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10 Sep 2012

Volume 101, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 113302 (2012); http://dx.doi.org/10.1063/1.4749791 (4 pages)

Chang-Hoon Shim, Shuzo Hirata, Juro Oshima, Tomohiko Edura, Reiji Hattori, and Chihaya Adachi
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Effects of lateral and substrate constraint on the piezoresponse of ferroelectric nanostructures

A. Bernal, A. Tselev, Sergei Kalinin, and Nazanin Bassiri-Gharb

Appl. Phys. Lett. 101, 112901 (2012); http://dx.doi.org/10.1063/1.4751343 (4 pages)

Online Publication Date: 10 September 2012

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The effects of lateral constraint and substrate clamping on piezoresponse of ferroelectric materials at small scale are quantitatively evaluated in PbZr0.52Ti0.48O3 nanotubes. Lateral clamping results in a reduction of the extrinsic contributions to the piezoresponse by almost an order of magnitude at low and intermediate fields. Similarly, at aspect ratios below 3:1 (height to width), constraint to the substrate leads to a drastic reduction of the extrinsic contributions to the piezoelectric response of the ferroelectric nanostructures. Both behaviors can be explained by an increased energy requirement for formation and motion of the ferroelastic non-180° domain walls in mechanically constrained systems.
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77.80.-e Ferroelectricity and antiferroelectricity
61.46.Fg Nanotubes
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
77.65.-j Piezoelectricity and electromechanical effects

Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

J. A. Caraveo-Frescas, H. Wang, U. Schwingenschlögl, and H. N. Alshareef

Appl. Phys. Lett. 101, 112902 (2012); http://dx.doi.org/10.1063/1.4747805 (4 pages) | Cited 1 time

Online Publication Date: 10 September 2012

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The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

The structural and piezoresponse properties of c-axis-oriented Aurivillius phase Bi5Ti3FeO15 thin films deposited by atomic vapor deposition

P. F. Zhang, N. Deepak, L. Keeney, M. E. Pemble, and R. W. Whatmore

Appl. Phys. Lett. 101, 112903 (2012); http://dx.doi.org/10.1063/1.4752007 (4 pages) | Cited 1 time

Online Publication Date: 11 September 2012

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The deposition by atomic vapor deposition of highly c-axis-oriented Aurivillius phase Bi5Ti3FeO15 (BTFO) thin films on (100) Si substrates is reported. Partially crystallized BTFO films with c-axis perpendicular to the substrate surface were first deposited at 610 °C (8% excess Bi), and subsequently annealed at 820 °C to get stoichiometric composition. After annealing, the films were highly c-axis-oriented, showing only (00l) peaks in x-ray diffraction (XRD), up to (0024). Transmission electron microscopy (TEM) confirms the BTFO film has a clear layered structure, and the bismuth oxide layer interleaves the four-block pseudoperovskite layer, indicating the n = 4 Aurivillius phase structure. Piezoresponse force microscopy measurements indicate strong in-plane piezoelectric response, consistent with the c-axis layered structure, shown by XRD and TEM.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.hn Other piezoelectric or electrostrictive films
81.40.Gh Other heat and thermomechanical treatments
61.66.Bi Elemental solids
61.66.Dk Alloys
68.55.aj Insulators

Defect mechanisms in high resistivity BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics

Natthaphon Raengthon, Victoria J. DeRose, Geoffrey L. Brennecka, and David P. Cann

Appl. Phys. Lett. 101, 112904 (2012); http://dx.doi.org/10.1063/1.4752452 (5 pages)

Online Publication Date: 13 September 2012

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The defect mechanisms that underpin the high energy density dielectric 0.8BaTiO3–0.2Bi(Zn1/2Ti1/2)O3 were investigated. Characterization of the nominally stoichiometric composition revealed the presence of a Ti3+-related defect center, which is correlated with lower resistivities and an electrically heterogeneous microstructure. In compositions with 2 mol. % Ba-deficiency, a barium vacancy-oxygen vacancy pair (VBa−VO), acted as an electron-trapping site. This defect was responsible for a significant change in the transport behavior with a high resistivity and an electrically homogeneous microstructure.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.jd Vacancies
61.72.-y Defects and impurities in crystals; microstructure
61.66.Bi Elemental solids
61.66.Dk Alloys
77.65.-j Piezoelectricity and electromechanical effects
77.84.Cg PZT ceramics and other titanates

Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

Jun Ge, Gang Pan, Denis Remiens, Ying Chen, Fei Cao, Xianlin Dong, and Genshui Wang

Appl. Phys. Lett. 101, 112905 (2012); http://dx.doi.org/10.1063/1.4752726 (3 pages) | Cited 4 times

Online Publication Date: 14 September 2012

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Antiferroelectric Pb(Zr, Nb, Ti)O3 (PZNT) films were deposited via a sol-gel process on Pt(111)/Ti/SiO2/Si, LaNiO3- and La0.5Sr0.5CoO3-buffered Si substrate. The scaling behavior of the energy density W of antiferroelectric films was investigated. The scaling behavior of W against frequency f of PZNT on LaNiO3-buffered Si takes the form of W ∝ f0.08, which differs significantly from that form of W ∝ f−0.14 of PZNT on La0.5Sr0.5CoO3-buffered Si. This indicates that the scaling relations of W vary substantially as bottom electrodes change and might be closely related to the variation of nonuniform strain field and depolarization field within the AFE films.
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77.55.hn Other piezoelectric or electrostrictive films
77.80.bj Scaling effects
77.84.Ek Niobates and tantalates

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

Tsung-Ming Tsai, Kuan-Chang Chang, Ting-Chang Chang, Yong-En Syu, Kuo-Hsiao Liao, Bae-Heng Tseng, and Simon M. Sze

Appl. Phys. Lett. 101, 112906 (2012); http://dx.doi.org/10.1063/1.4750235 (4 pages) | Cited 3 times

Online Publication Date: 14 September 2012

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The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiOx) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiOx film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.
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84.30.Sk Pulse and digital circuits
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