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10 Sep 2012

Volume 101, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 113302 (2012); http://dx.doi.org/10.1063/1.4749791 (4 pages)

Chang-Hoon Shim, Shuzo Hirata, Juro Oshima, Tomohiko Edura, Reiji Hattori, and Chihaya Adachi
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Magnetic force microscopy sensors providing in-plane and perpendicular sensitivity

T. Mühl, J. Körner, S. Philippi, C. F. Reiche, A. Leonhardt, and B. Büchner

Appl. Phys. Lett. 101, 112401 (2012); http://dx.doi.org/10.1063/1.4750058 (4 pages) | Cited 1 time

Online Publication Date: 10 September 2012

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We present a bimodal magnetic force microscopy sensor consisting of a conventional cantilever beam, a spacer element, and an iron-filled carbon nanotube. Depending on the mode of the cantilever's resonant flexural vibration, the sensor is sensitive to magnetic field derivatives parallel and perpendicular to the sample's surface. This multifunctionality is supported by the scalar-type behavior of the magnetic monopole-like end of the iron-filled carbon nanotube.
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07.79.Pk Magnetic force microscopes
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Magnetic field dependence of the spin relaxation length in spin light-emitting diodes

Henning Höpfner, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, Dirk Reuter, Andreas D. Wieck, Nils C. Gerhardt, and Martin R. Hofmann

Appl. Phys. Lett. 101, 112402 (2012); http://dx.doi.org/10.1063/1.4752162 (4 pages) | Cited 1 time

Online Publication Date: 10 September 2012

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We investigate the spin relaxation length during vertical electron transport in spin-light emitting diode devices as a function of magnetic field strength at room temperature. In most publications on spin relaxation in optoelectronic devices, strong magnetic fields are used to achieve perpendicular-to-plane magnetization of the spin injection contacts. We show experimentally that high magnetic field strengths significantly reduce spin relaxation during transport to the active region of the device. We obtain a spin relaxation length of 27(3) nm in magnetic remanence and at room temperature, which nearly doubles at 2 T magnetic field strength.
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85.60.Jb Light-emitting devices

Digital magnetic heterostructures based on GaN using GGA-1/2 approach

J. P. T. Santos, M. Marques, L. G. Ferreira, R. R. Pelá, and L. K. Teles

Appl. Phys. Lett. 101, 112403 (2012); http://dx.doi.org/10.1063/1.4751285 (5 pages)

Online Publication Date: 10 September 2012

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We present ab-initio calculations of seven digital magnetic heterostructures, GaN δ-doped with V, Cr, Mn, Fe, Co, Ni, and Cu, forming two-dimensional systems. Only GaN δ-doped with V or Cr present a ferromagnetic ground state with high Curie temperatures. For both, to better describe the electronic properties, we used the GGA-1/2 approach. The ground state of GaN/Cr resulted in a two dimensional half-metal, with 100% spin polarization. For GaN/V, we obtained an insulating state: integer magnetic moment of 2.0 μB, a minority spin gap of 3.0 eV close to the gap of GaN, but a majority spin gap of 0.34 eV.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.15.Qe Excited states: methodology

Thermalized ground state of artificial kagome spin ice building blocks

Unnar B. Arnalds, Alan Farhan, Rajesh V. Chopdekar, Vassilios Kapaklis, Ana Balan, Evangelos Th. Papaioannou, Martina Ahlberg, Frithjof Nolting, Laura J. Heyderman, and Björgvin Hjörvarsson

Appl. Phys. Lett. 101, 112404 (2012); http://dx.doi.org/10.1063/1.4751844 (4 pages) | Cited 4 times

Online Publication Date: 11 September 2012

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We present a direct magnetic imaging study on the thermal macrospin ordering of artificial kagome spin ice building blocks. Using photoemission electron microscopy, employing x-ray magnetic circular dichroism, we are able to resolve the single domain magnetic nature of the macrospins and determine the states of the combined building block structures. The nano-patterning and material selection allows thermally activated magnetization reversal for the macrospins to occur. The ordering of the macrospins is dominated by the ground state, consistent with a thermal ground state ordering. This work paves the way for the realization of extended artificial spin ice structures exhibiting experimentally accessible thermal behavior.
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75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
79.60.-i Photoemission and photoelectron spectra
78.20.Ls Magneto-optical effects
75.60.Ch Domain walls and domain structure
75.60.Jk Magnetization reversal mechanisms

Giant coercivity in perpendicularly magnetized cobalt monolayer

D. C. Lin, C. Song, B. Cui, Y. Y. Wang, G. Y. Wang, and F. Pan

Appl. Phys. Lett. 101, 112405 (2012); http://dx.doi.org/10.1063/1.4752446 (4 pages)

Online Publication Date: 11 September 2012

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We report giant coercivity (HC) up to 35 kOe at 4 K, measured by the anomalous Hall effect, in perpendicularly magnetized Co (∼0.3 nm) films, where Co is approximately one monolayer. The HC is dramatically reduced with huge applied current, due to Joule heating rather than Rashba effect. It is also sensitive to temperatures, producing almost zero HC at 200 K. The Curie temperature of the Co monolayer is ∼275 K, far lower than that of bulk Co. The giant HC could be explained by the strong interaction at Co/Pd interface, providing a promising paradise: one monolayer, one permanent magnet.
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75.70.Ak Magnetic properties of monolayers and thin films
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
81.40.Gh Other heat and thermomechanical treatments
75.50.Vv High coercivity materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Fabricating high-density magnetic storage elements by low-dose ion beam irradiation

R. Neb, T. Sebastian, P. Pirro, B. Hillebrands, S. Pofahl, R. Schäfer, and B. Reuscher

Appl. Phys. Lett. 101, 112406 (2012); http://dx.doi.org/10.1063/1.4752447 (4 pages) | Cited 2 times

Online Publication Date: 14 September 2012

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We fabricate magnetic storage elements by irradiating an antiferromagnetically coupled ferromagnetic/nonmagnetic/ferromagnetic trilayer by a low-dose ion beam. The irradiated areas become ferromagnetically coupled and are capable of storing information if their size is small enough. We employ Fe/Cr/Fe trilayers and a 30 keV focused Ga+-ion beam to demonstrate the working principle for a storage array with a bit density of 7  Gbit/in.2. Micromagnetic simulations suggest that bit densities of at least two magnitudes of order larger should be possible.
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61.80.Jh Ion radiation effects
75.50.Ee Antiferromagnetics
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
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