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24 Sep 2012

Volume 101, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 101, 133101 (2012); http://dx.doi.org/10.1063/1.4752467 (5 pages)

Yen Husn Su and Wei-Yu Chen
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Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Li-Feng Teng, Po-Tsun Liu, Yuan-Jou Lo, and Yao-Jen Lee

Appl. Phys. Lett. 101, 132901 (2012); http://dx.doi.org/10.1063/1.4754627 (4 pages) | Cited 1 time

Online Publication Date: 24 September 2012

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By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5 cm2/Vs, threshold voltage of 3.28 V, and subthreshold swing of 0.43 V/decade. This TFT performance with microwave annealing of 100 s is well competitive with its counterpart with furnace annealing at 450 °C for 1 h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing.
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85.30.Tv Field effect devices
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates

Zhiguang Wang, Yanxi Li, Bo Chen, Ravindranath Viswan, Jie-Fang Li, and D. Viehland

Appl. Phys. Lett. 101, 132902 (2012); http://dx.doi.org/10.1063/1.4754713 (4 pages)

Online Publication Date: 24 September 2012

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We deposited NaNbO3 (NNO)-Nb2O5 (NO) self-assembled heterostructures on LaAlO3 (LAO) to form ferroelectric-semiconductor vertically integrated nanostructures. The NNO component formed as nanorods embedded in a NO matrix. X-ray diffraction confirmed epitaxial growth of both NNO and NO phases. Phase distribution was detected by scanning electron microscopy. The NNO/NO volume ratio was strongly dependent on the deposition temperature due to the volatility of sodium. Piezoelectric force microscopy revealed a good piezoelectric response in the NNO component with a piezoelectric coefficient of D33 ≈ 12 pm/V, with SrRuO3 (SRO) acting as bottom electrode. The current-voltage characterization of NNO-NO/SRO-LAO showed a typical diode rectifying behavior.
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81.16.Dn Self-assembly
77.84.Ek Niobates and tantalates
73.40.Ei Rectification
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.65.-j Piezoelectricity and electromechanical effects
77.80.-e Ferroelectricity and antiferroelectricity

Giant electrocaloric effect in ferroelectric poly(vinylidenefluoride-trifluoroethylene) copolymers near a first-order ferroelectric transition

Xinyu Li, Xiao-Shi Qian, Haiming Gu, Xiangzhong Chen, S. G. Lu, Minren Lin, Fred Bateman, and Q. M. Zhang

Appl. Phys. Lett. 101, 132903 (2012); http://dx.doi.org/10.1063/1.4756697 (4 pages) | Cited 4 times

Online Publication Date: 26 September 2012

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We present directly measured electrocaloric effect (ECE) from the poly(vinylidenefluoride-trifluoroethylene) 65/35 mol. % copolymer. The data reveal a large difference in the ECE between that measured in applying and in removing the electric field. The difference is significantly reduced by modifying the copolymer with 20 Mrad of high energy electron irradiation. Moreover, an isothermal entropy change ΔSint = 160 J kg−1 K−1 and an adiabatic temperature change ΔTint = 35 °C can be induced in the irradiated copolymer. These results demonstrate the promise of achieving a significant ECE in ferroelectric polymers near first-order ferroelectric-paraelectric transition where multiple intermediate phases can exist.
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77.70.+a Pyroelectric and electrocaloric effects
77.80.B- Phase transitions and Curie point

Phase transitions and domain evolution in (Pb, La)(Zr, Sn, Ti)O3 single crystal

Yuanyuan Li, Qiang Li, Qingfeng Yan, Yiling Zhang, Xiaoqing Xi, Xiangcheng Chu, and Wenwu Cao

Appl. Phys. Lett. 101, 132904 (2012); http://dx.doi.org/10.1063/1.4755759 (4 pages)

Online Publication Date: 27 September 2012

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Antiferroelectric (Pb, La)(Zr, Sn, Ti)O3 (PLZST) single crystal has been grown and characterized. From dielectric measurements, x-ray diffraction analysis, and in situ observation of domain structures, we found two first-order phase transitions during heating from room temperature to 250 °C: orthorhombic (O) → rhombohedral (R) → cubic. Coexistence of O and R phases, with the R phase region strongly restricted inside the O phase matrix, has been observed within a broad temperature range above 123 °C. In addition, much denser domain walls appeared in the PLZST crystal when the O-R transition takes place.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Gh Other heat and thermomechanical treatments
64.70.K- Solid-solid transitions
77.80.B- Phase transitions and Curie point
61.66.Fn Inorganic compounds
77.80.Dj Domain structure; hysteresis

Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism

E. Mikheev, I. Stolichnov, A. K. Tagantsev, and N. Setter

Appl. Phys. Lett. 101, 132905 (2012); http://dx.doi.org/10.1063/1.4754146 (4 pages)

Online Publication Date: 27 September 2012

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Charge compensation at the interface is a fundamental phenomenon determining the operation conditions of thin-film devices incorporating ferroelectrics. The underlying mechanisms have been thoroughly addressed in perovskite ferroelectrics where the charge compensation originates from injection through the interface-adjacent layer. Here, we demonstrate that polarization screening in the polymer ferroelectric polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) films can be dominated by charge injection through the bulk, unlike ferroelectric oxides. The experimental evidence relies on polarization imprint under applied field and time-dependence of the dielectric constant. A linearized electrostatic model correctly accounts for the observed trends and links their occurrence to the unique properties of P(VDF-TrFE).
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

The intrinsic electrical breakdown strength of insulators from first principles

Y. Sun, S. A. Boggs, and R. Ramprasad

Appl. Phys. Lett. 101, 132906 (2012); http://dx.doi.org/10.1063/1.4755841 (5 pages)

Online Publication Date: 27 September 2012

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A first principles quantum-mechanical method for estimating intrinsic breakdown strength of insulating materials has been implemented based on an average electron model which assumes that the breakdown occurs when the average electron energy gain from the electric field exceeds the average energy loss to phonons. The approach is based on density functional perturbation theory and on the direct integration of electronic scattering probabilities over all possible final states, with no adjustable parameters. The computed intrinsic breakdown field for several prototypical materials compares favorably with available experimental data. This model also provides physical insight into the material properties that affect breakdown.
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77.22.Jp Dielectric breakdown and space-charge effects
63.20.kd Phonon-electron interactions

The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy

Charles M. Brooks, Rajiv Misra, Julia A. Mundy, Lei A. Zhang, Brian S. Holinsworth, Kenneth R. O'Neal, Tassilo Heeg, Willi Zander, J. Schubert, Janice L. Musfeldt, Zi-Kui Liu, David A. Muller, Peter Schiffer, and Darrell G. Schlom

Appl. Phys. Lett. 101, 132907 (2012); http://dx.doi.org/10.1063/1.4755765 (4 pages) | Cited 2 times

Online Publication Date: 28 September 2012

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We report the growth of single-phase (0001)-oriented epitaxial films of the purported electronically driven multiferroic, LuFe2O4, on (111) MgAl2O4, (111) MgO, and (0001) 6H-SiC substrates. Film stoichiometry was regulated using an adsorption-controlled growth process by depositing LuFe2O4 in an iron-rich environment at pressures and temperatures where excess iron desorbs from the film surface during growth. Scanning transmission electron microscopy reveals reaction-free film-substrate interfaces. The magnetization increases rapidly below 240 K, consistent with the paramagnetic-to-ferrimagnetic phase transition of bulk LuFe2O4. In addition to the ∼0.35 eV indirect band gap, optical spectroscopy reveals a 3.4 eV direct band gap at the gamma point.
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75.70.Ak Magnetic properties of monolayers and thin films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.85.+t Magnetoelectric effects, multiferroics
68.43.Mn Adsorption kinetics
75.50.Gg Ferrimagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
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