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17 Sep 2012

Volume 101, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 101, 123901 (2012); http://dx.doi.org/10.1063/1.4751469 (4 pages)

Chin-An Lin, K. P. Huang, S. T. Ho, Mei-Wen Huang, and Jr-Hau He
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Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

E. X. Zhang, A. K. M. Newaz, B. Wang, C. X. Zhang, D. M. Fleetwood, K. I. Bolotin, R. D. Schrimpf, S. T. Pantelides, and M. L. Alles

Appl. Phys. Lett. 101, 121601 (2012); http://dx.doi.org/10.1063/1.4753817 (3 pages) | Cited 1 time

Online Publication Date: 17 September 2012

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We employ resistance measurements and Raman spectroscopy to investigate the effects of UV ozone (UVO) exposure and Ar annealing on graphene-on-SiO2 transistors. Shorter UVO exposures lead to oxygen adsorption and doping; longer exposures lead to significant defect generation and then to etching. Elevated-temperature Ar annealing following UVO exposure leads to local defect healing, as shown by the evolution of the characteristic Raman D- and G-peaks. In striking contrast, the overall graphene transistor resistance increases significantly due to void formation. Density functional calculations show that carbon-oxygen reactions lead to efficient consumption and release of C atoms (as CO or CO2) under conditions of high surface oxygen concentration.
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85.30.De Semiconductor-device characterization, design, and modeling

In situ control of As dimer orientation on Ge(100) surfaces

Sebastian Brückner, Oliver Supplie, Enrique Barrigón, Johannes Luczak, Peter Kleinschmidt, Ignacio Rey-Stolle, Henning Döscher, and Thomas Hannappel

Appl. Phys. Lett. 101, 121602 (2012); http://dx.doi.org/10.1063/1.4754122 (4 pages) | Cited 1 time

Online Publication Date: 19 September 2012

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We investigated the preparation of single domain Ge(100):As surfaces in a metal-organic vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) of vicinal substrates change when arsenic is supplied either by tertiarybutylarsine or by background As4 during annealing. Low energy electron diffraction shows mutually perpendicular orientations of dimers, scanning tunneling microscopy reveals distinct differences in the step structure, and x-ray photoelectron spectroscopy confirms differences in the As coverage of the Ge(100):As samples. Their RAS signals consist of contributions related to As dimer orientation and to step structure, enabling precise in situ control over preparation of single domain Ge(100):As surfaces.
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68.55.ag Semiconductors
61.72.Cc Kinetics of defect formation and annealing
68.47.Fg Semiconductor surfaces
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Robust hydrophobic Fe-based amorphous coating by thermal spraying

C. Zhang, Y. Wu, and L. Liu

Appl. Phys. Lett. 101, 121603 (2012); http://dx.doi.org/10.1063/1.4754140 (4 pages)

Online Publication Date: 20 September 2012

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Metallic surface is intrinsically hydrophilic due to its high surface energy. In this work, we present a different picture that highly hydrophobic metallic coatings could be directly fabricated by thermal spraying of Fe-based amorphous powders through the surface roughness control. These hydrophobic coatings are amorphous, exhibiting super-high hardness and excellent corrosion resistance. With low surface energy modification, the coatings become superhydrophobic and exhibit clearly self-cleaning effect. The present work opens a window for the applications of the amorphous coatings.
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81.65.Cf Surface cleaning, etching, patterning
61.43.Fs Glasses
62.20.Qp Friction, tribology, and hardness
68.35.Gy Mechanical properties; surface strains
68.35.Md Surface thermodynamics, surface energies
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
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