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10 Sep 2012

Volume 101, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 101, 113302 (2012); http://dx.doi.org/10.1063/1.4749791 (4 pages)

Chang-Hoon Shim, Shuzo Hirata, Juro Oshima, Tomohiko Edura, Reiji Hattori, and Chihaya Adachi
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Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin, Yuanjie Lv, Lingguo Meng, Yingxia Yu, Zhifang Cao, Hong Chen, and Zhanguo Wang

Appl. Phys. Lett. 101, 113501 (2012); http://dx.doi.org/10.1063/1.4752232 (4 pages)

Online Publication Date: 10 September 2012

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Using the measured capacitance-voltage curves of Ni Schottky contacts with different areas and the current-voltage characteristics for the circular and rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with the side-Ohmic contacts, it is found that the polarization Coulomb field scattering caused by the polarization charge density variation at the AlGaN/AlN/GaN interfaces is closely related to the Ohmic-contact processing, and the side-Ohmic contact processing greatly weakens the polarization Coulomb field scattering in the AlGaN/AlN/GaN HFETs.
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85.30.Tv Field effect devices

Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements

Sungsik Lee and Arokia Nathan

Appl. Phys. Lett. 101, 113502 (2012); http://dx.doi.org/10.1063/1.4751861 (5 pages) | Cited 2 times

Online Publication Date: 11 September 2012

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In this paper, we extract density of localized tail states from measurements of low temperature conductance in amorphous oxide transistors. At low temperatures, trap-limited conduction prevails, allowing extraction of the trapped carrier distribution with energy. Using a test device with a-InGaZnO channel layer, the extracted tail state energy and density at the conduction band minima are 20 meV and 2 × 1019 cm−3 eV−1, respectively, which are consistent with values reported in the literature. Also, the field-effect mobility as a function of temperature from 77 K to 300 K is retrieved for different gate voltages, yielding the activation energy and the percolation threshold.
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85.30.Tv Field effect devices

Switching dynamics and charge transport studies of resistive random access memory devices

Branden Long, Yibo Li, Saptarshi Mandal, Rashmi Jha, and Kevin Leedy

Appl. Phys. Lett. 101, 113503 (2012); http://dx.doi.org/10.1063/1.4749809 (5 pages) | Cited 1 time

Online Publication Date: 12 September 2012

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We report the switching dynamics and charge transport studies on Ru/HfO2/TiOx/Ru resistive random access memory devices in low resistance state (LRS), high resistance state (HRS), and virgin resistance state (VRS). The charge transport in LRS is governed by Ohmic conduction of electrons through local filamentary paths while it is governed by a combination of Frenkel-Poole emission and trap assisted tunneling process in HRS and VRS. The area of the filament in LRS is extracted and related to the compliance current. The thickness of the re-oxidized filament is extracted and related to the reset voltage in HRS. The energy consumed during the reset process was analyzed on the time-scale to experimentally demonstrate joule-heating mediated oxidation dynamics of filament during device reset.
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84.30.Sk Pulse and digital circuits

Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

Jae Gwang Um, Mallory Mativenga, Piero Migliorato, and Jin Jang

Appl. Phys. Lett. 101, 113504 (2012); http://dx.doi.org/10.1063/1.4751849 (4 pages) | Cited 3 times

Online Publication Date: 12 September 2012

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The evolution with time of interface trap density and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs), for negative-bias-under-illumination-stress (NBIS), is traced. Based on the combined analysis of TFT current-voltage and capacitance-voltage characteristics, position of Fermi energy, flat band voltage, interface trap density, and gap state density per unit energy are investigated as function of NBIS time and applied gate voltage. These key parameters help to identify the degradation phenomena responsible for the negative threshold voltage shift caused by NBIS. In particular, the interface trap density becomes more positive; from 0.03 × 1011/cm2 to 0.65 × 1011/cm2, while the gap trap density per unit energy also increases after NBIS, supporting defect creation in the bulk and build-up of positive charge at the gate insulator/active-layer interface as the mechanism responsible for NBIS instability.
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85.30.Tv Field effect devices

High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

Adrian Chasin, Soeren Steudel, Kris Myny, Manoj Nag, Tung-Huei Ke, Sarah Schols, Jan Genoe, Georges Gielen, and Paul Heremans

Appl. Phys. Lett. 101, 113505 (2012); http://dx.doi.org/10.1063/1.4752009 (5 pages)

Online Publication Date: 12 September 2012

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High-performance Schottky diodes based on palladium blocking contacts were fabricated upon depositing indium-gallium-zinc oxide (IGZO) with high oxygen content. We find that an oxygen treatment of the palladium contact is needed to achieve low off currents in the Schottky diode, and rationalize this by relating an increased oxygen content at the Pd/IGZO interface to a lower interfacial trap density. Optimized IGZO films were obtained with a record high ratio of free charge carrier density to subgap traps. The rectification ratios of diodes with such films are higher than 107 with current densities exceeding 103 A/cm2 at low forward bias of 2 V.
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85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices

Multipactor initiation on a dielectric window: Effect of finite geometry

A. G. Sazontov and N. K. Vdovicheva

Appl. Phys. Lett. 101, 113506 (2012); http://dx.doi.org/10.1063/1.4752457 (3 pages)

Online Publication Date: 13 September 2012

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This paper presents a statistical analysis of multipactor initiation on a transmission window with finite spatial length. It is found that the presence of the tangential electron motion along the window (under the action of RF electric field) can significantly alter the multipacting discharge cutoff conditions in comparison with the unbounded emission surface model: the decrease of the window wave size leads to the growth of the threshold of multipactor breakdown.
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77.22.Jp Dielectric breakdown and space-charge effects
02.50.-r Probability theory, stochastic processes, and statistics

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

Jaeyeong Heo, Sang Bok Kim, and Roy G. Gordon

Appl. Phys. Lett. 101, 113507 (2012); http://dx.doi.org/10.1063/1.4752727 (5 pages) | Cited 1 time

Online Publication Date: 14 September 2012

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Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 °C. The highest field effect mobility was ∼13 cm2/V·s with on-to-off ratios of drain current ∼109–1010. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel layers grown at 170 °C showed better transistor properties than those grown at 120 °C. Channels with higher zinc to tin ratio (∼3–4) also performed better than ones with lower ratios (∼1–3).
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85.30.Tv Field effect devices
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