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20 Feb 2012

Volume 100, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 100, 082401 (2012); http://dx.doi.org/10.1063/1.3684972 (4 pages)

Elizabeth Rapoport and Geoffrey S. D. Beach
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Strong vortex pinning in FeSe0.5Te0.5 epitaxial thin film

E. Bellingeri, S. Kawale, I. Pallecchi, A. Gerbi, R. Buzio, V. Braccini, A. Palenzona, M. Putti, M. Adamo, E. Sarnelli, and C. Ferdeghini

Appl. Phys. Lett. 100, 082601 (2012); http://dx.doi.org/10.1063/1.3688918 (4 pages) | Cited 3 times

Online Publication Date: 22 February 2012

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We report on the magnetic field and angular dependence of the critical current density of epitaxial FeTe0.5Se0.5 thin films. The films exhibit high critical current values and weak dependence on the applied magnetic field. The Jc is larger for field parallel to the c-axis, which is the opposite behavior of what expected from the critical field anisotropy. The analysis of the activation energy for vortex motion indicates that the single pinning regime holds up to 9 T, suggesting that correlated pinning centers are more effective than the vortex-vortex interaction even at the largest applied fields. Scanning tunneling microscope analysis indicates threading dislocations as possible pinning centers.
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74.25.Wx Vortex pinning (includes mechanisms and flux creep)
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
74.25.Sv Critical currents
74.78.-w Superconducting films and low-dimensional structures
68.55.at Other materials

Reduced microwave loss in trenched superconducting coplanar waveguides

Michael R. Vissers, Jeffrey S. Kline, Jiansong Gao, David S. Wisbey, and David P. Pappas

Appl. Phys. Lett. 100, 082602 (2012); http://dx.doi.org/10.1063/1.3683552 (3 pages) | Cited 3 times

Online Publication Date: 24 February 2012

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Reducing the contribution of all sources of microwave loss is important for increasing coherence times in superconducting qubits. In this paper we investigate reducing the loss by systematically removing Si substrate material from the gap region in titanium nitride coplanar waveguides fabricated on intrinsic Si substrates. By exploiting the radial dependence of the etch rate in a parallel plate reactive ion etcher, otherwise identical coplanar waveguides with only the Si gaps etched to varying depth, i.e., trenched, were created in a single TiN film within a single processing step. Measurements at these multiple depths permit the study of the loss reduction in isolation to the unintentional effects caused by any single processing step. When comparing the loss from all trench depths we found that the high power loss was similar, but in the single photon limit the loss was reduced by a factor of two for deeper trenches in agreement with predictions from finite element analysis.
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85.25.-j Superconducting devices
84.40.Az Waveguides, transmission lines, striplines
02.70.Dh Finite-element and Galerkin methods
81.65.Cf Surface cleaning, etching, patterning
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