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10 Sep 2012

Volume 101, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 101, 113302 (2012); http://dx.doi.org/10.1063/1.4749791 (4 pages)

Chang-Hoon Shim, Shuzo Hirata, Juro Oshima, Tomohiko Edura, Reiji Hattori, and Chihaya Adachi
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P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process

M. A. Myers, M. T. Myers, M. J. General, J. H. Lee, L. Shao, and H. Wang

Appl. Phys. Lett. 101, 112101 (2012); http://dx.doi.org/10.1063/1.4751467 (5 pages) | Cited 1 time

Online Publication Date: 10 September 2012

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ZnO thin films were grown on sapphire (0001) substrates by pulsed-laser deposition at 700 °C. 70 keV N+ ion implantation was performed under various temperatures and fluences in the range of 300−460 °C and 3.0×1014−1.2×1015 cm−2, respectively. Hall measurements indicate that the ZnO films implanted at 460 °C are p-type for all fluences used herein. Hole-carrier concentrations lie in the range of 2.4×1016−5.2×1017 cm−3, hole mobilities in the range of 0.7−3.7 cm2 V−1 s−1, and resistivities between 18−71 Ωcm. Transmission-electron microscopy reveals major microstructural differences between the n-type and p-type films. Ion implantation at elevated temperatures is shown to be an effective method to introduce increased concentrations of p-type N dopants while reducing the amount of stable post-implantation disorder.
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73.61.Ga II-VI semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.20.My Galvanomagnetic and other magnetotransport effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Fg Pulsed laser ablation deposition
81.40.Gh Other heat and thermomechanical treatments

Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers

Yan-Ling Hu, Stephan Krämer, Paul T. Fini, and James S. Speck

Appl. Phys. Lett. 101, 112102 (2012); http://dx.doi.org/10.1063/1.4750238 (4 pages)

Online Publication Date: 10 September 2012

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In this study, a-plane GaN was grown on r-plane sapphire by sidewall lateral epitaxial overgrowth. Prismatic stacking faults (PSFs) in the window region of the GaN layer were identified to have an atomic configuration similar to the model presented by Northrup [Appl. Phys. Lett. 72, 2316 (1998)], which was demonstrated by comparing high-angle annular dark-field scanning transmission electron microscopy images with the atomic configurations of the Drum model, the Amelinckx model, and simplified Northrup model, respectively. The Northrup PSF structure has been further confirmed by the scattering contrast analysis in transmission electron microscopy experiments.
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68.55.ag Semiconductors
61.72.Nn Stacking faults and other planar or extended defects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Irradiation induced modification in transport properties of LaNiO3 thin films: An x-ray absorption study

Yogesh Kumar, Abhinav Pratap Singh, S. K. Sharma, R. J. Choudhary, P. Thakur, M. Knobel, N. B. Brookes, and Ravi Kumar

Appl. Phys. Lett. 101, 112103 (2012); http://dx.doi.org/10.1063/1.4752005 (4 pages)

Online Publication Date: 11 September 2012

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Highly c-axis oriented LaNiO3 thin films are grown on LaAlO3 (001) single crystal substrates using rf-magnetron sputtering. Swift heavy ion irradiation induced variations in structural and electrical transport properties of deposited films are studied. Pristine film shows unusual insulating character while the irradiated film exhibits metallic behaviour. X-ray diffraction study indicates that irradiation improves the crystalline character of films while retaining the oriented single phase growth. Electronic structure measurements performed using x-ray absorption spectroscopy at O K, La M5,4, and Ni L3,2-edges reveal that Ni-O hybridization-controlled localization of charge carriers is responsible for the observed transport behaviour.
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73.61.Ng Insulators
78.70.Dm X-ray absorption spectra
68.55.aj Insulators
61.80.Jh Ion radiation effects
81.15.Cd Deposition by sputtering

Comparative study of solution-processed carbon nanotube network transistors

Sung-Jin Choi, Chuan Wang, Cheuk Chi Lo, Patrick Bennett, Ali Javey, and Jeffrey Bokor

Appl. Phys. Lett. 101, 112104 (2012); http://dx.doi.org/10.1063/1.4752006 (4 pages) | Cited 2 times

Online Publication Date: 11 September 2012

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Carbon nanotube networks in thin-film type transistors were studied experimentally, comparing the use of pre-separated semiconducting enriched nanotubes (90% and 99% purity) to examine how topology affects the properties of the devices. Measurements are reported for two deposition methods used for network formation: random and spin-aligned deposition methods. The results show that the thin-film transistors fabricated via spin-aligned deposition demonstrate better electrical uniformity and performance than those produced by the random network deposition method. Our results imply that coverage and alignment are strongly correlated with the properties of the devices and should therefore be simultaneously optimized for improved electrical uniformity and performance.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices

Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

Rong Xuan, Wei-Hong Kuo, Chih-Wei Hu, Suh-Fang Lin, and Jenn-Fang Chen

Appl. Phys. Lett. 101, 112105 (2012); http://dx.doi.org/10.1063/1.4752113 (3 pages)

Online Publication Date: 12 September 2012

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This paper presents an approach in fabricating normally off AlGaN/GaN high electron mobility transistors (HEMTs). The fabrication technique was based on the carbon-doped GaN epitaxy layers on silicon substrate and the nano rod structure of the gate region in AlGaN/GaN HEMTs. Using this method, the threshold voltage of AlGaN/GaN HEMTs can be shifted from −2 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 2 V in an enhancement-mode (E-mode) AlGaN/GaN HEMT.
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85.30.Tv Field effect devices

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Y. Zhu, N. Jain, D. K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, A. K. Liu, and M. K. Hudait

Appl. Phys. Lett. 101, 112106 (2012); http://dx.doi.org/10.1063/1.4752115 (4 pages) | Cited 2 times

Online Publication Date: 12 September 2012

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The structural properties and band offset determination of p-channel staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to “virtual substrate.” Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In0.7Ga0.3As/GaAs0.35Sb0.65 heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 ± 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
71.20.Nr Semiconductor compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit

Jeehwan Kim, Stephen W. Bedell, and Devendra K. Sadana

Appl. Phys. Lett. 101, 112107 (2012); http://dx.doi.org/10.1063/1.4751845 (3 pages)

Online Publication Date: 14 September 2012

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Full activation of n-type dopant in germanium (Ge) reaching to its solid solubility has never been achieved by using ion implantation doping technique. This is because implantation of dopants always leaves defects such as vacancy and interstitials in the Ge crystal. While implantation-induced defects are electrically neutral for the most of semiconductor materials, they are electrically positive for Ge resulting in compensation of n-type dopants. In this Letter, we verified that 5 × 1019 P/cm3 is the maximum active concentration, which can be fully activated in germanium “without leaving implantation damage” per implantation/annealing cycle. The repetition of implantation and annealing of phosphorous (P) with the concentration of 5 × 1019 cm−3 leads to the activation of 1 × 1020 P/cm3 close to its solid solubility limit of 2 × 1020 P/cm3.
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61.72.uf Ge and Si
61.72.jd Vacancies
61.72.jj Interstitials
64.75.Bc Solubility

Degradation and passivation of CuInSe2

David Regesch, Levent Gütay, Jes K. Larsen, Valérie Deprédurand, Daisuke Tanaka, Yasuhiro Aida, and Susanne Siebentritt

Appl. Phys. Lett. 101, 112108 (2012); http://dx.doi.org/10.1063/1.4752165 (4 pages) | Cited 1 time

Online Publication Date: 14 September 2012

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The degradation of CuInSe2 absorbers in ambient air is observed by the decay of the quasi-Fermi level splitting under well defined illumination with time. The decay is faster and stronger in absorbers with [Cu]/[In]<1 than in ones with a higher ratio. It can be attributed to the oxidation of the sample. Epitaxial films containing no Na show very similar trends, indicating that decay and oxidation are independent of the Na content. A standard CdS layer commonly used as buffer in solar cells, terminates the decay even over many months. Aged absorbers can be completely restored by a KCN etch.
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68.55.ag Semiconductors
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
81.05.Hd Other semiconductors
81.65.Rv Passivation
81.65.Mq Oxidation
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