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1 Oct 2012

Volume 101, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 141101 (2012); http://dx.doi.org/10.1063/1.4742864 (4 pages)

Po-Hsun Huang, Michael Ian Lapsley, Daniel Ahmed, Yuchao Chen, Lin Wang, and Tony Jun Huang
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A single-layer, planar, optofluidic switch powered by acoustically driven, oscillating microbubbles

Po-Hsun Huang, Michael Ian Lapsley, Daniel Ahmed, Yuchao Chen, Lin Wang, and Tony Jun Huang

Appl. Phys. Lett. 101, 141101 (2012); http://dx.doi.org/10.1063/1.4742864 (4 pages) | Cited 1 time

Online Publication Date: 1 October 2012

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Merging acoustofluidic mixing with optofluidic integration, we have demonstrated a single-layer, planar, optofluidic switch that is driven by acoustically excited oscillating microbubbles. The device was found to have a switching speed of 5 Hz, an insertion loss of 6.02 dB, and an extinction ratio of 28.48 dB. With its simplicity, low fluid consumption, and compatibility with other microfluidic devices, our design could lead to a line of inexpensive, yet effective optical switches for many lab-on-a-chip applications.
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42.82.Gw Other integrated-optical elements and systems
47.61.Ne Micromixing
84.32.Dd Connectors, relays, and switches
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Electron injection in magnesium-doped organic light-emitting diodes

Kisoo Kim, Kihyon Hong, Illhwan Lee, Sungjun Kim, and Jong-Lam Lee

Appl. Phys. Lett. 101, 141102 (2012); http://dx.doi.org/10.1063/1.4753796 (4 pages)

Online Publication Date: 1 October 2012

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We investigated alkali metal doping mechanism by comparative analysis between an Mg-Alq3 co-deposition (Mg:Alq3) and an Mg deposition on Alq3 films (Mg/Alq3). The operating voltage decreased by 0.4 V and the luminance increased by 60 cd/m2 at 11 mA/cm2 for devices constructed from the Mg:Alq3. However, the device characteristics of Mg/Alq3 samples were degraded. Our experimental results using an in-situ photoemission study showed that alkali metal doping in Alq3 did not induce band bending, but reduce electron injection barrier by charge transfer from alkali metals to Alq3 molecules.
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85.60.Jb Light-emitting devices

Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors

A. Pitanti, D. Coquillat, D. Ercolani, L. Sorba, F. Teppe, W. Knap, G. De Simoni, F. Beltram, A. Tredicucci, and M. S. Vitiello

Appl. Phys. Lett. 101, 141103 (2012); http://dx.doi.org/10.1063/1.4757005 (3 pages) | Cited 4 times

Online Publication Date: 1 October 2012

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Heterostructured InAs/InSb nanowire (Nw) based field effect transistors (FET) have been fabricated and tested as Terahetz radiation detectors. While responsivity and noise equivalent power compare with the ones of InAs nanowire detectors, the presence of small-gap InSb semiconductor gives rise to interesting physical effects such an increase of the detected signal with charge injection through the wire, at odds with standard FET-detectors. Additionally, the photodetected signal voltage changes its sign after a threshold gate bias, which we explain considering surface-related transport and field asymmetries imposed by the use of a lateral gate electrode.
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85.30.Tv Field effect devices
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques

Optically induced two-dimensional photonic quasicrystal lattices in iron-doped lithium niobate crystal with an amplitude mask

Wentao Jin and Yuanmei Gao

Appl. Phys. Lett. 101, 141104 (2012); http://dx.doi.org/10.1063/1.4754136 (5 pages)

Online Publication Date: 1 October 2012

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We fabricate two-dimensional photonic quasicrystal lattices in iron-doped lithium niobate photorefractive crystal by a single amplitude mask. The experimental setup of this method is very simple and flexible without complicated optical adjustment system. It can be applied in almost any optical laboratories. We analyze the photonic quasicrystal lattices by plane wave guiding, Brillouin-zone spectroscopy and far field diffraction pattern imaging. The induced photonic quasicrystal lattices can exist stably for a long time in the photorefractive crystal. This method can be easily extended to generate more complex quasi-periodicity microstructures by designing the amplitude mask properly.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Mg Photorefractive effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Qs Photonic bandgap materials

Strong light-extraction enhancement in GaInN light-emitting diodes patterned with TiO2 micro-pillars with tapered sidewalls

Ming Ma, Jaehee Cho, E. Fred Schubert, Yongjo Park, Gi Bum Kim, and Cheolsoo Sone

Appl. Phys. Lett. 101, 141105 (2012); http://dx.doi.org/10.1063/1.4756797 (4 pages)

Online Publication Date: 2 October 2012

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An effective method to enhance the light extraction for GaInN light-emitting diodes (LEDs) is reported. The method employs TiO2 micro-pillars with tapered sidewalls, which are refractive-index-matched to the underlying GaN. The tapered micro-pillars are fabricated by using reflowed photoresist as mask during CHF3-based dry etch, with O2 added in order to precisely control the taper angle. LEDs patterned with TiO2 micro-pillars with tapered sidewalls show a 100% enhancement in light-output power over planar reference LEDs. The measured results are in good agreement with ray-tracing simulations, showing strong potential of optical surfaces that are controlled in terms of refractive index and lateral structure.
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85.60.Jb Light-emitting devices
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

In-line Mach-Zehnder interferometer composed of microtaper and long-period grating in all-solid photonic bandgap fiber

Zhifang Wu, Yan-ge Liu, Zhi Wang, Tingting Han, Shuo Li, Meng Jiang, Perry Ping Shum, and Xuan Quyen Dinh

Appl. Phys. Lett. 101, 141106 (2012); http://dx.doi.org/10.1063/1.4756894 (4 pages) | Cited 1 time

Online Publication Date: 2 October 2012

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We report a compact in-line Mach-Zehnder interferometer combining a microtaper with a long-period grating (LPG) in a section of all-solid photonic bandgap fiber. Theoretical and experimental investigations reveal that the interferometer works from the interference between the fundamental core mode and the LP01 cladding supermodes. The mechanism underlying the mode coupling caused by the microtaper can be attributed to a bandgap-shifting as the fiber diameter is abruptly scaled down. In addition, the interferometer designed to strengthen the coupling ratio of the long-period grating has a promising practical application in the simultaneous measurement of curvature and temperature.
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42.81.Pa Sensors, gyros
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
07.20.Dt Thermometers
07.60.Ly Interferometers
42.70.Qs Photonic bandgap materials
42.79.Dj Gratings

Tm3+ doped silicon thin film and waveguides for mid-infrared sources

Matthew Murray, T. Toney Fernandez, Billy Richards, Gin Jose, and Animesh Jha

Appl. Phys. Lett. 101, 141107 (2012); http://dx.doi.org/10.1063/1.4756899 (4 pages)

Online Publication Date: 2 October 2012

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A Tm3+ doped nanoparticulate silicon thin film and subsequent surface waveguides fully fabricated by using femtosecond (fs) pulsed laser are reported. The thin film exhibits strong room temperature fluorescence peaked at 2.04 μm when using an 808 nm diode laser. The fs-pulsed laser deposited film was then processed using fs-laser micromachining for the formation of channel waveguides, which were subsequently coupled with a 1550 nm laser and characterized for their infrared mode propagation.
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42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer
78.55.-m Photoluminescence, properties and materials
78.66.Db Elemental semiconductors and insulators
42.55.Px Semiconductor lasers; laser diodes

Hyperspectral optical near-field imaging: Looking graded photonic crystals and photonic metamaterials in color

Jean Dellinger, K. Van Do, Xavier Le Roux, Frédérique de Fornel, Eric Cassan, and Benoît Cluzel

Appl. Phys. Lett. 101, 141108 (2012); http://dx.doi.org/10.1063/1.4756902 (4 pages) | Cited 1 time

Online Publication Date: 2 October 2012

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multimedia

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Using a scanning near-field optical microscope operating with a hyperspectral detection scheme, we report the direct observation of the mirage effect within an on-chip integrated artificial material made of a two dimensional graded photonic crystal. The light rainbow due to the material dispersion is quantified experimentally and quantitatively compared to three dimensional plane wave assisted Hamiltonian optics predictions of light propagation.
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42.82.Gw Other integrated-optical elements and systems
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
07.79.-v Scanning probe microscopes and components
42.70.Qs Photonic bandgap materials
42.79.Ry Gradient-index (GRIN) devices

Dynamic control of directional asymmetry observed in ultrafast laser direct writing

P. S. Salter and M. J. Booth

Appl. Phys. Lett. 101, 141109 (2012); http://dx.doi.org/10.1063/1.4756904 (4 pages)

Online Publication Date: 2 October 2012

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A liquid crystal spatial light modulator (SLM) is used to control the focal symmetry and the associated directional “quill” effect encountered when using a femtosecond laser for direct laser writing of fused silica. Applying a blazed grating to the SLM effectively introduces pulse front tilt to the fabrication beam and a spatiotemporal asymmetry at the focus. As a result different fabricated features are generated when moving the substrate in opposite directions relative to the tilt. It is additionally shown that inhomogeneous pupil illumination can cause similar directionality in the fabrication via a spatial asymmetry in the focus.
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42.62.-b Laser applications
78.47.J- Ultrafast spectroscopy (<1 psec)

GeSn p-i-n detectors integrated on Si with up to 4% Sn

M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, and J. Schulze

Appl. Phys. Lett. 101, 141110 (2012); http://dx.doi.org/10.1063/1.4757124 (4 pages) | Cited 1 time

Online Publication Date: 3 October 2012

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GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure was grown by means of ultra low temperature (100 °C) molecular beam epitaxy. The Sn content shifts the responsivity into the infrared, about 310 nm for the 4% Sn sample. An increase of the optical responsivity for wavelengths higher than 1550 nm can be observed with increasing Sn content. At 1600 nm, the optical responsivity is increased by more than a factor of 10 for the GeSn diode with 4% Sn in comparison to the Ge reference diode.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Investigation of the conduction in an implanted layer of protons in a potassium lithium tantalate niobate substrate

Har’el Ilan, Sagi Frishman, and Aharon J. Agranat

Appl. Phys. Lett. 101, 141111 (2012); http://dx.doi.org/10.1063/1.4757128 (3 pages) | Cited 1 time

Online Publication Date: 3 October 2012

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The electrical conductivity in the amorphous layer formed by the implantation of protons at 1.15 MeV with fluence of 1.1×1017 ions/cm2 within the depth of potassium lithium tantalate niobate is investigated by four probes and Hall effect measurements. It is shown that the conductivity originates from electrons that are induced by “Hydrogen donors” that reside in a band structure 0.22 eV below the conduction band. It is claimed that this phenomenon enables the construction of conductive structures with submicron features within the depth of the substrate that can be used as embedded electrodes in electrooptical devices integrated in this substrate.
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73.25.+i Surface conductivity and carrier phenomena
61.72.up Other materials
71.20.Ps Other inorganic compounds
72.20.My Galvanomagnetic and other magnetotransport effects
73.20.At Surface states, band structure, electron density of states

Design of lumpy metallic nanoparticles for broadband and wide-angle light scattering

Nicholas Stokes, Baohua Jia, and Min Gu

Appl. Phys. Lett. 101, 141112 (2012); http://dx.doi.org/10.1063/1.4757135 (4 pages) | Cited 2 times

Online Publication Date: 3 October 2012

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Broadband and wide-angle light scattering media are highly desirable in photonic applications. In this paper, we theoretically investigate the light scattering properties of lumpy nanoparticles of silver, aluminum, and copper compared to those of smooth nanospheres with the same volume. The lumpy nanoparticles are found to provide broadband scattering enhancement over the smooth nanoparticles in a variety of dielectric environments. A maximum 18% enhancement in angular scattering for Al lumpy particles was found. More importantly, near-field scattering intensity mapping confirms that the enhanced scattering is achieved in all directions, making them more attractive in diverse photonic applications.
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78.40.Kc Metals, semimetals, and alloys
78.30.Er Solid metals and alloys

Light trapping enhancements of inverted pyramidal structures with the tips for silicon solar cells

Hsin-Hung Cheng, Ying-Yu Chang, Jen-You Chu, Ding-Zheng Lin, Yi-Ping Chen, and Jia-Han Li

Appl. Phys. Lett. 101, 141113 (2012); http://dx.doi.org/10.1063/1.4755758 (4 pages)

Online Publication Date: 3 October 2012

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The anti-reflection properties of the inverted pyramidal structures with the tips for crystalline silicon solar cells are studied numerically and experimentally, and the comparisons with inverted pyramidal structures without the tips are given. Because the light has more multiple reflection between different surfaces of the inverted pyramidal structures with the tips and more light energies are trapped and absorbed by the solar cell materials, the structures with the tips can have smaller reflection. This study can be useful for the designs of textured structures for the solar cells or other anti-reflection applications.
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88.40.jj Silicon solar cells
42.70.Gi Light-sensitive materials

Controlled spatial switching and routing of surface plasmons in designed single-crystalline gold nanostructures

R. Könenkamp, R. C. Word, J. P. S. Fitzgerald, Athavan Nadarajah, and S. D. Saliba

Appl. Phys. Lett. 101, 141114 (2012); http://dx.doi.org/10.1063/1.4757125 (4 pages) | Cited 1 time

Online Publication Date: 4 October 2012

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Electron emission microscopy is used to visualize plasmonic routing in gold nano-structures. We show that in single-crystalline gold structures reliable routing can be achieved with polarization switching. The routing is due to the polarization dependence of the photon-to-plasmon coupling, which controls the mode distribution in the plasmonic gold film. We use specifically designed, single-crystalline planar structures. In these structures, the plasmon propagation length is sufficiently large such that significant plasmon power can be delivered to the near-field region around the end tips of the router. Solid state devices based on internal electron excitation and emission processes appear feasible.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations

Tunable, narrow-band, all-metallic microwave absorber

N. Mattiucci, R. Trimm, G. D'Aguanno, N. Aközbek, and M. J. Bloemer

Appl. Phys. Lett. 101, 141115 (2012); http://dx.doi.org/10.1063/1.4757282 (4 pages) | Cited 2 times

Online Publication Date: 4 October 2012

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We exploit the metamaterial properties of a thick metallic grating with extreme sub-wavelength slits on a metallic slab to achieve complete absorption of transverse magnetic polarized microwaves. We measure narrow bands of total absorption (up to 99.9999%) from normal to grazing incidence that can be tuned by varying an air gap between the grating and the slab. Unlike typical absorbers, the structure is mostly metallic with a 97% filling factor, and no absorptive material beside the metal itself is employed. We access the absorption properties of metals in the microwave where they are commonly believed to be perfect reflectors.
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84.40.-x Radiowave and microwave (including millimeter wave) technology

The corner effect in hexagonal whispering gallery microresonators

C. P. Dietrich, M. Lange, T. Böntgen, and M. Grundmann

Appl. Phys. Lett. 101, 141116 (2012); http://dx.doi.org/10.1063/1.4757572 (5 pages)

Online Publication Date: 4 October 2012

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Hexagonal microresonators were investigated regarding the influence of the nanometer scale geometry of their corners on light out-coupling, mode quality factor, and lasing threshold of whispering gallery modes (WGMs). For this purpose, ZnO microwires with hexagonal cross section grown by carbothermal vapor-phase transport were fabricated. It turned out that their corners can either be sharp (curvature radius rC<10 nm) or be blunt (rC ≈ 400 nm). Blunt corners enhance light out-coupling of WGM in the low-excitation regime but otherwise increase mode linewidth. Sharp corners hinder light out-coupling at low excitations leading to long cavity photon lifetimes and facilitating room-temperature WGM lasing at lowest reported lasing thresholds of 73 kW/cm2.
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42.82.-m Integrated optics
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.-e Optical elements, devices, and systems

Detection of pulsed far-infrared and terahertz light with an atomic force microscope

J.-M. Ortega, F. Glotin, R. Prazeres, J.-P. Berthet, and A. Dazzi

Appl. Phys. Lett. 101, 141117 (2012); http://dx.doi.org/10.1063/1.4757606 (3 pages)

Online Publication Date: 4 October 2012

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We show that a commercial atomic force microscope can be used at room temperature as a detector throughout the infrared spectrum simply by recording the induced oscillation of its cantilever after irradiation by a pulsed laser. The oscillation amplitude can be made larger by spraying an absorbing graphite layer on the tip side. We demonstrate that its good sensitivity is due to a bilayer effect: their different thermal expansion coefficient forcing them to bend under irradiation. For the far-infrared spectral range, this device avoids the use of Helium cooled detectors and their numerous constraints.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
07.79.Lh Atomic force microscopes

Room temperature terahertz polariton emitter

Markus Geiser, Giacomo Scalari, Fabrizio Castellano, Mattias Beck, and Jérôme Faist

Appl. Phys. Lett. 101, 141118 (2012); http://dx.doi.org/10.1063/1.4757611 (4 pages) | Cited 1 time

Online Publication Date: 4 October 2012

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Terahertz (THz) range electroluminescence from intersubband polariton states is observed in the ultra strong coupling regime, where the interaction energy between the collective excitation of a dense electron gas and a photonic mode is a significant portion of the uncoupled excitation energy. The polariton's increased emission efficiency along with a parabolic electron confinement potential allows operation up to room temperature in a nonresonant pumping scheme. This observation of room temperature electroluminescence of an intersubband device in the THz range is a promising proof of concept for more powerful THz sources.
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78.70.Gq Microwave and radio-frequency interactions
03.75.Ss Degenerate Fermi gases
05.30.Fk Fermion systems and electron gas
71.10.Ca Electron gas, Fermi gas
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.60.Fi Electroluminescence

All-optical on-chip dynamic frequency conversion

M. Castellanos Muñoz, A. Yu. Petrov, and M. Eich

Appl. Phys. Lett. 101, 141119 (2012); http://dx.doi.org/10.1063/1.4757614 (4 pages)

Online Publication Date: 4 October 2012

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Dynamic processes allow controlling light through a fast modification of the optical properties of the confining structure while the light is present in it. Here, we demonstrate the on-chip dynamic frequency conversion of a light signal by performing this modification through a short optical switching pulse co-propagating on-chip with the signal. A frequency-dependent propagation velocity allows the switching pulse to overtake a co-propagating signal pulse running ahead while on its way driving the dynamic process. We show a dynamic frequency shift of up to 70 GHz with a conversion efficiency of up to 25%.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity

X. Zeng, D. L. Boïko, G. Cosendey, M. Glauser, J.-F. Carlin, and N. Grandjean

Appl. Phys. Lett. 101, 141120 (2012); http://dx.doi.org/10.1063/1.4757758 (4 pages) | Cited 2 times

Online Publication Date: 5 October 2012

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Optically pumped InGaN/GaN quantum well vertical-external-cavity surface-emitting laser emitting at 420 nm has been realized. Lasing at external cavity lengths of up to 50 mm is demonstrated, making integration of practical sized intracavity elements possible. Spectral and beam profile measurements indicate best operation conditions in a semiconfocal cavity configuration. Lasing threshold of 20.9 W is achieved for a 49 mm long cavity with output beam quality parameter M2 not exceeding 1.1.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Electro-optically cavity dumped 2 μm semiconductor disk laser emitting 3 ns pulses of 30 W peak power

Sebastian Kaspar, Marcel Rattunde, Tino Töpper, Ulrich T. Schwarz, Christian Manz, Klaus Köhler, and Joachim Wagner

Appl. Phys. Lett. 101, 141121 (2012); http://dx.doi.org/10.1063/1.4757760 (4 pages)

Online Publication Date: 5 October 2012

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A 2 μm electro-optically cavity-dumped semiconductor disk laser (SDL) with a pulse full width at half maximum of 3 ns, a pulse peak power of 30 W, and repetition rates adjustable between 87 kHz and 1 MHz is reported. For ns-pulse cavity dumping the SDL was set up with a 35-cm long cavity into which an intra-cavity Brewster-angled polarizer prism and a Pockels cell for rotation of the linear polarization were inserted. By means of internal total reflection in the birefringent polarizer, pulses are coupled out of the cavity sideways. This variant of ns-pulse 2-μm SDL is well suited for applications such as high-precision light detection and ranging or ns-pulse laser materials processing after further power amplification.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.62.-b Laser applications
42.79.Bh Lenses, prisms and mirrors

Hybrid organic/GaN photonic crystal light-emitting diode

J. Herrnsdorf, B. Guilhabert, J. J. D. McKendry, Z. Gong, D. Massoubre, S. Zhang, S. Watson, A. E. Kelly, E. Gu, N. Laurand, and M. D. Dawson

Appl. Phys. Lett. 101, 141122 (2012); http://dx.doi.org/10.1063/1.4757870 (4 pages)

Online Publication Date: 5 October 2012

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Periodically nano-patterned organic films incorporating color converting light-emitting polymers have been integrated onto InGaN/GaN light-emitting diodes (LEDs). Polarized and strongly modified hybrid LED emission is observed due to the photonic crystal effect of the nano-pattern. Emission characteristics are appropriate for various applications, and fast modulation capability with an optical −3 dB bandwidth of 168 MHz is demonstrated.
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85.60.Jb Light-emitting devices
85.40.Hp Lithography, masks and pattern transfer

Ghost imaging lidar via sparsity constraints

Chengqiang Zhao, Wenlin Gong, Mingliang Chen, Enrong Li, Hui Wang, Wendong Xu, and Shensheng Han

Appl. Phys. Lett. 101, 141123 (2012); http://dx.doi.org/10.1063/1.4757874 (3 pages) | Cited 6 times

Online Publication Date: 5 October 2012

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For remote sensing, high-resolution imaging techniques are helpful to catch more characteristic information of the target. We extend pseudo-thermal light ghost imaging to the area of remote imaging and propose a ghost imaging lidar system. The experimental results demonstrate that the real-space image of a target at about 1.0 km range with 20 mm resolution is achieved by ghost imaging via sparsity constraints (GISC) technique. The characters of GISC technique compared to the existing lidar systems are also discussed.
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42.79.Qx Range finders, remote sensing devices; laser Doppler velocimeters, SAR, and LIDAR
84.40.Xb Telemetry: remote control, remote sensing; radar

Enhancement of carbon nanotube photoluminescence by photonic crystal nanocavities

R. Watahiki, T. Shimada, P. Zhao, S. Chiashi, S. Iwamoto, Y. Arakawa, S. Maruyama, and Y. K. Kato

Appl. Phys. Lett. 101, 141124 (2012); http://dx.doi.org/10.1063/1.4757876 (3 pages) | Cited 4 times

Online Publication Date: 5 October 2012

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Photonic crystal nanocavities are used to enhance photoluminescence from single-walled carbon nanotubes. Micelle-encapsulated nanotubes are deposited on nanocavities within Si photonic crystal slabs and confocal microscopy is used to characterize the devices. Photoluminescence spectra and images reveal nanotube emission coupled to nanocavity modes. The cavity modes can be tuned throughout the emission wavelengths of carbon nanotubes, demonstrating the ability to enhance photoluminescence from a variety of chiralities.
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78.55.Hx Other solid inorganic materials
78.67.Ch Nanotubes
81.07.De Nanotubes

Temporal characterization of a picosecond extreme ultraviolet laser pumped in grazing incidence

L. Meng, A.-C. Bourgaux, S. Bastiani-Ceccotti, O. Guilbaud, M. Pittman, S. Kazamias, K. Cassou, S. Daboussi, D. Ros, and A. Klisnick

Appl. Phys. Lett. 101, 141125 (2012); http://dx.doi.org/10.1063/1.4757878 (3 pages)

Online Publication Date: 5 October 2012

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We report an experimental study of the temporal duration of a transient pumping extreme ultraviolet (XUV) laser emitted at 18.9 nm, using an ultrafast x-ray streak camera. We have investigated the shot-to-shot reproducibility of the pulse duration, as well as its behaviour as a function of several pumping parameters. Our results show that the pulse duration increases slowly with the pump pulse duration, in agreement with previous observations performed in a different geometry. The angle of the pump laser relative to the target surface also affects the XUV laser duration in a measurable way.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
06.60.Jn High-speed techniques (microsecond to femtosecond)
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