APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

8 Oct 2012

Volume 101, Issue 15, Articles (15xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 153501 (2012); http://dx.doi.org/10.1063/1.4756693 (3 pages)

Brandon G. Cook, William R. French, and Kálmán Varga
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Technology-compatible hot carrier solar cell with energy selective hot carrier absorber and carrier-selective contacts

D. König, Y. Takeda, and B. Puthen-Veettil

Appl. Phys. Lett. 101, 153901 (2012); http://dx.doi.org/10.1063/1.4757979 (4 pages) | Cited 2 times

Online Publication Date: 8 October 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose a hot carrier solar cell based on epitaxial growth of a quantum well superlattice and adjacent contact barriers. The concept fulfills required electronic, optical, and several phononic criteria. The first superlattice miniband determines the absorption threshold. The second miniband with appropriate energy width and position provides energy selectivity in situ; contacts are optimized for carrier selectivity exclusively. Electronic transport properties were investigated including elastic random electron–electron scattering, random layer thickness deviation, and illumination as differential absorption per quantum well using a Monte-Carlo code. Carrier extraction probability and energy selectivity strongly suggest a practical implementation of the proposed concept.
Show PACS
88.40.J- Types of solar cells
02.50.-r Probability theory, stochastic processes, and statistics

Enhanced carrier transport by defect passivation in Si/SiO2 nanostructure-based solar cells

Keiji Watanabe, Ryuta Tsuchiya, Toshiyuki Mine, Yoshiki Yonamoto, Naotoshi Akamatsu, and Mutsuko Hatano

Appl. Phys. Lett. 101, 153902 (2012); http://dx.doi.org/10.1063/1.4758473 (3 pages)

Online Publication Date: 9 October 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate the relationship between the defect states and the carrier transport property of Si nanostructure-based solar cells. The solar cell consists of a Schottky junction including Si/SiO2 multiple quantum wells. The carrier transport is significantly enhanced by forming gas annealing of Si/SiO2 multiple quantum wells, which is well correlated with the decrease in the Pb and E′ center densities evaluated by electron spin resonance. In particular, we find that high temperature (>600 °C) annealing is necessary to passivate E′ center. Our results demonstrate the significance of defect passivation for the realization of high efficiency Si nanostructure-based solar cells.
Show PACS
88.40.H- Solar cells (photovoltaics)

Development of pulsed laser deposition for CdS/CdTe thin film solar cells

Bing Li, Jianwei Liu, Guowei Xu, Rongtao Lu, Lianghuan Feng, and Judy Wu

Appl. Phys. Lett. 101, 153903 (2012); http://dx.doi.org/10.1063/1.4759116 (4 pages) | Cited 2 times

Online Publication Date: 10 October 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This work explores in situ fabrication of thin film CdS (100 nm)/CdTe (1.5 μm) solar cells using pulsed laser deposition (PLD). Optimization of the PLD processing conditions, including laser energy density, substrate temperature, and the PLD chamber pressure, was achieved with respect to pinhole-free CdS and CdTe layers and solar power conversion efficiency. High efficiency up to 6.68% has been demonstrated and better performance is anticipated with optimization of the PLD process.
Show PACS
88.40.H- Solar cells (photovoltaics)
88.40.J- Types of solar cells
68.55.ag Semiconductors
81.05.Dz II-VI semiconductors
81.16.Mk Laser-assisted deposition
81.15.Fg Pulsed laser ablation deposition
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close