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27 Feb 2012

Volume 100, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 100, 093101 (2012); http://dx.doi.org/10.1063/1.3687190 (4 pages)

Jinhai Mao, Li Huang, Yi Pan, Min Gao, Junfeng He, Haitao Zhou, Haiming Guo, Yuan Tian, Qiang Zou, Lizhi Zhang, Haigang Zhang, Yeliang Wang, Shixuan Du, Xingjiang Zhou, A. H. Castro Neto, et al.
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Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer

Lan Meng, Yanfeng Zhang, Wei Yan, Lei Feng, Lin He, Rui-Fen Dou, and Jia-Cai Nie

Appl. Phys. Lett. 100, 091601 (2012); http://dx.doi.org/10.1063/1.3691952 (4 pages) | Cited 5 times

Online Publication Date: 2 March 2012

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We report scanning tunneling microscopy and scanning tunneling spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ∼4.5°, the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 s). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously.
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73.63.-b Electronic transport in nanoscale materials and structures
61.48.Gh Structure of graphene
71.20.Tx Fullerenes and related materials; intercalation compounds
73.22.Pr Electronic structure of graphene
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