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27 Feb 2012

Volume 100, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 100, 093101 (2012); http://dx.doi.org/10.1063/1.3687190 (4 pages)

Jinhai Mao, Li Huang, Yi Pan, Min Gao, Junfeng He, Haitao Zhou, Haiming Guo, Yuan Tian, Qiang Zou, Lizhi Zhang, Haigang Zhang, Yeliang Wang, Shixuan Du, Xingjiang Zhou, A. H. Castro Neto, et al.
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Efficiency enhancement of organic photovoltaics by addition of carbon nanotubes into both active and hole transport layer

Minas M. Stylianakis and Emmanuel Kymakis

Appl. Phys. Lett. 100, 093301 (2012); http://dx.doi.org/10.1063/1.3690056 (5 pages) | Cited 3 times

Online Publication Date: 27 February 2012

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We investigate the effect of the incorporation of single walled carbon nanotubes (SWNTs) into both the active layer and the hole transport layer (HTL) on bulk heterojunction organic photovoltaic devices. The overall efficiency gain for such a device is 40%, compared with the pristine device. The observed efficiency gain is attributed to a more efficient exciton dissociation due to the SWNTs presence in the photoactive layer and an overall enhanced hole transport and collection through the SWNTs percolation paths, which are extended in both the active layer and the HTL.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells
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A light emitting transistor based on a hybrid metal oxide-organic semiconductor lateral heterostructure

Zi-En Ooi, Thelese R. B. Foong, Samarendra P. Singh, Khai Leok Chan, and Ananth Dodabalapur

Appl. Phys. Lett. 100, 093302 (2012); http://dx.doi.org/10.1063/1.3689758 (3 pages) | Cited 1 time

Online Publication Date: 27 February 2012

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A light-emitting field-effect transistor was fabricated, with its architecture based on a distinct heterojunction located midway between the source and drain contacts. Tetracene enabled hole transport on one side of the heterojunction (hole mobility ∼0.071 cm2/Vs), while amorphous solution-processed zinc tin oxide supported electron transport on the other side (electron mobility ∼0.81 cm2/Vs). The drain current vs. gate voltage curves of this device have a bell-shaped profile that is characteristic of lateral heterojunction bipolar field-effect transistors. The green light emission—from tetracene—closely follows the trend in drain current and is naked-eye visible in a darkened room.
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85.30.Tv Field effect devices
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Highly enhanced charge injection in thienoacene-based organic field-effect transistors with chemically doped contact

Takeo Minari, Peter Darmawan, Chuan Liu, Yun Li, Yong Xu, and Kazuhito Tsukagoshi

Appl. Phys. Lett. 100, 093303 (2012); http://dx.doi.org/10.1063/1.3690949 (4 pages) | Cited 4 times

Online Publication Date: 29 February 2012

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We describe the mechanism of contact resistance reduction and improvement in device performance of organic field-effect transistors by chemical doping at the contact interface. Insertion of iron(III)trichloride into the contact interface significantly reduced the contact resistance from 200 to 8.8 kΩ cm at a gate voltage of −40 V, and a field-effect mobility of 7.0 cm2/V s was achieved in devices based on dioctylbenzothienobenzothiophene. The improved charge injection is attributable to a reduction in the depletion layer thickness at the contact interface and occupation of trap states in the access region due to the generation of charge carriers by contact doping.
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85.30.Tv Field effect devices
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In-situ conductivity and Seebeck measurements of highly efficient n-dopants in fullerene C60

Torben Menke, Debdutta Ray, Jan Meiss, Karl Leo, and Moritz Riede

Appl. Phys. Lett. 100, 093304 (2012); http://dx.doi.org/10.1063/1.3689778 (4 pages) | Cited 13 times

Online Publication Date: 29 February 2012

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We present two organic dimetal complexes Cr2(hpp)4 and W2(hpp)4 as n-dopants investigated in the model system of fullerene C60 for the application in organic electronic devices. Conductivity and Seebeck measurements on doped layers are carried out in vacuum at different doping concentrations and various substrate temperatures to compare the two dopants. Very high conductivities of up to 4 S/cm are achieved for both organic dopants. The thermal activation energy of the conductivity as well as the measured Seebeck coefficient are found to decrease with increasing doping concentration, indicating a shift of the Fermi level towards the electron transport level of the n-doped C60.
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72.20.Pa Thermoelectric and thermomagnetic effects
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
61.72.U- Doping and impurity implantation
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
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Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process

P. Cosseddu, S. Lai, M. Barbaro, and A. Bonfiglio

Appl. Phys. Lett. 100, 093305 (2012); http://dx.doi.org/10.1063/1.3691181 (5 pages) | Cited 3 times

Online Publication Date: 1 March 2012

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Organic thin film transistors have been fabricated on plastic substrates using a combination of two ultrathin insulating films, namely a 6 nm Al2O3 film (grown by UV-Ozone treatment of a pre-deposited aluminium film) and a 25 nm parylene C film deposited by vapour phase, as gate dielectric. They show a very low leakage current density, around 2 × 10−9 A/cm2, and, most importantly, can be operated at voltages below 1 V. We demonstrate that this low-cost technique is highly reproducible and represents a step forward for the routine fabrication of ultra-low voltage plastic electronics.
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85.30.Tv Field effect devices
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