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20 Feb 2012

Volume 100, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 082401 (2012); http://dx.doi.org/10.1063/1.3684972 (4 pages)

Elizabeth Rapoport and Geoffrey S. D. Beach
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Multi-splitting and self-similarity of band gap structures in quasi-periodic plates of Cantor series

Hong-Xing Ding, Zhong-Hua Shen, Xiao-Wu Ni, and Xue-Feng Zhu

Appl. Phys. Lett. 100, 083501 (2012); http://dx.doi.org/10.1063/1.3687648 (3 pages) | Cited 1 time

Online Publication Date: 21 February 2012

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The authors have demonstrated the multi-splitting and self-similarity of the band gap structures in quasi-periodic plates of Cantor series. The splitting peaks give the regularity of tri-branching. A semi-quantitative explanation is proposed in which the inherent cavity-like structure is proven to play the essential role in the phenomena of multi-splitting and self-similarity, which gives a reliable way to predict where and how the band gap is splitting in the quasi-periodic systems. Possible applications are discussed.
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71.20.-b Electron density of states and band structure of crystalline solids
68.35.Iv Acoustical properties

Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

Yanzhen Wang, Yen-Ting Chen, Fei Xue, Fei Zhou, Yao-Feng Chang, Burt Fowler, and Jack C. Lee

Appl. Phys. Lett. 100, 083502 (2012); http://dx.doi.org/10.1063/1.3687724 (3 pages) | Cited 5 times

Online Publication Date: 21 February 2012

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The resistive switching between high impedance (“off” state) and low impedance (“on” state) is demonstrated on e-beam evaporated SiOx/Si resistive random access memory devices in this paper. The set and reset voltages are independent of the device perimeters and oxide thicknesses after electroforming. A circuit model including filament conductance G is proposed to explain the measured “on” state capacitances under frequency ranges from 1 KHz to 1 MHz. The electrochemical redox process is adopted to explain the formation of Si filament during electroforming and switching. “On” and “off” currents were also measured at various operating temperatures. It is found that both set and reset voltages increase as temperature decreases and that no electroforming is exhibited at low temperature T = 77 K.
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84.30.Sk Pulse and digital circuits

Direct measurements and numerical simulations of gas charging in microelectromechanical system capacitive switches

A. Venkattraman, A. Garg, D. Peroulis, and A. A. Alexeenko

Appl. Phys. Lett. 100, 083503 (2012); http://dx.doi.org/10.1063/1.3688176 (4 pages) | Cited 5 times

Online Publication Date: 22 February 2012

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Gas breakdown in microelectromechanical system capacitive switches is demonstrated using high resolution current measurements and by particle-in-cell/Monte Carlo collision (PIC/MCC) simulations. Measurements show an electric current through a 3 μm air gap increasing exponentially with voltage, starting at 60 V. PIC/MCC simulations with Fowler-Nordheim [Proc. R. Soc. London, Ser. A 119, 173 (1928)] field emission reveal self-sustained discharges with significant ion enhancement and a positive space charge. The effective ion-enhanced field emission coefficient increases with voltage up to about 0.3 with an electron avalanche occurring at 159 V. The measurements and simulations demonstrate a charging mechanism for microswitches consistent with earlier observations of gas pressure and composition effects on lifetime.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

Jong Tae Park, Jin Young Kim, and Jean Pierre Colinge

Appl. Phys. Lett. 100, 083504 (2012); http://dx.doi.org/10.1063/1.3688245 (3 pages) | Cited 2 times

Online Publication Date: 22 February 2012

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Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been experimentally compared between accumulation mode (AM) p-channel multigate transistors (pMuGFETs) and junctionless (JL) pMuGFET. NBTI degradation is less significant in junctionless pMuGFETs than AM pMuGFETs. The threshold voltage shift is less significant in junctionless transistors than AM transistors. The device simulation shows that the peak of lateral electric field and the impact ionization rate of AM device are larger than those of junctionless devices.
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85.30.Tv Field effect devices

Observation of vapor pressure enhancement of rare-earth metal-halide salts in the temperature range relevant to metal-halide lamps

J. J. Curry, E. G. Estupiñán, W. P. Lapatovich, A. Henins, S. D. Shastri, and J. E. Hardis

Appl. Phys. Lett. 100, 083505 (2012); http://dx.doi.org/10.1063/1.3687171 (3 pages)

Online Publication Date: 22 February 2012

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Total vapor-phase densities of Dy in equilibrium with a DyI3/InI condensate and Tm in equilibrium with a TmI3/TlI condensate have been measured for temperatures between 900 K and 1400 K. The measurements show strong enhancements in rare-earth vapor densities compared to vapors in equilibrium with the pure rare-earth metal-halides. The measurements were made with x-ray induced fluorescence on the sector 1-ID beam line at the Advanced Photon Source. The temperature range and salt mixtures are relevant to the operation of metal-halide high-intensity discharge lamps.
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06.30.Dr Mass and density

Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity

G. C. Dyer, S. Preu, G. R. Aizin, J. Mikalopas, A. D. Grine, J. L. Reno, J. M. Hensley, N. Q. Vinh, A. C. Gossard, M. S. Sherwin, S. J. Allen, and E. A. Shaner

Appl. Phys. Lett. 100, 083506 (2012); http://dx.doi.org/10.1063/1.3687698 (4 pages) | Cited 6 times

Online Publication Date: 23 February 2012

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A multi-gate high electron mobility transistor coupled to a log-periodic antenna was engineered to detect sub-terahertz radiation through resonant excitation of plasmon modes in the channel. The device was integrated with a silicon hyper-hemispherical lens in order to enhance radiation collection and eliminate parasitic substrate modes. The continuous detector response spectrum from 185 GHz to 380 GHz indicates the presence of distinct collective plasmonic cavity modes resulting from the quantization of the plasmon wavevector. In a bolometric detection mode, a noise equivalent power of less than 50 pW/Hz1/2 and a responsivity exceeding 100 kV/W have been measured at 11.5 K.
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85.30.Tv Field effect devices
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
84.40.Ba Antennas: theory, components and accessories

Electrical properties of magnetic nanocontact devices computed using finite-element simulations

S. Petit-Watelot, R. M. Otxoa, and M. Manfrini

Appl. Phys. Lett. 100, 083507 (2012); http://dx.doi.org/10.1063/1.3687915 (4 pages) | Cited 2 times

Online Publication Date: 23 February 2012

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We compute the electrical current flow and associated Oersted fields in magnetic nanocontact (NC) systems with finite-element simulations. Underneath the nanocontact, the current distribution is found to be mainly perpendicular to the film plane, while the flow is essentially in the film plane outside the nanocontact region. For circular nanocontacts, we provide criteria for which the cylindrical approximation remains valid for electrical flow in asymmetric rectangular devices. The nature of the current distribution, and the induced field, is a key to understanding spin-torque driven magnetization dynamics in such systems.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
85.70.Ay Magnetic device characterization, design, and modeling
84.32.Dd Connectors, relays, and switches
84.30.Ng Oscillators, pulse generators, and function generators

Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors

Y. G. Xiao, M. H. Tang, J. C. Li, C. P. Cheng, B. Jiang, H. Q. Cai, Z. H. Tang, X. S. Lv, and X. C. Gu

Appl. Phys. Lett. 100, 083508 (2012); http://dx.doi.org/10.1063/1.3688046 (4 pages)

Online Publication Date: 23 February 2012

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The electrical properties of negative capacitance (NC) ferroelectric field-effect transistors (FeFETs) were theoretically investigated in the temperature range from 280 to 360 K. The derived results indicate that for a fixed thickness of ferroelectric thin film the amplification of surface potential can be tuned by temperature. The transfer and output characteristics degrade with increasing temperature due to the gradual loss of ferroelectric NC effect. It is expected that the derived results may provide some insight into the design and performance improvement for the low power dissipation applications of FeFETs.
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85.75.Hh Spin polarized field effect transistors
77.80.-e Ferroelectricity and antiferroelectricity

A unified model for unipolar resistive random access memory

Kwangseok Lee, Jung-Shik Jang, Yongwoo Kwon, Keun-Ho Lee, Young-Kwan Park, and Woo Young Choi

Appl. Phys. Lett. 100, 083509 (2012); http://dx.doi.org/10.1063/1.3688944 (3 pages) | Cited 2 times

Online Publication Date: 23 February 2012

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A unified model for resistive random access memory has been proposed for the accurate prediction of forming, reset, and set operations. Unlike conventional random circuit breaker network model, the unified model can simulate realistic cell structures with higher accuracy.
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84.30.Sk Pulse and digital circuits
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