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15 Oct 2012

Volume 101, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 101, 161105 (2012); http://dx.doi.org/10.1063/1.4744947 (4 pages)

Nan Niu, Tsung-Li Liu, Igor Aharonovich, Kasey J. Russell, Alexander Woolf, Thomas C. Sadler, Haitham A. R. El-Ella, Menno J. Kappers, Rachel A. Oliver, and Evelyn L. Hu
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Hole transport in boron delta-doped diamond structures

G. Chicot, T. N. Tran Thi, A. Fiori, F. Jomard, E. Gheeraert, E. Bustarret, and J. Pernot

Appl. Phys. Lett. 101, 162101 (2012); http://dx.doi.org/10.1063/1.4758994 (4 pages) | Cited 1 time

Online Publication Date: 15 October 2012

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The temperature dependence of the hole sheet density and mobility of four capped delta boron doped [100]-oriented epilayers has been investigated experimentally and theoretically over a large temperature range (6 K<T<500 K). The influence of the parallel conduction through the thick buffer layer overgrown on the diamond substrate was shown not to be negligible near room temperature. This could lead to erroneous estimates of the hole mobility in the delta layer. None of the delta-layers studied showed any quantum confinement enhancement of the mobility, even the one which was thinner than 2 nm.
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72.20.Fr Low-field transport and mobility; piezoresistance
61.72.up Other materials
68.55.ag Semiconductors
73.61.Cw Elemental semiconductors

Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

A. Armstrong, T. A. Henry, D. D. Koleske, M. H. Crawford, K. R. Westlake, and S. R. Lee

Appl. Phys. Lett. 101, 162102 (2012); http://dx.doi.org/10.1063/1.4759003 (4 pages) | Cited 1 time

Online Publication Date: 16 October 2012

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The influence of threading dislocation (TD) density on electroluminescence and deep level defect incorporation in the multi-quantum well regions of InGaN/GaN light emitting diodes (LEDs) was investigated. LED efficiency increased with decreasing TD density. To elucidate the impact of TD density on deep level defect incorporation and resulting radiative efficiency, deep level optical spectroscopy and lighted capacitance voltage measurements were applied to the LEDs. Interestingly, the concentration of all observed deep levels decreased with TD density reduction, but their concentration also varied strongly with depth in the multi-quantum well region. These trends indicate that (1) TDs strongly influence point defect incorporation in InGaN/GaN LEDs and (2) TDs, possibly in conjunction with point defects, are detrimental to LED efficiency.
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85.60.Jb Light-emitting devices

Role of the Ge surface during the end of range dissolution

S. Boninelli, G. Impellizzeri, A. Alberti, F. Priolo, F. Cristiano, and C. Spinella

Appl. Phys. Lett. 101, 162103 (2012); http://dx.doi.org/10.1063/1.4759031 (4 pages) | Cited 1 time

Online Publication Date: 16 October 2012

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We investigated the structure of end-of-range (EOR) defects in Ge and the role played by the surface during their dissolution caused by annealing. Ge samples were amorphized with Ge+ ions at two different energies (30 and 100 keV) in order to induce, after solid phase epitaxial regrowth, the formation of EOR band at different depths. High resolution x-ray diffraction and transmission electron microscopy showed that the EOR population consists mainly on small defects and few dislocation loops lying on 〈001〉 planes. The deepest EOR defects are more stable during thermal annealing demonstrating the role of the surface during their dissolution.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
65.40.gp Surface energy
81.05.Cy Elemental semiconductors

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Helin Cao, Rama Venkatasubramanian, Chang Liu, Jonathan Pierce, Haoran Yang, M. Zahid Hasan, Yue Wu, and Yong P. Chen

Appl. Phys. Lett. 101, 162104 (2012); http://dx.doi.org/10.1063/1.4760226 (4 pages) | Cited 2 times

Online Publication Date: 17 October 2012

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Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and electronic properties of Bi2Te3 thin films deposited by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrates were characterized via x-ray diffraction (XRD), Raman spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and electronic transport measurements. The characteristic topological surface states with a single Dirac cone have been clearly revealed in the electronic band structure measured by ARPES, confirming the TI nature of the MOCVD Bi2Te3 films. Resistivity and Hall effect measurements have demonstrated relatively high bulk carrier mobility of ∼350 cm2/Vs at 300 K and ∼7400 cm2/Vs at 15 K. We have also measured the Seebeck coefficient of the films. Our demonstration of high quality topological insulator films grown by a simple and scalable method is of interests for both fundamental research and practical applications of thermoelectric and TI materials.
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68.55.ag Semiconductors
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
72.20.Pa Thermoelectric and thermomagnetic effects
72.20.My Galvanomagnetic and other magnetotransport effects

Microscopic characteristics of dynamic nuclear polarization and selective nuclear depolarization at the ν = 2/3 spin phase transition

M. H. Fauzi, S. Watanabe, and Y. Hirayama

Appl. Phys. Lett. 101, 162105 (2012); http://dx.doi.org/10.1063/1.4761955 (3 pages)

Online Publication Date: 19 October 2012

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The ability to manipulate the nuclear spin degree of freedom in semiconductor quantum structures is necessary for development of nuclear spintronics based on solid-state systems. Here, we developed a method to selectively depolarize the nuclear spin, the 〈+Iz〉 or the 〈−Iz〉 component, residing in a GaAs quantum well specimen after dynamic nuclear polarization by applying radio frequency pulse to either spin-unpolarized or spin-polarized nuclear magnetic resonance lines obtained at the spin transition of the filling ν = 2/3. Our results are evidence that the spin-unpolarized (spin-polarized) domain mediates the 〈+Iz〉 (〈−Iz〉) nuclear spin polarization.
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76.70.Fz Double nuclear magnetic resonance (DNMR), dynamical nuclear polarization
73.43.Nq Quantum phase transitions
76.60.-k Nuclear magnetic resonance and relaxation
72.25.Dc Spin polarized transport in semiconductors
73.63.Hs Quantum wells

Temperature-dependent properties of semimetal graphite-ZnO Schottky diodes

R. Yatskiv and J. Grym

Appl. Phys. Lett. 101, 162106 (2012); http://dx.doi.org/10.1063/1.4761958 (3 pages) | Cited 2 times

Online Publication Date: 19 October 2012

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Highly rectifying semimetal graphite/ZnO Schottky diodes with a low-ideality-factor (1.08 at 300 K) were investigated by temperature-dependent current-voltage measurements. The current transport was dominated by thermionic emission between 300 and 420 K and the extracted barrier height followed the Schottky-Mott relation. A Richardson constant (A** = 0.272 A cm−2K−2) extracted from the Richardson plot shows nearly linear characteristics in the temperature range 300–420 K.
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85.30.Kk Junction diodes
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