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8 Oct 2012

Volume 101, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 101, 153501 (2012); http://dx.doi.org/10.1063/1.4756693 (3 pages)

Brandon G. Cook, William R. French, and Kálmán Varga
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An innovative cloak enables arbitrary multi-objects hidden with visions and movements

Tsung-Yu Huang (黃宗鈺), Hsin-Cheng Lee (李信成), Ieng-Wai Un (阮英偉), and Ta-Jen Yen (嚴大任)

Appl. Phys. Lett. 101, 151901 (2012); http://dx.doi.org/10.1063/1.4757868 (4 pages)

Online Publication Date: 9 October 2012

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We propose an innovative cloak to enable arbitrary multi-objects hidden with visions and movements. We develop the cloak with spatially varying constitutive parameters by employing transformation optics with two-step coordinate transformations and testify the performance of the cloak by finite element based simulation software. In simulation, the electric field distributions (Ez) of the cloak for different circumstances agree with the analytical prediction well.
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42.70.-a Optical materials
41.20.-q Applied classical electromagnetism
42.25.Bs Wave propagation, transmission and absorption

Micromachined switchable metamaterial with dual resonance

W. Zhang, A. Q. Liu, W. M. Zhu, E. P. Li, H. Tanoto, Q. Y. Wu, J. H. Teng, X. H. Zhang, M. L. J. Tsai, G. Q. Lo, and D. L. Kwong

Appl. Phys. Lett. 101, 151902 (2012); http://dx.doi.org/10.1063/1.4759029 (4 pages) | Cited 1 time

Online Publication Date: 9 October 2012

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We experimentally demonstrate a micromachined switchable metamaterial with dual mode resonance which is induced at THz regime under oblique incidence. Here, we explore, both theoretically and experimentally, the dynamic dual mode switching by reshaping metamaterial elements using micromachined actuators. The mode switching allows robust control over the transmission and the reflection of the metamaterial at 0.76 THz and 1.16 THz. Such switchable dual mode metamaterial promises wide applications in optical switches, tunable filters, and THz detectors.
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81.05.Xj Metamaterials for chiral, bianisotropic and other complex media
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Vanadium bound exciton luminescence in 6H-SiC

S. C. Wang, G. Wang, Y. Liu, L. B. Jiang, W. J. Wang, and X. L. Chen

Appl. Phys. Lett. 101, 151903 (2012); http://dx.doi.org/10.1063/1.4757883 (4 pages)

Online Publication Date: 9 October 2012

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The source responsible for V2 (1.398 eV) luminescence in 6H-SiC is recognized as a favorable defect for quantum information processing. However, the origin of V2 luminescence is still controversial. With careful photoluminescence measurements, it is found that V2 line shows clear bound exciton luminescence features. Furthermore, a mechanism based on neutral vanadium donor bound exciton is put forward to explain the origin of V2 luminescence. The results may provide some insights to understanding the nature of the promising qubit candidates in SiC.
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78.55.Hx Other solid inorganic materials
71.35.-y Excitons and related phenomena

Characterization and simulation of the first extensional mode of rectangular micro-plates in liquid media

T. Manzaneque, V. Ruiz, J. Hernando-García, A. Ababneh, H. Seidel, and J. L. Sánchez-Rojas

Appl. Phys. Lett. 101, 151904 (2012); http://dx.doi.org/10.1063/1.4758470 (4 pages) | Cited 2 times

Online Publication Date: 9 October 2012

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This Letter reports on the characterization of the first extensional mode of AlN-actuated mid-point supported resonant microplates in liquid media. Devices of different dimensions were fabricated and both optical and electrical measurements were performed in order to identify the modal shape under study and determine its quality factor. The dependence of the quality factor on the plate dimensions is discussed based on analytical and finite element simulation results. A quality factor of 100 was achieved in water at 3.8 MHz, and the suitability of this kind of device to work under high viscous condition (up to 51 cP) was demonstrated.
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47.85.Np Fluidics
47.11.Fg Finite element methods
47.61.-k Micro- and nano- scale flow phenomena

Deformation behaviors of InP pillars under uniaxial compression

Sheng-Rui Jian, T.-H. Sung, J. C. Huang, and Jenh-Yih Juang

Appl. Phys. Lett. 101, 151905 (2012); http://dx.doi.org/10.1063/1.4758479 (4 pages)

Online Publication Date: 9 October 2012

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We report the deformation behavior of single-crystal InP(100) micropillars, measuring about 1 μm in diameter and 2 μm in height, subjected to uniaxial compression at room temperature. The engineering stress-strain results indicated that the yield strength of InP pillar is about 2.5 GPa, and the presence of a drastic strain burst right after yielding. Cross-sectional transmission electron microscopy microstructural observations reveal the formation of extremely dense twins. The results indicate that the plastic deformation in InP micropillars is dominated by explosive generation of deformation twins under the high stress state.
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81.40.Lm Deformation, plasticity, and creep
62.20.fq Plasticity and superplasticity
61.72.Mm Grain and twin boundaries
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.fg Shape-memory effect; yield stress; superelasticity

Observation of polyamorphism in the phase change alloy Ge1Sb2Te4

B. Kalkan, S. Sen, J.-Y. Cho, Y.-C. Joo, and S. M. Clark

Appl. Phys. Lett. 101, 151906 (2012); http://dx.doi.org/10.1063/1.4759106 (5 pages)

Online Publication Date: 10 October 2012

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A high-pressure synchrotron x-ray diffraction study of the phase change alloy Ge1Sb2Te4 demonstrates the existence of a polyamorphic phase transition between the “as deposited” low density amorphous (LDA) phase and a high density amorphous (HDA) phase at ∼10 GPa. The entropy of the HDA phase is expected to be higher than that of the LDA phase resulting in a negative Clapeyron slope for this transition. These phase relations may enable the polyamorphic transition to play a role in the memory and data storage applications.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.K- Solid-solid transitions
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
68.60.Wm Other nonelectronic physical properties

The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition

Chun-Yen Peng, Yuan-An Liu, Wei-Lin Wang, Jr-Sheng Tian, and Li Chang

Appl. Phys. Lett. 101, 151907 (2012); http://dx.doi.org/10.1063/1.4759032 (4 pages) | Cited 1 time

Online Publication Date: 11 October 2012

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Here, the unambiguous effect of cooling rate on structural, electrical, and optical properties of a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition at 700 °C is reported. A high cooling rate (∼100 °C/min) can result in stripe morphology along m-direction and significant deformation on the epitaxial films of a-plane ZnO:Al with deteriorated crystallinity and significantly lowered resistivity. Also, photoluminescence spectra exhibit high intensities of excess violet and green emissions with low intensity of near band edge luminescence. Comparison with pure a-plane ZnO films is also presented.
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81.05.Dz II-VI semiconductors
81.15.Fg Pulsed laser ablation deposition
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
73.61.Ga II-VI semiconductors
61.66.Fn Inorganic compounds

Structural-dependent thermal conductivity of aluminium nitride produced by reactive direct current magnetron sputtering

B. E. Belkerk, A. Soussou, M. Carette, M. A. Djouadi, and Y. Scudeller

Appl. Phys. Lett. 101, 151908 (2012); http://dx.doi.org/10.1063/1.4757298 (4 pages)

Online Publication Date: 11 October 2012

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This Letter reports the thermal conductivity of aluminium nitride (AlN) thin-films deposited by reactive DC magnetron sputtering on single-crystal silicon substrates (100) with varying plasma and magnetic conditions achieving different crystalline qualities. The thermal conductivity of the films was measured at room temperature with the transient hot-strip technique for film thicknesses ranging from 100 nm to 4000 nm. The thermal conductivity was found to increase with the thickness depending on the synthesis conditions and film microstructure. The conductivity in the bulk region of the films, so-called intrinsic conductivity, and the boundary resistance were in the range [120–210] W m−1 K−1 and [2-30 × 10−9] K m2 W−1, respectively, in good agreement with microstructures analysed by x-ray diffraction, high-resolution-scanning-electron-microscopy, and transmission-electron-microscopy.
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81.05.Ea III-V semiconductors
81.15.Cd Deposition by sputtering
66.70.Df Metals, alloys, and semiconductors
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