APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

17 Sep 2012

Volume 101, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 123901 (2012); http://dx.doi.org/10.1063/1.4751469 (4 pages)

Chin-An Lin, K. P. Huang, S. T. Ho, Mei-Wen Huang, and Jr-Hau He
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

An energy-harvesting scheme utilizing Ga-rich CuIn(1−x)GaxSe2 quantum dots for dye-sensitized solar cells

Chin-An Lin, K. P. Huang, S. T. Ho, Mei-Wen Huang, and Jr-Hau He

Appl. Phys. Lett. 101, 123901 (2012); http://dx.doi.org/10.1063/1.4751469 (4 pages)

Online Publication Date: 17 September 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ga-rich CuIn(1−x)GaxSe2 (CIGS) quantum dots (QDs) with a wide bandgap of 1.58 eV were utilized in dye-sensitized solar cells for energy harvesting. Ga-rich CIGS QDs at TiO2 photoanodes afford the recombination reduction and thus suppress the dark current, leading to the increase of short-circuit current from 14.47 to 15.27 mA·cm−2 and open-circuit voltage from 751 to 762 mV. This is due to well-adjusted conduction band minimum of Ga-rich CIGS QDs between that of TiO2 and excited state oxidation potential of N719, enhancing the photoelectron collection and suppressing electron back-transfer from TiO2 to oxidized redox species in the electrolyte.
Show PACS
88.40.hj Efficiency and performance of solar cells
88.40.J- Types of solar cells

Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells

S. Lombardo, C. Tringali, G. Cannella, A. Battaglia, M. Foti, N. Costa, F. Principato, and C. Gerardi

Appl. Phys. Lett. 101, 123902 (2012); http://dx.doi.org/10.1063/1.4753936 (4 pages) | Cited 1 time

Online Publication Date: 17 September 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions, improvements of ≈10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface.
Show PACS
68.55.-a Thin film structure and morphology
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.22.Lp Collective excitations
81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys

Multi-resonant energy harvester exploiting high-mode resonances frequency down-shifted by a flexible body beam

Min-Ho Seo, Dong-Hoon Choi, In-Ho Kim, Hyung-Jo Jung, and Jun-Bo Yoon

Appl. Phys. Lett. 101, 123903 (2012); http://dx.doi.org/10.1063/1.4754147 (4 pages)

Online Publication Date: 20 September 2012

Full Text: Read Online (HTML) | Download PDF


See Also: Publisher's Note

Show Abstract
We describe a mechanical vibration-based energy harvester deploying a flexible body beam to lower the spring constant of the device so that high-mode resonant frequencies are shifted down into a useable frequency range under natural environmental conditions. Whereas conventional cantilevers feature a single resonant frequency within this range, the proposed device generates multiple high-mode resonant frequencies in close proximity to form a wider operational bandwidth that is over 400% wider than that of conventional cantilever-type energy harvesters.
Show PACS
84.60.-h Direct energy conversion and storage

Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells

M. Fehr, P. Simon, T. Sontheimer, C. Leendertz, B. Gorka, A. Schnegg, B. Rech, and K. Lips

Appl. Phys. Lett. 101, 123904 (2012); http://dx.doi.org/10.1063/1.4754609 (4 pages) | Cited 1 time

Online Publication Date: 21 September 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Employing quantitative electron-paramagnetic resonance analysis and numerical simulations, we investigate the performance of thin-film polycrystalline silicon solar cells as a function of defect density. We find that the open-circuit voltage is correlated to the density of defects, which we assign to coordination defects at grain boundaries and in dislocation cores. Numerical device simulations confirm the observed correlation and indicate that the device performance is limited by deep defects in the absorber bulk. Analyzing the defect density as a function of grain size indicates a high concentration of intra-grain defects. For large grains (>2 μm), we find that intra-grain defects dominate over grain boundary defects and limit the solar cell performance.
Show PACS
88.40.jj Silicon solar cells
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close