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24 Sep 2012

Volume 101, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 133101 (2012); http://dx.doi.org/10.1063/1.4752467 (5 pages)

Yen Husn Su and Wei-Yu Chen
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Nanoantenna-like properties of sea-urchin shaped ZnO as a nanolight filter

Yen Husn Su and Wei-Yu Chen

Appl. Phys. Lett. 101, 133101 (2012); http://dx.doi.org/10.1063/1.4752467 (5 pages) | Cited 1 time

Online Publication Date: 24 September 2012

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A light scattering peak of ZnO rods is presented at 543.2 nm. The radiation peaks of ZnO nanospines correspond to 496.6 nm and 630.6 nm due to the breaking of the symmetry of the ZnO rods. The radiation peaks of sea-urchin shaped ZnO was observed and confirmed by utilizing the dipole approximation. Sea-urchin shaped ZnO can tune and then filter different frequencies of light by utilizing incident light to illuminate at the different positions of sea-urchin shaped ZnO which works like a nanolight filter device and has potential applications in photonic computers, bio-light emission device, and solar cells.
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78.66.Hf II-VI semiconductors
42.79.Ci Filters, zone plates, and polarizers
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition

J.-C. Orlianges, J. Leroy, A. Crunteanu, R. Mayet, P. Carles, and C. Champeaux

Appl. Phys. Lett. 101, 133102 (2012); http://dx.doi.org/10.1063/1.4754708 (4 pages) | Cited 1 time

Online Publication Date: 24 September 2012

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Nanostructured vanadium dioxide is one of the most interesting and studied member of the vanadates family performing a reversible transition from an insulating state to a metallic state associated with a structural transition when heated above a temperature of 68 °C. On the other hand, noble metal nanoparticles (NPs) support localized surface plasmon resonance which causes selective absorption bands in the visible and near-IR regions. The purpose of this letter is to study structural, optical, and electrical properties of vanadium dioxide thin films containing gold nanoparticles synthetized using pulsed laser deposition process. Thus, we have performed x-ray diffraction, optical transmission, and four point probe electrical measurements to investigate the nanocomposite properties versus its temperature. Interestingly, we have observed switching behavior for VO2 film containing gold NPs with a resistivity contrast of four orders of magnitude and a decrease of its transition temperature.
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73.61.Ng Insulators
78.66.Nk Insulators
81.15.Fg Pulsed laser ablation deposition
81.16.-c Methods of micro- and nanofabrication and processing
64.70.K- Solid-solid transitions
68.55.A- Nucleation and growth

Implications of nanostructuring on the thermoelectric properties in half-Heusler alloys

A. Bhardwaj, D. K. Misra, J. J. Pulikkotil, S. Auluck, A. Dhar, and R. C. Budhani

Appl. Phys. Lett. 101, 133103 (2012); http://dx.doi.org/10.1063/1.4754570 (5 pages) | Cited 1 time

Online Publication Date: 25 September 2012

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High energy ball milled Zr0.25Hf0.75NiSn alloys subjected to spark plasma sintering show an enhanced thermoelectric figure of merit in comparison with its normal bulk material synthesized by arc-melting process. The enhancement is due to increase in Seebeck coefficient with simultaneous decrease in thermal conductivity which follows due to increase in the cell volume. Theoretical calculations find that volume expansion facilitates band narrowing effects leading to high Seebeck coefficient and that decreasing orbital overlap which results in weak bonding leads to dampening the phonon propagation in addition to the interface scattering of phonons from phase boundaries.
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72.15.Jf Thermoelectric and thermomagnetic effects
81.16.-c Methods of micro- and nanofabrication and processing
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.20.Wk Machining, milling
61.46.-w Structure of nanoscale materials
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys

Feedback cooling of cantilever motion using a quantum point contact transducer

M. Montinaro, A. Mehlin, H. S. Solanki, P. Peddibhotla, S. Mack, D. D. Awschalom, and M. Poggio

Appl. Phys. Lett. 101, 133104 (2012); http://dx.doi.org/10.1063/1.4754606 (5 pages)

Online Publication Date: 25 September 2012

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We use a quantum point contact (QPC) as a displacement transducer to measure and control the low-temperature thermal motion of a nearby micromechanical cantilever. The QPC is included in an active feedback loop designed to cool the cantilever's fundamental mechanical mode, achieving a squashing of the QPC noise at high gain. The minimum achieved effective mode temperature of 0.2 K and the displacement resolution of 10−11 m/math are limited by the performance of the QPC as a one-dimensional conductor and by the cantilever-QPC capacitive coupling.
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07.07.Mp Transducers
07.10.Cm Micromechanical devices and systems
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)

Detecting single molecules inside a carbon nanotube to control molecular sequences using inertia trapping phenomenon

Z. L. Hu, Gustaf Mårtensson, Murali Murugesan, Yifeng Fu, Xingming Guo, and Johan Liu

Appl. Phys. Lett. 101, 133105 (2012); http://dx.doi.org/10.1063/1.4754617 (4 pages)

Online Publication Date: 25 September 2012

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Here we show the detection of single gas molecules inside a carbon nanotube based on the change in resonance frequency and amplitude associated with the inertia trapping phenomenon. As its direct implication, a method for controlling the sequence of small molecule is then proposed to realize the concept of manoeuvring of matter atom by atom in one dimension. The detection as well as the implication is demonstrated numerically with the molecular dynamics method. It is theoretically assessed that it is possible for a physical model to be fabricated in the very near future.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Protocols for characterising quantum transport through nano-structures

Sudeshna Sen and N. S. Vidhyadhiraja

Appl. Phys. Lett. 101, 133106 (2012); http://dx.doi.org/10.1063/1.4754620 (5 pages) | Cited 2 times

Online Publication Date: 25 September 2012

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See Also: Erratum

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In this work, we have analysed the exact closed-form solutions for transport quantities through a mesoscopic region which may be characterised by a polynomial functional of resonant transmission functions. These are then utilized to develop considerably improved protocols for parameters relevant for quantum transport through molecular junctions and quantum dots. The protocols are shown to be experimentally feasible and should yield the parameters at much higher resolution than the previously proposed ones.
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73.23.-b Electronic transport in mesoscopic systems

Direct visualization method of the atomic structure of light and heavy atoms with double-detector Cs-corrected scanning transmission electron microscopy

Yasutoshi Kotaka

Appl. Phys. Lett. 101, 133107 (2012); http://dx.doi.org/10.1063/1.4756783 (5 pages)

Online Publication Date: 27 September 2012

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The advent of Cs-corrected scanning transmission electron microscopy (STEM) has advanced the observation of atomic structures in materials and nanotechnology devices. High-angle annular dark-field (HAADF)-STEM using an annular detector visualizes heavy elements as bright spots at atomic resolution that can be observed with the Z-contrast technique. In this study, the atomic column of light elements is directly observed as bright spots by middle-angle bright-field (MABF)-STEM imaging. Therefore, a double-detector STEM imaging method was developed, exploiting the advantage of both MABF-STEM and HAADF-STEM to maximum, which consists of multiple exposures of simultaneously observed MABF- and HAADF-STEM images in red-green-blue color.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Information processing with a single multifunctional nanofluidic diode

Patricio Ramirez, Mubarak Ali, Wolfgang Ensinger, and Salvador Mafe

Appl. Phys. Lett. 101, 133108 (2012); http://dx.doi.org/10.1063/1.4754845 (4 pages) | Cited 2 times

Online Publication Date: 27 September 2012

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We show that a multifunctional nanofluidic diode, based on a single pH-sensitive polymeric pore, can be used for different information processing tasks. This fact should permit a significant simplification of the logic circuitry in physico-chemical processors. The inputs are the pH values in the external solutions and the applied potential difference (voltage). The output is the electrical pore conductance. As a proof of concept, different logic and arithmetic computational functions are demonstrated.
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84.30.Sk Pulse and digital circuits
85.35.-p Nanoelectronic devices

Synchrotron x-ray modification of nanoparticle superlattice formation

Chenguang Lu, Austin J. Akey, and Irving P. Herman

Appl. Phys. Lett. 101, 133109 (2012); http://dx.doi.org/10.1063/1.4752239 (3 pages) | Cited 1 time

Online Publication Date: 27 September 2012

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The synchrotron x-ray radiation used to perform small angle x-ray scattering (SAXS) during the formation of three-dimensional nanoparticle superlattices by drop casting nanoparticle solutions affects the structure and the local crystalline order of the resulting films. The domain size decreases due to the real-time SAXS analysis during drying and more macroscopic changes are visible to the eye.
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78.70.Ck X-ray scattering
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
68.65.Cd Superlattices
81.16.-c Methods of micro- and nanofabrication and processing

InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy

T. Sugaya, A. Takeda, R. Oshima, K. Matsubara, S. Niki, and Y. Okano

Appl. Phys. Lett. 101, 133110 (2012); http://dx.doi.org/10.1063/1.4755757 (4 pages) | Cited 1 time

Online Publication Date: 27 September 2012

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We report InGaP-based multistacked InGaAs quantum dot (QD) solar cells with GaAs spacer layers. We obtain a highly stacked and well-aligned InGaAs QD structure with GaAs spacer layers in an InGaP matrix grown by solid-source molecular beam epitaxy. The photoluminescence intensity of the InGaAs QDs in the InGaP matrix increases as the number of QD layers increases, which indicates the growth of a high-quality InGaP-based multistacked InGaAs QD structure. The short-circuit current density and the conversion efficiency of the InGaP-based QD solar cells increase as the number of InGaAs QD layers increases.
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88.40.J- Types of solar cells
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots

Tellurium-modified silicon nanowires with a large negative temperature coefficient of resistance

Li Yang, Haiyang Lin, Tao Wang, Shiyong Ye, Mingwang Shao, and Shuit-Tong Lee

Appl. Phys. Lett. 101, 133111 (2012); http://dx.doi.org/10.1063/1.4757002 (3 pages) | Cited 1 time

Online Publication Date: 28 September 2012

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The paper reported a thermosensitive material based on tellurium nanoparticle-decorated silicon nanowires with large negative temperature coefficient of resistance. In the fabrication progress, silicon nanowires were etched with HF to get hydrogen-terminated ones, which could reduce TeO32− ion to form Te-modified silicon nanowires. Such Te-modified silicon nanowires showed good temperature-dependent performance as a linear relationship between resistivity and temperature in the range from 30 to 100 °C with high negative temperature coefficient of resistance being 8.2 × 10−3 °C−1.
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81.16.-c Methods of micro- and nanofabrication and processing
81.65.Cf Surface cleaning, etching, patterning
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
73.61.Le Other inorganic semiconductors
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