfer. The laser induced forward transfer uses a pulsed laser to transfer thin layers from a transparent support to a substrate. The model predicts the threshold energies Eth as well as the blow-off time tblow, thus allowing a profound physical understanding of the transfer process. The good agreement of simulated with measured Eth and tblow of thin nickel layers demonstrates the accuracy of the model. The model shows that gasification of the soda-lime glass support is the main driving force of the transfer process.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.15.Fg Pulsed laser ablation deposition
64.70.F- Liquid-vapor transitions

Altering the sulfur content in the propanethiol plasma polymers using the capacitive-to-inductive mode transition in inductively coupled plasma discharge

Damien Thiry, Nikolay Britun, Stephanos Konstantinidis, Jean-Pierre Dauchot, Laurent Denis, and Rony Snyders

Appl. Phys. Lett. 100, 071604 (2012); http://dx.doi.org/10.1063/1.3686902 (3 pages) | Cited 1 time

Online Publication Date: 15 February 2012

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The effect of the transition from capacitive (E) to inductive (H) mode on propanethiol plasma polymer films properties was investigated by optical emission as well as by x-ray photoelectron spectroscopy. The E mode is characterized by low deposition rate and by high sulfur content in the films (∼40% vs ∼20% in H mode). After aging, a strong decrease of sulfur to carbon content (from ∼0.75 to 0.13), attributed to desorption of unbounded sulfur-based molecules (e.g., H2S), is detected at low power in E mode. The importance of the E-H transition for altering the film properties is highlighted.
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78.66.Qn Polymers; organic compounds
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.43.Nr Desorption kinetics
52.77.Dq Plasma-based ion implantation and deposition

Vibrational properties of alkyl monolayers on Si(111) surfaces: Predictions from ab-initio calculations

Yan Li and Giulia Galli

Appl. Phys. Lett. 100, 071605 (2012); http://dx.doi.org/10.1063/1.3685489 (3 pages) | Cited 2 times

Online Publication Date: 16 February 2012

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Vibrational properties of Si(111) surfaces terminated by different functional groups have been investigated using density functional theory (DFT). The variations in methyl-related frequencies in different chemical environments, e.g., in methane, methylsilane and ethylsilane, and the methyl- and ethyl-terminated Si(111) surfaces are well predicted by DFT within the local density approximation. In particular, DFT calculations provide useful information on trends and mode assignments in cases where the surface coverage and morphology are not well established experimentally, e.g., in the case of the ethyl-terminated Si(111) surface. Influences of DFT exchange-correlation functionals and anharmonic effects on computed vibrational frequencies are discussed.
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63.20.dk First-principles theory
63.20.Ry Anharmonic lattice modes
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
68.35.bg Semiconductors
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

H. Jussila, P. Mattila, J. Oksanen, A. Perros, J. Riikonen, M. Bosund, A. Varpula, T. Huhtio, H. Lipsanen, and M. Sopanen

Appl. Phys. Lett. 100, 071606 (2012); http://dx.doi.org/10.1063/1.3687199 (4 pages) | Cited 1 time

Online Publication Date: 17 February 2012

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This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.
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84.32.Tt Capacitors
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