APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

3 Sep 2012

Volume 101, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 103101 (2012); http://dx.doi.org/10.1063/1.4748099 (5 pages)

Massimo Cuscunà, Annalisa Convertino, Emiliano Zampetti, Antonella Macagnano, Alessandro Pecora, Guglielmo Fortunato, Laura Felisari, Giuseppe Nicotra, Corrado Spinella, and Faustino Martelli
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires

Bahram Ganjipour, Martin Ek, B. Mattias Borg, Kimberly A. Dick, Mats-Erik Pistol, Lars-Erik Wernersson, and Claes Thelander

Appl. Phys. Lett. 101, 103501 (2012); http://dx.doi.org/10.1063/1.4749283 (4 pages) | Cited 2 times

Online Publication Date: 4 September 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5–7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (<3 nm) InAs shell improves p-type GaSb nanowire transistor characteristics.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

C. Y. Zhu, M. Wu, C. Kayis, F. Zhang, X. Li, R. A. Ferreyra, A. Matulionis, V. Avrutin, Ü. Özgür, and H. Morkoç

Appl. Phys. Lett. 101, 103502 (2012); http://dx.doi.org/10.1063/1.4751037 (4 pages)

Online Publication Date: 4 September 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In15.7%Al84.3%N/AlN/GaN heterojunction field effect transistors have been electrically stressed under four different bias conditions: on-state-low-field stress, reverse-gate-bias stress, off-state-high-field stress, and on-state-high-field stress, in an effort to elaborate on hot electron/phonon and thermal effects. DC current and phase noise have been measured before and after the stress. The possible locations of the failures as well as their influence on the electrical properties have been identified. The reverse-gate-bias stress causes trap generation around the gate area near the surface which has indirect influence on the channel. The off-state-high-field stress and the on-state-high-field stress induce deterioration of the channel, reduce drain current and increase phase noise. The channel degradation is ascribed to the hot-electron and hot-phonon effects.
Show PACS
85.30.Tv Field effect devices

Optically transparent glass micro-actuator fabricated by femtosecond laser exposure and chemical etching

Bo Lenssen and Yves Bellouard

Appl. Phys. Lett. 101, 103503 (2012); http://dx.doi.org/10.1063/1.4750236 (4 pages)

Online Publication Date: 5 September 2012

Full Text: Read Online (HTML) | Download PDF

multimedia

Show Abstract
Femtosecond laser manufacturing combined with chemical etching has recently emerged as a flexible platform for fabricating three-dimensional devices and integrated optical elements in glass substrates. Here, we demonstrate an optically transparent micro-actuator fabricated out of a single piece of fused silica. This work paves the road for further functional integration in glass substrate and optically transparent microsystems.
Show PACS
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.70.Ce Glasses, quartz
42.82.-m Integrated optics
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption

Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire

M. F. Gonzalez-Zalba, D. Heiss, G. Podd, and A. J. Ferguson

Appl. Phys. Lett. 101, 103504 (2012); http://dx.doi.org/10.1063/1.4750251 (4 pages)

Online Publication Date: 5 September 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the fabrication and electrical characterization of an electrostatically defined aluminum-gated SET on a lightly doped SOI etched nanowire based on MOSFET structures. The tunability of the device is achieved via two sets of electrically isolated aluminum surface gates. The results demonstrate a reproducible constant charging energy of 2 meV for a large range of gate voltages as well as tunable tunneling resistance. The controllable tunnel barriers permit transport spectroscopy of subthreshhold features.
Show PACS
85.35.Gv Single electron devices
85.30.Tv Field effect devices

Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures

Nitin Goyal, Benjamin Iñiguez, and Tor A. Fjeldly

Appl. Phys. Lett. 101, 103505 (2012); http://dx.doi.org/10.1063/1.4751859 (3 pages) | Cited 3 times

Online Publication Date: 6 September 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this paper, a physics based analytical model for the bare surface barrier height and two dimensional electron gas density in AlGaN/GaN heterostructures is presented. The model is based on simple charge neutrality electrostatics across the AlGaN barrier layer and that a low density of surface donor states is the source of the two dimensional electron gas. The model shows good agreement with reported experimental results.
Show PACS
73.20.Qt Electron solids
71.55.Eq III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

Jung-Kyu Lee, Sunghun Jung, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Il Hwan Cho, Hyuck-In Kwon, Chan Hyeong Park, Byung-Gook Park, and Jong-Ho Lee

Appl. Phys. Lett. 101, 103506 (2012); http://dx.doi.org/10.1063/1.4751248 (4 pages) | Cited 2 times

Online Publication Date: 6 September 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Resistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. Also, using the migration of oxygen ions depending on the polarity of the applied field, we propose the resistive-switching model of a double-layered RRAM to explain the unique resistive-switching characteristics.
Show PACS
84.30.Sk Pulse and digital circuits
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close