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27 Feb 2012

Volume 100, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 093101 (2012); http://dx.doi.org/10.1063/1.3687190 (4 pages)

Jinhai Mao, Li Huang, Yi Pan, Min Gao, Junfeng He, Haitao Zhou, Haiming Guo, Yuan Tian, Qiang Zou, Lizhi Zhang, Haigang Zhang, Yeliang Wang, Shixuan Du, Xingjiang Zhou, A. H. Castro Neto, et al.
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Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels

Ta-Chuan Liao, Tsung-Kuei Kang, Chia-Min Lin, Chun-Yu Wu, and Huang-Chung Cheng

Appl. Phys. Lett. 100, 093501 (2012); http://dx.doi.org/10.1063/1.3691184 (3 pages)

Online Publication Date: 28 February 2012

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In this letter, gate-all-around (GAA) polycrystalline silicon thin-film transistors (TFTs) with self-aligned grain-growth channels were fabricated using excimer laser crystallization (ELC) on a recessed-nanowire (RN) structure. Via the RN structure constructed by a simple sidewall-spacer formation, location-controlled nucleation and volume-confined lateral grain growth within the RN body during ELC process have been demonstrated with only one perpendicular grain boundary in each nanowire channel. Because of the high-crystallinity channel together with GAA operation mode, the proposed GAA-RN TFTs show good device integrity of lower threshold voltage, steeper subthreshold slope, and higher field-effect mobility as compared with the conventional planar counterparts.
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85.30.Tv Field effect devices
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
61.72.Mm Grain and twin boundaries

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

H. Takamizawa, Y. Shimizu, Y. Nozawa, T. Toyama, H. Morita, Y. Yabuuchi, M. Ogura, and Y. Nagai

Appl. Phys. Lett. 100, 093502 (2012); http://dx.doi.org/10.1063/1.3690864 (3 pages) | Cited 1 time

Online Publication Date: 29 February 2012

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Fin field-effect transistors are promising next-generation electronic devices, and the identification of dopant positions is important for their accurate characterization. We report atom probe tomography (APT) of silicon fin structures prepared by a recently developed self-regulatory plasma doping (SRPD) technique. Trenches between fin-arrays were filled using a low-energy focused ion beam to directly deposit silicon, which allowed the analysis of dopant distribution by APT near the surface of an actual fin transistor exposed to air. We directly demonstrate that SRPD can achieve a boron concentration above 1 × 1020 atoms/cm3 at the fin sidewall.
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85.30.Tv Field effect devices
85.40.Ry Impurity doping, diffusion and ion implantation technology
52.77.Dq Plasma-based ion implantation and deposition
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