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24 Sep 2012

Volume 101, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 133101 (2012); http://dx.doi.org/10.1063/1.4752467 (5 pages)

Yen Husn Su and Wei-Yu Chen
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Nondestructive measurement of the minority carrier diffusion length in InP/InGaAs/InP double heterostructures

A. Zemel, U. Mizrahi, and T. Fishman

Appl. Phys. Lett. 101, 133501 (2012); http://dx.doi.org/10.1063/1.4754567 (3 pages)

Online Publication Date: 24 September 2012

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The present work demonstrates a simple nondestructive method for the measurement of the minority carrier diffusion length in InP/InGaAs/InP heterostructures. In this measurement technique, a beam of helium-neon laser is applied on the 1 μm-thick InP cap layer of the InP/InGaAs/InP heterostructure, and the resulted InGaAs photoluminescence image is detected by an InGaAs focal plane array. The values of the minority carrier diffusion length which were deduced from the image scans will be presented and discussed. With a further work, this technique could become a useful tool for the selection of InP/InGaAs/InP layered structures prior to the fabrication of InGaAs detectors.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy

Ultra-highly sensitive surface-corrugated microfiber Bragg grating force sensor

Wei Luo, Jun-long Kou, Ye Chen, Fei Xu, and Yan-qing Lu

Appl. Phys. Lett. 101, 133502 (2012); http://dx.doi.org/10.1063/1.4754838 (4 pages)

Online Publication Date: 25 September 2012

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We experimentally demonstrate a microfiber Bragg grating force sensor with ultra-high sensitivity. The fiber Bragg grating (FBG) is inscribed in a microfiber tapered from standard non-photosensitive single-mode fiber by focused ion beam machining method, and has a compact size (∼112 μm in length). Small diameter increases the force sensitivity of such grating when acting as a force-sensing element under tensile loads. We have demonstrated force sensitivity as high as ∼3146 nm/N around the resonant wavelength of 1538 nm, which is three orders of magnitude larger than FBGs in untapered fibers.
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42.81.Pa Sensors, gyros
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.Dj Gratings

Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure

L. Liu, J. P. Xu, F. Ji, J. X. Chen, and P. T. Lai

Appl. Phys. Lett. 101, 133503 (2012); http://dx.doi.org/10.1063/1.4754830 (4 pages) | Cited 1 time

Online Publication Date: 27 September 2012

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A TiON/HfON dual charge storage layer (CSL) with tapered bandgap structure is proposed for metal-oxide–nitride-oxide–silicon-type memory by using the inter-diffusion of Ti and Hf atoms near the TiON/HfON interface to form an intermixing layer of HfxTiyON with varying Hf/Ti ratio in the dual CSL during post-deposition annealing, as confirmed by transmission electron microscopy. The memory capacitor with TiON/HfON as dual-CSL shows a large memory window of 5.0 V at ±12 V for 100 μs, improved cycling endurance with little degradation after 105 cycles and good data retention with an extrapolated 10-yr window of 4.6 V at room temperature. These are highly associated with the tapered bandgap structure and appropriate trap distribution in the dual CSL. Therefore, the TiON/HfON dual-CSL structure provides a very promising solution for future charge-trapping memory applications.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.30.Sk Pulse and digital circuits
84.32.Tt Capacitors
61.72.Cc Kinetics of defect formation and annealing
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation

Subthreshold swings below 60 mV/dec in three-terminal nanojunctions at room temperature

C. R. Müller, L. Worschech, and A. Forchel

Appl. Phys. Lett. 101, 133504 (2012); http://dx.doi.org/10.1063/1.4754850 (4 pages)

Online Publication Date: 27 September 2012

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Subthreshold swings below the thermal limit of 60 mV/dec are demonstrated in a three-terminal nanojunction (TTJ) at room temperature. The T-shaped TTJ with a 50 nm wide center branch was based on a modulation-doped GaAs/AlGaAs heterostructure and was defined by electron-beam lithography and wet chemical etching. Operated as in-plane gated field-effect transistor, transistor characteristics were demonstrated. Efficient switching with subthreshold swings smaller than 40 mV/dec was observed. These findings are attributed to a dynamic gate capacitance which improves the switching properties of the device significantly.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

Wen-Hung Lo, Ting-Chang Chang, Jyun-Yu Tsai, Chih-Hao Dai, Ching-En Chen, Szu-Han Ho, Hua-Mao Chen, Osbert Cheng, and Cheng-Tung Huang

Appl. Phys. Lett. 101, 133505 (2012); http://dx.doi.org/10.1063/1.4752456 (4 pages)

Online Publication Date: 27 September 2012

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This Letter studies positive bias stress-induced abnormal interface state on TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors. It can be found that the degradation is associated with electron trapping, resulting in Vth shift but without subthreshold slope degradation. However, charge pumping current (ICP) shows a significant degradation after stress. Accordingly, the impact ionization-induced Nit located HfO2/SiO2 is proposed to demonstrate the ICP degradation. The AC stress with several frequencies is used to evidence the occurrence of impact ionization. Further, the device with additional pre-existing Nit located SiO2/Si has insignificant degradation due to reduction in stress electric field.
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85.30.Tv Field effect devices

Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3 interface

J. Sun, C. H. Jia, G. Q. Li, and W. F. Zhang

Appl. Phys. Lett. 101, 133506 (2012); http://dx.doi.org/10.1063/1.4755842 (4 pages)

Online Publication Date: 27 September 2012

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The resistive switching behaviors of indium (In)/Nb:SrTiO3 (NSTO) with different metal/semiconductor contacts are investigated. The In electrodes with the Schottky contacts are fabricated on NSTO surface using direct current reactive magnetron sputtering, and the fresh In is directly pressed to form the Ohmic contact. The device with one Schottky barrier displays a normal bipolar resistive switching (BRS) behavior, while the device with two Schottky barriers shows an abnormal BRS behavior. The results demonstrate that the injection and trapping or detrapping of carriers near the interface between the metal electrode and semiconductor are closely related to the resistive switching performance.
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73.40.Ns Metal-nonmetal contacts
81.15.Cd Deposition by sputtering
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.60.+g Mixed conductivity and conductivity transitions
73.30.+y Surface double layers, Schottky barriers, and work functions

Self-excited chaotic dynamics of a nonlinear thermo-visco-elastic system that is subject to laser irradiation

E. Hollander and O. Gottlieb

Appl. Phys. Lett. 101, 133507 (2012); http://dx.doi.org/10.1063/1.4755844 (5 pages)

Online Publication Date: 27 September 2012

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We derive and investigate a continuum mechanics based low-order dynamical system for a nonlinear thermo-visco-elastic cantilever that is subject to laser irradiation. The model consists of a Fabry–Pérot interferometer where heat transfer between cantilever layers creates a photothermal effect that triggers self-excited oscillations. Model validation is demonstrated by comparison of results to those of a benchmark experiment [K. Hane and K. Suzuki, Sens. Actuators, A 51, 179–182 (1996)] that exhibited periodic oscillations near a subcritical Hopf bifurcation. A numerical analysis reveals a dense chaotic bifurcation structure foliated by multiple periodic solutions. This analysis of a validated continuum based model culminates with a photothermal strange attractor where radiation pressure is negligible.
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46.15.-x Computational methods in continuum mechanics
42.60.-v Laser optical systems: design and operation
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