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Applied Physics Letters / Volume 100 / Issue 8 / SEMICONDUCTORS

Appl. Phys. Lett. 100, 082105 (2012); http://dx.doi.org/10.1063/1.3688173 (4 pages)

Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

M. Yoshikawa1, S. Ogawa1, K. Inoue1, H. Seki1, Y. Tanahashi1, H. Sako1, Y. Nanen2, M. Kato2, and T. Kimoto2

1Toray Research Center Inc., Sonoyama 3-3-7, Otsu, Shiga 520-8567, Japan
2Department of Electronic Science and Engineering, Kyoto University, A1-301 Katsura, Nishikyo, Kyoto 615-8510, Japan

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(Received 30 December 2011; accepted 5 February 2012; published online 22 February 2012)

We measured cathodoluminescence (CL) spectra of SiO2 films grown on 4H-SiC wafers and found that for an acceleration voltage of 5 kV, CL peaks at 460 and 490 nm, assigned to oxygen vacancy centers (OVCs), become weak by post-oxidation annealing in N2O ambient at 1300 °C whereas the CL peak around 580 nm, related to Si-N bonding structures, becomes intense. Furthermore, the peak assigned to N-Si3 configurations in x-ray photoelectron spectroscopy (XPS) spectra was observed in the SiO2/SiC interface in only samples annealed in N2O ambient. These results suggest that the interface trap densities decrease and the channel mobility in n-type MOS capacitors increases by the termination of dangling bonds by the N atom in the SiO2/SiC interface. CL spectroscopy and XPS provide us with extensive information on OVCs and dangling bonds in the SiO2/SiC interface on the 4H-SiC substrate.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

annealing, cathodoluminescence, dangling bonds, epitaxial layers, interface states, silicon compounds, vacancies (crystal), X-ray photoelectron spectra

PACS

International Patent Classification (IPC)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3688173

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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