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20 Feb 2012

Volume 100, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 100, 082401 (2012); http://dx.doi.org/10.1063/1.3684972 (4 pages)

Elizabeth Rapoport and Geoffrey S. D. Beach
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High dielectric tunability in lead niobate pyrochlore films

M. Mirsaneh, B. E. Hayden, E. Furman, S. Perini, M. T. Lanagan, and I. M. Reaney

Appl. Phys. Lett. 100, 082901 (2012); http://dx.doi.org/10.1063/1.3687722 (3 pages) | Cited 3 times

Online Publication Date: 21 February 2012

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High throughput physical vapor deposition has been used to grow crystalline PbnNb2O5+n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (ɛr) and dielectric loss (tan δ) were frequency independent between 100 Hz and 1 MHz and −60 °C–100 °C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb1.2Nb2O6.2, PN, Pb ≈ 38%) of ∼26% (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan δ ∼ 0.0009 (0.013–0.005 in BST and 0.008–0.0005 in BZN), comparable or superior ɛr of 419 (450 in BST and 160–220 in BZN) and 26% tunability (∼50% in BST and 3.5% in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.aj Insulators
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Dielectric responses and scaling behaviors in Aurivillius Bi6Ti3Fe2O18 multiferroic thin films

W. Bai, G. Chen, J. Y. Zhu, J. Yang, T. Lin, X. J. Meng, X. D. Tang, C. G. Duan, and J. H. Chu

Appl. Phys. Lett. 100, 082902 (2012); http://dx.doi.org/10.1063/1.3688033 (4 pages) | Cited 5 times

Online Publication Date: 22 February 2012

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Dielectric responses and scaling behaviors of Aurivillius Bi6Ti3Fe2O18 (BTF2) multiferroic thin films were systemically detailed by the temperature-dependent dielectric/impedance spectroscopy. We clarified two dielectric relaxation processes presented in grain interior of the BTF2 films. One relaxation below ∼500 K was proposed to associate with the localized hopping process of carrier between Fe3+ and Fe2+ inside the grains. Another one above ∼500 K arose from the long-range movement of oxygen vacancies. The scaling behaviors implied that the distribution of relaxation times for oxygen vacancies was temperature independent while the dynamical processes for the hopping carriers presumably depended on temperature.
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77.22.Gm Dielectric loss and relaxation
61.72.jd Vacancies
77.80.Dj Domain structure; hysteresis
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
75.85.+t Magnetoelectric effects, multiferroics
77.55.Nv Multiferroic/magnetoelectric films

Phase transition behaviors of PbZr1−xTixO3 single crystals as revealed by elastic anomalies and central peaks

Tae Hyun Kim, Jae-Hyeon Ko, Seiji Kojima, Alexei A. Bokov, Xifa Long, and Zuo-Guang Ye

Appl. Phys. Lett. 100, 082903 (2012); http://dx.doi.org/10.1063/1.3688050 (4 pages) | Cited 5 times

Online Publication Date: 22 February 2012

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Two PbZr1−xTixO3 (PZT) single crystals with x ≈ 0.45 and 0.42 near the morphotropic phase boundary were studied by Brillouin light scattering, giving rise to the first single-crystal elastic data which were discussed in terms of the correlation between the acoustic anomalies and the phase transition sequence. The ferroelectric phase transition of PZT with x ≈ 0.45 was second order (or very close to the second order) which accompanied very large polarization fluctuations resulting in the formation of strong central peaks. A revised phase diagram of PZT was suggested including refinement of the tilt phase boundary and a possible existence of tricritical point.
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77.84.Cg PZT ceramics and other titanates
64.60.Kw Multicritical points
78.35.+c Brillouin and Rayleigh scattering; other light scattering
77.80.-e Ferroelectricity and antiferroelectricity

Stabilization of mixed-phase structures in highly strained BiFeO3 thin films via chemical-alloying

Anoop R. Damodaran, Eric Breckenfeld, Amber K. Choquette, and Lane W. Martin

Appl. Phys. Lett. 100, 082904 (2012); http://dx.doi.org/10.1063/1.3688175 (4 pages) | Cited 3 times

Online Publication Date: 22 February 2012

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Chemical-alloying is demonstrated to stabilize the mixed-phase structure of highly strained epitaxial BiFeO3/LaAlO3 (001) heterostructures. Such mixed-phase structures are essential for the large electromechanical responses (4%–5% strains under applied electric field); however, films with thickness exceeding 250 nm undergo an epitaxial breakdown to a non-epitaxial bulk-like rhombohedral-phase. Such an irreversible transformation of the mixed-phase structure limits the magnitude of the net surface displacement associated with these field-induced phase transformations. Using high-resolution x-ray diffraction reciprocal space mapping and scanning-probe-based studies, we show that chemical-alloying of BiFeO3 thin films can stabilize these mixed-phase structures and delay the onset of epitaxial breakdown.
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68.55.aj Insulators
77.65.-j Piezoelectricity and electromechanical effects
77.22.Jp Dielectric breakdown and space-charge effects
75.50.Ee Antiferromagnetics
77.80.-e Ferroelectricity and antiferroelectricity
75.80.+q Magnetomechanical effects, magnetostriction

Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

Dayu Zhou (周大雨), J. Müller, Jin Xu (徐进), S. Knebel, D. Bräuhaus, and U. Schröder

Appl. Phys. Lett. 100, 082905 (2012); http://dx.doi.org/10.1063/1.3688915 (4 pages)

Online Publication Date: 22 February 2012

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Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. Polarity asymmetry of the frequency dependent coercive field was explained by interfacial effects. No ferroelectric-paraelectric phase transition was observed at temperatures up to 478 K. Clear distinctions between current evolutions with or without polarization switching were correlated to the time competition between the measurement and the response of relaxation mechanisms.
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77.55.fp Other ferroelectric films
73.61.Ng Insulators
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
77.80.Fm Switching phenomena
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