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20 Feb 2012

Volume 100, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 082401 (2012); http://dx.doi.org/10.1063/1.3684972 (4 pages)

Elizabeth Rapoport and Geoffrey S. D. Beach
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Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics

Jong-Chang Woo, Yoon-Soo Chun, Young-Hee Joo, and Chang-Il Kim

Appl. Phys. Lett. 100, 081101 (2012); http://dx.doi.org/10.1063/1.3687702 (3 pages) | Cited 3 times

Online Publication Date: 21 February 2012

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Metal–insulator–metal (MIM) capacitors with Al2O3/TiO2/Al2O3 (ATA) dielectrics were fabricated and investigated. At 0 V and frequencies of 100 kHz and 1 MHz, the MIM capacitors with ATA (3/20/3 nm) and ATA (6/20/6 nm) thin films had low leakage current densities of approximately 5.2 × 10−13 and 1.5 × 10−13 A/cm2, respectively, and high capacitance densities of ∼19.48 and ∼20.13 fF/μm2, respectively. The frequency dispersion effect for these MIM capacitors was very small. The electrical transport mechanism, which is the device conduction mechanism, was determined for the varying structures of MIM capacitors.
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73.40.Rw Metal-insulator-metal structures

Stabilized hot electron bolometer heterodyne receiver at 2.5 THz

D. J. Hayton, J. R. Gao, J. W. Kooi, Y. Ren, W. Zhang, and G. de Lange

Appl. Phys. Lett. 100, 081102 (2012); http://dx.doi.org/10.1063/1.3688032 (4 pages) | Cited 2 times

Online Publication Date: 21 February 2012

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We report on a method to stabilize a hot electron bolometer (HEB) mixer at 2.5 THz. The technique utilizes feedback control of the local oscillator (LO) laser power by means of a swing-arm actuator placed in the optical beam path. We demonstrate that this technique yields a factor of 50 improvement in the spectroscopic Allan variance time which is shown to be over 30 s in a 12 MHz noise fluctuation bandwidth. Furthermore, broadband signal direct detection effects may be minimized by this technique. The technique is versatile and can be applied to practically any local oscillator at any frequency.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

85 °C error-free operation at 38 Gb/s of oxide-confined 980-nm vertical-cavity surface-emitting lasers

P. Moser, P. Wolf, A. Mutig, G. Larisch, W. Unrau, W. Hofmann, and D. Bimberg

Appl. Phys. Lett. 100, 081103 (2012); http://dx.doi.org/10.1063/1.3688040 (3 pages) | Cited 2 times

Online Publication Date: 21 February 2012

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Extremely temperature stable oxide-confined high-speed 980-nm vertical-cavity surface-emitting lasers (VCSELs) for optical interconnects are presented. Error-free performance at 38 Gb/s and 40 Gb/s is demonstrated at temperatures as high as 85 °C and 75 °C, respectively. No adjustment of driving conditions was found to be necessary from room temperature up to 85 °C. In addition, energy-efficient 35 Gb/s operation at a very low pump current of only 4 mA is demonstrated with a low dissipated heat-to-bit rate ratio of 233 mW/Tbps. These are by far the highest bit rates reported for VCSELs at such temperatures.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Highly modified spontaneous emissions in YVO4:Eu3+ inverse opal and refractive index sensing application

Yongsheng Zhu, Wen Xu, Hanzhuang Zhang, Wei Wang, Liu Tong, Sai Xu, Zhipeng Sun, and Hongwei Song

Appl. Phys. Lett. 100, 081104 (2012); http://dx.doi.org/10.1063/1.3688167 (4 pages) | Cited 3 times

Online Publication Date: 21 February 2012

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Here, we present strong modification of photonic crystals on the spontaneous emissions of Eu3+ ions in YVO4:Eu3+ inverse opal. It is interesting that due to the effect of local field, the 5D0-7FJ radiative lifetimes of Eu3+ ions in the PCs are all prolonged ∼2.5 times in contrast to the grinded reference (REF) in air, consistent with the empty cavity model. The photonic stop band and the radiative lifetime are both highly sensitive to the refractive index of the infiltrated solutions, in accordance with the real cavity model.
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42.70.Qs Photonic bandgap materials
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Improved dielectric functions in metallic films obtained via template stripping

Jong Hyuk Park, Prashant Nagpal, Sang-Hyun Oh, and David J. Norris

Appl. Phys. Lett. 100, 081105 (2012); http://dx.doi.org/10.1063/1.3687910 (4 pages) | Cited 4 times

Online Publication Date: 22 February 2012

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We compare the dielectric functions of silver interfaces obtained via thermal evaporation with those obtained with template stripping. Ellipsometry measurements show that the smoother template-stripped surfaces exhibit effective dielectric functions with a more negative real component and a smaller imaginary component, implying higher conductivity and less energy loss, respectively. These results agree with the relation between dielectric function and surface roughness derived from combining the effective-medium model and the Drude-Lorentz model. The improvement in the effective dielectric properties shows that metallic films prepared via template stripping can be favorable for applications in electronics, nanophotonics, and plasmonics.
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77.22.Ch Permittivity (dielectric function)
78.66.Bz Metals and metallic alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

David S. Meyaard, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Sang-Heon Han, Min-Ho Kim, Cheolsoo Sone, Seung Jae Oh, and Jong Kyu Kim

Appl. Phys. Lett. 100, 081106 (2012); http://dx.doi.org/10.1063/1.3688041 (3 pages) | Cited 2 times

Online Publication Date: 22 February 2012

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The effect of chip area on the temperature-dependent light-output power (LOP) in GaInN-based light-emitting diodes (LEDs) is investigated. The larger the chip size, the faster the reduction in LOP with increasing temperature becomes, indicating that increasing the size of LED chips, a technology trend for reducing the efficiency droop at high currents, is detrimental for high temperature-tolerant LEDs. In addition, it is found that regardless of chip size, the temperature-dependent LOP is identical for the LEDs operating at the same current density.
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85.60.Jb Light-emitting devices

Multimodal strong coupling of photonic crystal cavities of dissimilar size

Mehmet A. Dündar, Joost A. M. Voorbraak, Richard Nötzel, Andrea Fiore, and Rob W. van der Heijden

Appl. Phys. Lett. 100, 081107 (2012); http://dx.doi.org/10.1063/1.3688301 (4 pages) | Cited 2 times

Online Publication Date: 22 February 2012

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A photonic crystal three missing holes nanocavity, having only a few modes, is coupled to a 60 missing holes long multimode cavity, both fabricated in the same InGaAsP membrane. The coupling was studied in detail by the photothermal tuning of the small cavity over about three free spectral ranges of the large cavity. Strong coupling effects, involving at least three large cavity modes simultaneously, were observed from level anticrossing data. The observations are excellently reproduced by a model of coupled Fabry Perot resonators.
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42.70.Qs Photonic bandgap materials
42.86.+b Optical workshop techniques

Whispering gallery mode selection in optical bottle microresonators

Ming Ding, Ganapathy Senthil Murugan, Gilberto Brambilla, and Michalis N. Zervas

Appl. Phys. Lett. 100, 081108 (2012); http://dx.doi.org/10.1063/1.3688601 (3 pages) | Cited 2 times

Online Publication Date: 23 February 2012

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We demonstrated a method to excite selected whispering gallery modes in optical bottle microresonators (BMR) by inscribing microgroove scars on their surface by focused ion beam milling. Substantial spectral clean-up is obtained in appropriately scarred BMRs, providing the potential for high performance sensors and other optical devices.
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42.79.-e Optical elements, devices, and systems
42.82.Cr Fabrication techniques; lithography, pattern transfer
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Nonvanishing turn-on delay in quantum dot lasers

G. S. Sokolovskii, V. V. Dudelev, E. D. Kolykhalova, A. G. Deryagin, M. V. Maximov, A. M. Nadtochiy, V. I. Kuchinskii, S. S. Mikhrin, D. A. Livshits, E. A. Viktorov, and T. Erneux

Appl. Phys. Lett. 100, 081109 (2012); http://dx.doi.org/10.1063/1.3688604 (3 pages)

Online Publication Date: 23 February 2012

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A turn-on of a quantum dot semiconductor laser is analyzed in detail both theoretically and experimentally. We show that quantum dot lasers have a nonlinear damping rate which strongly affects laser turn-on dynamics due to the non-instantaneous capture of carriers to a dot. It results in nonvanishing turn-on delay even at very high pumping in good agreement with experiment.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.65.-k Nonlinear optics

AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes

Dong Ju Chae, Dong Yoon Kim, Tae Geun Kim, Yun Mo Sung, and Moon Doeck Kim

Appl. Phys. Lett. 100, 081110 (2012); http://dx.doi.org/10.1063/1.3689765 (3 pages) | Cited 2 times

Online Publication Date: 23 February 2012

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In this paper, improved electrical and optical properties of aluminum gallium nitride (AlGaN)-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide (F-ITO) electrodes are reported. F-doping was found to increase the work function as well as the energy bandgap of the ITO and, thereby, reduce the Shottky barrier height in contact with p-(Al)GaN. As a result, the optical transmittance increased from 79.7% to 86.9% at 380 nm, while the specific contact resistance decreased from 1.04 × 10−3 Ω·cm2 to 9.12 × 10−4 Ω·cm2 after F-doping, which led to an increase in the output power from 2.41 mW to 5.99 mW.
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85.60.Jb Light-emitting devices
85.30.Kk Junction diodes

Tuning the nonlinear response of coupled split-ring resonators

Kirsty E. Hannam, David A. Powell, Ilya V. Shadrivov, and Yuri S. Kivshar

Appl. Phys. Lett. 100, 081111 (2012); http://dx.doi.org/10.1063/1.3689775 (3 pages)

Online Publication Date: 23 February 2012

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We introduce the concept of controlling the nonlinear response of the metamaterial by altering its internal structure. We experimentally demonstrate tuning of the nonlinear response of two coupled split-ring resonators by changing their mutual position. This effect is achieved through modification of the structure of the coupled resonant modes and their interaction with the incident field. By offsetting the resonators we control the maximum currents through the nonlinear elements, which affect the nonlinear response of the system.
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84.40.Az Waveguides, transmission lines, striplines

Controlling extraordinary transmission characteristics of metal hole arrays with spoof surface plasmons

Fumiaki Miyamaru, Mototsugu Kamijyo, Naoki Hanaoka, and Mitsuo W. Takeda

Appl. Phys. Lett. 100, 081112 (2012); http://dx.doi.org/10.1063/1.3689784 (4 pages) | Cited 3 times

Online Publication Date: 23 February 2012

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We experimentally controlled the spectral characteristics of the extraordinary transmissions observed in metal hole arrays by analogy with spoof surface plasmon-polaritons (spoof SPPs). We constructed doubly periodic metal hole arrays. The larger and smaller periodic holes are for inducing extraordinary transmissions and modifying the spoof SPPs’ characteristics, respectively. Introducing the smaller holes that surround the larger hole arrays can modify the dispersion curve of the surface waves excited on a structured metal surface analogous to the spoof SPP model, and consequently, the extraordinary transmission peak will show a redshift.
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78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Fm Birefringence
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