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15 Oct 2012

Volume 101, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 101, 161105 (2012); http://dx.doi.org/10.1063/1.4744947 (4 pages)

Nan Niu, Tsung-Li Liu, Igor Aharonovich, Kasey J. Russell, Alexander Woolf, Thomas C. Sadler, Haitham A. R. El-Ella, Menno J. Kappers, Rachel A. Oliver, and Evelyn L. Hu
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Room temperature 1.5 μm light-emitting silicon diode with embedded β-FeSi2 nanocrystallites

N. G. Galkin, E. A. Chusovitin, D. L. Goroshko, A. V. Shevlyagin, A. A. Saranin, T. S. Shamirzaev, K. S. Zhuravlev, and A. V. Latyshev

Appl. Phys. Lett. 101, 163501 (2012); http://dx.doi.org/10.1063/1.4758485 (4 pages)

Online Publication Date: 15 October 2012

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Light-emitting silicon diode structures with embedded β-FeSi2 nanocrystallites have been fabricated using solid phase epitaxy and a combination of reactive deposition and solid phase epitaxy. Electroluminescence (EL) of the structures was studied over various temperatures and current densities under forward and reverse biases. The structures with nanocrystallites formed by the combined method exhibited EL at temperatures below 70 K only, suggesting the presence of a high concentration of defects—non-radiative centers. High-quality defect-free structures with nanocrystallites formed by solid phase epitaxy revealed intensive room temperature EL in energy range 0.76–1.08 eV at current densities as low as 1 A/cm2.
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85.60.Jb Light-emitting devices
81.15.Np Solid phase epitaxy; growth from solid phases
78.60.Fi Electroluminescence

Electrically driven metal-insulator switching in δ-KxV2O5 nanowires

Tai-Lung Wu, Adam A. Stabile, Christopher J. Patridge, Sarbajit Banerjee, and G. Sambandamurthy

Appl. Phys. Lett. 101, 163502 (2012); http://dx.doi.org/10.1063/1.4757571 (4 pages)

Online Publication Date: 15 October 2012

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Metal-insulator transition (MIT) in δ-KxV2O5 nanowires is studied via tuning temperature, voltage, and current. In the temperature-driven case, a massive drop in resistance over ∼ 4 orders of magnitude at ∼ 380 K is reported [C. J. Patridge et al., Nano Lett. 10, 2448 (2010)]. Our observation of electrically driven MIT results from a systematic study in any δ-MxV2O5 system (M is the intercalation ion). In the voltage-driven case, the threshold voltage follows an exponential relation with temperature. In the current-driven case, a negative differential resistance region is observed. These results suggest that δ-KxV2O5 is an interesting oxide system exhibiting strong electrically driven MIT and will hence be useful in several switching applications.
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72.60.+g Mixed conductivity and conductivity transitions
73.61.Ng Insulators
71.30.+h Metal-insulator transitions and other electronic transitions

Formation of SiGe nanocrystals embedded in Al2O3 for the application of write-once-read-many-times memory

Min-Lin Wu, Yung-Hsien Wu, Chia-Chun Lin, and Lun-Lun Chen

Appl. Phys. Lett. 101, 163503 (2012); http://dx.doi.org/10.1063/1.4760259 (4 pages)

Online Publication Date: 16 October 2012

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The structure of SiGe nanocrystals embedded in Al2O3 formed by sequential deposition of Al2O3/Si/Ge/Al2O3 and a subsequent annealing was confirmed by transmission electron microscopy and energy dispersive spectroscopy (EDS), and its application for write-once-read-many-times (WORM) memory devices was explored in this study. By applying a −10 V pulse for 1 s, a large amount of holes injected from Si substrate are stored in the nanocrystals and consequently, the current at +1.5 V increases by a factor of 104 as compared to that of the initial state. Even with a smaller −5 V pulse for 1 μs, a sufficiently large current ratio of 36 can still be obtained, verifying the low power operation. Since holes are stored in nanocrystals which are isolated from Si substrate by Al2O3 with good integrity and correspond to a large valence band offset with respect to Al2O3, desirable read endurance up to 105 cycles and excellent retention over 100 yr are achieved. Combining these promising characteristics, WORM memory devices are appropriate for high-performance archival storage applications.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.05.Hd Other semiconductors
61.72.Cc Kinetics of defect formation and annealing
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
84.30.Sk Pulse and digital circuits

Particle manipulation using an ultrasonic micro-gripper

Robert Walker, Ian Gralinski, Kok Keong Lay, Tuncay Alan, and Adrian Neild

Appl. Phys. Lett. 101, 163504 (2012); http://dx.doi.org/10.1063/1.4759127 (4 pages)

Online Publication Date: 17 October 2012

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We show that ultrasonic micro-grippers, 100 μm high segmented circular structures actuated with piezoelectric elements, can be used to establish a localised resonant pressure field within a fluid droplet, and hence allow effective manipulation of silica microspheres independently from the global boundaries of the fluid volume. We demonstrate through experiments and simulations that despite variations in the fluid shape and location, the method achieves particle clustering in consistent locations at fixed operating frequencies.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

High quality factor single-crystal diamond mechanical resonators

P. Ovartchaiyapong, L. M. A. Pascal, B. A. Myers, P. Lauria, and A. C. Bleszynski Jayich

Appl. Phys. Lett. 101, 163505 (2012); http://dx.doi.org/10.1063/1.4760274 (4 pages) | Cited 4 times

Online Publication Date: 18 October 2012

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Single-crystal diamond is a promising material for microelectromechanical systems (MEMs) because of its low mechanical loss, compatibility with extreme environments, and built-in interface to high-quality spin centers. But its use has been limited by challenges in processing and growth. We demonstrate a wafer bonding-based technique to form diamond on insulator, from which we make single-crystal diamond micromechanical resonators with mechanical quality factors as high as 338 000 at room temperature. Variable temperature measurements down to 10 K reveal a nonmonotonic dependence of quality factor on temperature. These resonators enable integration of single-crystal diamond into MEMs technology for classical and quantum applications.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
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