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1 Oct 2012

Volume 101, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 141101 (2012); http://dx.doi.org/10.1063/1.4742864 (4 pages)

Po-Hsun Huang, Michael Ian Lapsley, Daniel Ahmed, Yuchao Chen, Lin Wang, and Tony Jun Huang
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Path derivation for a wave scattered model to estimate height correlation function of rough surfaces

M. Zamani, S. M. Fazeli, M. Salami, S. Vasheghani Farahani, and G. R. Jafari

Appl. Phys. Lett. 101, 141601 (2012); http://dx.doi.org/10.1063/1.4756695 (4 pages)

Online Publication Date: 1 October 2012

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The long standing problem on finding the height correlation function is studied by the inverse scattering problem. We propose a method in the frame work of Kirchhoff theory which we call “path derivation of scattered wave” in order to obtain an expression for direct measurements of the height correlation function. This would provide adequate insight to rough surfaces. The efficiency of this method is due to the fact that the height correlation function could be estimated directly by measurements of the scattered intensity on a suggested path. The model is tested numerically and an experimental setup is suggested.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
68.35.B- Structure of clean surfaces (and surface reconstruction)

Stoichiometric controlling of boron carbide thin films by using boron-carbon dual-targets

Song Zhang, Wenzhong Lu, Chuanbin Wang, Qiang Shen, and Lianmeng Zhang

Appl. Phys. Lett. 101, 141602 (2012); http://dx.doi.org/10.1063/1.4754628 (4 pages)

Online Publication Date: 2 October 2012

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The stoichiometry of boron carbide thin films was controlled in the range of 0.1–8.9 via pulsed laser deposition by using boron-carbon dual-targets. The amorphous films sized 50 nm in thickness. The reaction rate of boron and carbon atoms increased with the increasing of target rotating speed. Carbon atoms preferentially substituted boron atoms within the chain site as sp2 hybridization at lower carbon concentrations and then within the icosahedrons site as sp3 hybridization at higher carbon concentrations.
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68.55.jd Thickness
81.15.Fg Pulsed laser ablation deposition

Electron transporting water-gated thin film transistors

Abdullah Al Naim and Martin Grell

Appl. Phys. Lett. 101, 141603 (2012); http://dx.doi.org/10.1063/1.4757131 (4 pages) | Cited 2 times

Online Publication Date: 2 October 2012

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We demonstrate an electron-transporting water-gated thin film transistor, using thermally converted precursor-route zinc-oxide (ZnO) intrinsic semiconductors with hexamethyldisilazene (HMDS) hydrophobic surface modification. Water gated HMDS-ZnO thin film transistors (TFT) display low threshold and high electron mobility. ZnO films constitute an attractive alternative to organic semiconductors for TFT transducers in sensor applications for waterborne analytes. Despite the use of an electrolyte as gate medium, the gate geometry (shape of gate electrode and distance between gate electrode and TFT channel) is relevant for optimum performance of water-gated TFTs.
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85.30.Tv Field effect devices

Implication of exotic topography depths of surface nanopits in scanning tunneling microscopy of HgCdTe

F. X. Zha, M. S. Li, J. Shao, Q. Y. Wang, X. R. Ren, K. An, X. L. Zhao, and X. C. Shen

Appl. Phys. Lett. 101, 141604 (2012); http://dx.doi.org/10.1063/1.4756938 (4 pages)

Online Publication Date: 4 October 2012

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The vacancy doped p-type narrow band semiconductor of Hg0.73Cd0.27Te was characterized by ultra-high vacuum scanning tunneling microscopy (STM) and spectroscopy. The imaging displays surprisingly different topographies for positive and negative imaging biases, between which the observed surface pits with the negative bias are few tens nanometers shallower than their counterparts with the positive bias. The effect is subjected to two different local tunneling mechanisms which are not solely dictated by surface electronic properties. The observation contrasts with the conventional geometric view of the nanometer-scale corrugation of STM topography.
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68.35.bg Semiconductors
68.55.J- Morphology of films
61.46.-w Structure of nanoscale materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Direct imaging and spectral identification of the interfaces in organic semiconductor-ferromagnet heterojunction

D. H. Wei, Chia-Hao Wang, Hui-Ching Chang, Yuet-Loy Chan, Chih-Hao Lee, and Yao-Jane Hsu

Appl. Phys. Lett. 101, 141605 (2012); http://dx.doi.org/10.1063/1.4756943 (4 pages)

Online Publication Date: 4 October 2012

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Using x-ray spectromicroscopy, we studied the interface of pentacene (Pn)-cobalt (Co) heterojunction fabricated by thermal evaporation in an ultra-high vacuum environment. Through element-specific images and absorption spectroscopic analysis, we found evidences suggesting that part of the Co top layer penetrates into Pn film and hybridizes with molecules. As the Curie temperature of infiltrated Co clusters is dimension sensitive, the Co penetration would create an ill-defined interfacial region whose magnetization depends on the temperature and depth of cobalt penetration. The magnetic complexity at Pn/Co interface was found reduced after inserting a thin Cu layer between Pn and Co.
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78.70.Dm X-ray absorption spectra
68.37.Yz X-ray microscopy
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Cc Other ferromagnetic metals and alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

First principles calculations of the band offset at SrTiO3−TiO2 interfaces

Nunzio Roberto D'Amico, Giovanni Cantele, and Domenico Ninno

Appl. Phys. Lett. 101, 141606 (2012); http://dx.doi.org/10.1063/1.4757281 (4 pages)

Online Publication Date: 4 October 2012

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We report on first principles calculations of the properties of the epitaxial SrTiO3−TiO2 (anatase) heterojunction, with an emphasis on the electronic band profile and lineup at the interface. The valence and conduction band offsets are calculated as a function of the number of anatase layers deposited onto the SrTiO3, as well as of the position of an oxygen vacancy with respect to the interface. It is shown that the presence of oxygen vacancies in the SrTiO3 is a way to effectively lower the barrier heights at the interface. Our results are in agreement with recent experiments reporting nearly zero band offset.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.jd Vacancies
71.15.-m Methods of electronic structure calculations
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