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22 Oct 2012

Volume 101, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 101, 171101 (2012); http://dx.doi.org/10.1063/1.4758996 (4 pages)

Wolfram H. P. Pernice and Harish Bhaskaran
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Stress evaluation in thin strained-Si film by polarized Raman spectroscopy using localized surface plasmon resonance

Hiroki Hashiguchi, Munehisa Takei, Daisuke Kosemura, and Atsushi Ogura

Appl. Phys. Lett. 101, 172101 (2012); http://dx.doi.org/10.1063/1.4761959 (3 pages)

Online Publication Date: 22 October 2012

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We evaluated the stress in a thin strained-Si film on relaxed SiGe on a surface-oxidized Si substrate using surface enhanced Raman scattering (SERS). The strained-Si peak was enhanced by the SERS technique. However, the strained-Si peak shifted toward a higher wavenumber while the peaks from the Si substrate were unchanged. We performed Raman measurement under the optical geometry in LO and TO phonon active conditions. From these measurements, it was clarified that the peak shift was attributed to the TO phonon peak that appeared, which was caused by the excitation of the z polar component in the near-field light.
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78.66.Db Elemental semiconductors and insulators
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Hv Other nonmetallic inorganics

Growth of wurtzite InN on bulk In2O3(111) wafers

Sergey Sadofev, YongJin Cho, Oliver Brandt, Manfred Ramsteiner, Raffaella Calarco, Henning Riechert, Steven C. Erwin, Zbigniew Galazka, Maxym Korytov, Martin Albrecht, Reinhard Uecker, and Roberto Fornari

Appl. Phys. Lett. 101, 172102 (2012); http://dx.doi.org/10.1063/1.4761985 (4 pages) | Cited 1 time

Online Publication Date: 22 October 2012

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A single phase InN epitaxial film is grown on a bulk In2O3(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In2O3 orientation relationship is found to be (0001) ‖ (111) and [1math00] ‖ [11math]. High quality of the layer is confirmed by the small widths of the x-ray rocking curves, the sharp interfaces revealed by transmission electron microscopy, the narrow spectral width of the Raman E2h vibrational mode, and the position of the photoluminescence band close to the fundamental band gap of InN.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
63.22.Dc Free films

Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser anneal

Phyllis Shi Ya Lim, Dong Zhi Chi, Xin Cai Wang, and Yee-Chia Yeo

Appl. Phys. Lett. 101, 172103 (2012); http://dx.doi.org/10.1063/1.4762003 (4 pages) | Cited 1 time

Online Publication Date: 22 October 2012

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A reduced effective electron Schottky barrier height ΦBn,eff of 0.37 eV is obtained at the epitaxial-NiGe2/Ge(100) interface. This is substantially lower than an ΦBn,eff of 0.60 eV obtained at the NiGe/Ge(100) interface. The Fermi-level pinning effect, which is commonly observed between metals and Ge, is reduced at the NiGe2/Ge(100) interface. This is attributed to the formation of epitaxial NiGe2 on Ge(100), which is expected to have a lower density of interface states due to reduced number of dangling bonds.
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73.40.Ns Metal-nonmetal contacts
73.20.At Surface states, band structure, electron density of states
68.55.at Other materials
61.72.Cc Kinetics of defect formation and annealing
73.30.+y Surface double layers, Schottky barriers, and work functions

Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition

Y. H. Chang, C. A. Lin, Y. T. Liu, T. H. Chiang, H. Y. Lin, M. L. Huang, T. D. Lin, T. W. Pi, J. Kwo, and M. Hong

Appl. Phys. Lett. 101, 172104 (2012); http://dx.doi.org/10.1063/1.4762833 (5 pages) | Cited 3 times

Online Publication Date: 22 October 2012

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High κ gate dielectrics of HfO2 and Al2O3 were deposited on molecular beam epitaxy-grown In0.2Ga0.8As pristine surface using in-situ atomic-layer-deposition (ALD) without any surface treatment or passivation layer. The ALD-HfO2/p-In0.2Ga0.8As interface showed notable reduction in the interfacial density of states (Dit), deduced from quasi-static capacitance-voltage and conductance-voltage (G-V) at room temperature and 100 °C. More significantly, the midgap peak commonly observed in the Dit(E) of ALD-oxides/In0.2Ga0.8As is now greatly diminished. The midgap Dit value decreases from ≥15 × 1012 eV−1 cm−2 for ALD-Al2O3 to ∼2–4 × 1012 eV−1 cm−2 for ALD-HfO2. Further, thermal stability at 850 °C was achieved in the HfO2/In0.2Ga0.8As, whereas C-V characteristics of Al2O3/p-In0.2Ga0.8As degraded after the high temperature annealing. From in-situ x-ray photoelectron spectra, the AsOx, which is not the oxidized state from the native oxide, but is an induced state from adsorption of trimethylaluminum and H2O, was found at the ALD-Al2O3/In0.2Ga0.8As interface, while that was not detected at the ALD-HfO2/In0.2Ga0.8As interface.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.Rv Passivation
77.55.dj For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)
68.43.Mn Adsorption kinetics

Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates

S. Minari, L. Cavigli, F. Sarti, M. Abbarchi, N. Accanto, G. Muñoz Matutano, S. Bietti, S. Sanguinetti, A. Vinattieri, and M. Gurioli

Appl. Phys. Lett. 101, 172105 (2012); http://dx.doi.org/10.1063/1.4761939 (4 pages) | Cited 1 time

Online Publication Date: 23 October 2012

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We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.35.-y Excitons and related phenomena
68.55.ag Semiconductors
78.47.jd Time resolved luminescence
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

M. Simma, G. Bauer, and G. Springholz

Appl. Phys. Lett. 101, 172106 (2012); http://dx.doi.org/10.1063/1.4759145 (5 pages)

Online Publication Date: 23 October 2012

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The band offsets of PbSe/Pb1−xEuxSe multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k·p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45±0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.
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73.21.Fg Quantum wells
81.07.St Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.20.-b Electron density of states and band structure of crystalline solids
73.21.La Quantum dots

Depressed scattering across grain boundaries in single crystal graphene

Jiao Chen, Zhi Jin, Peng Ma, Hong Wang, Haomin Wang, Jingyuan Shi, Songang Peng, Xinyu Liu, and Tianchun Ye

Appl. Phys. Lett. 101, 172107 (2012); http://dx.doi.org/10.1063/1.4758464 (4 pages)

Online Publication Date: 23 October 2012

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We investigated the electrical and quantum properties of single-crystal graphene (SCG) synthesized by chemical vapor deposition (CVD). Quantum Hall effect and Shubnikov de Hass oscillation, a distinguishing feature of a 2-dimensional electronic material system, were observed during the low temperature transport measurements. Decreased scattering from grain boundaries in SCG was proven through extracting information from weak localization theory. Our results facilitate understanding the electrical properties of SCG grown by CVD and its applications in high speed transistor and quantum devices.
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61.72.Mm Grain and twin boundaries
73.20.Fz Weak or Anderson localization
73.43.-f Quantum Hall effects
61.48.Gh Structure of graphene
72.80.Vp Electronic transport in graphene
81.05.ue Graphene

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

A. Dobbie, M. Myronov, R. J. H. Morris, A. H. A. Hassan, M. J. Prest, V. A. Shah, E. H. C. Parker, T. E. Whall, and D. R. Leadley

Appl. Phys. Lett. 101, 172108 (2012); http://dx.doi.org/10.1063/1.4763476 (4 pages)

Online Publication Date: 23 October 2012

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In this paper, we report a Hall mobility of one million in a germanium two-dimensional hole gas. The extremely high hole mobility of 1.1 × 106 cm2 V−1 s−1 at a carrier sheet density of 3 × 1011 cm−2 was observed at 12 K. This mobility is nearly an order of magnitude higher than any previously reported. From the structural analysis of the material and mobility modeling based on the relaxation time approximation, we attribute this result to the combination of a high purity Ge channel and a very low background impurity level that is achieved from the reduced-pressure chemical vapor deposition growth method.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
73.63.Hs Quantum wells
71.55.Cn Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Critical flux ratio of hydrogen radical to film precursor in microcrystalline silicon deposition for solar cells

Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

Appl. Phys. Lett. 101, 172109 (2012); http://dx.doi.org/10.1063/1.4764065 (3 pages) | Cited 1 time

Online Publication Date: 23 October 2012

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The properties of thin-film silicon grown by plasma enhanced chemical vapor deposition were investigated with respect to the flux ratio of hydrogen radical to film precursor. The absolute density and translational temperature of H radicals in SiH4/H2 capacitively coupled plasma were measured using vacuum ultraviolet laser absorption spectroscopy. The flux of effective H radicals to the surface reactions was estimated from the results. The flux of effective film precursor for deposition was estimated from the deposition rate, so that the critical flux ratio of H radicals to film precursor to obtain suitable film properties was identified to be approximately 65–70.
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88.40.jj Silicon solar cells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.40.Fy Semiconductors

Anomalous transport of Sb in laser irradiated Ge

E. Bruno, G. G. Scapellato, A. La Magna, M. Cuscunà, E. Napolitani, S. Boninelli, F. Priolo, G. Fortunato, and V. Privitera

Appl. Phys. Lett. 101, 172110 (2012); http://dx.doi.org/10.1063/1.4764069 (5 pages) | Cited 1 time

Online Publication Date: 24 October 2012

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Excimer laser annealing is shown to be very promising to promote Sb incorporation in Ge up to concentrations as high as 1 × 1021 at./cm3. However, we demonstrate that when Ge is melted by laser irradiation, a high excess of vacancies is generated in the molten region. These vacancies induce Sb electrical deactivation at the melt depth through the formation of Sbm-Vn complexes that act as a sink for further Sb atoms, even leading Sb to back-diffuse towards the surface, against the concentration gradient. These results are fundamental for the realization of new generation Ge-based micro and optoelectronic devices.
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79.20.Ds Laser-beam impact phenomena
61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.jd Vacancies
61.72.Cc Kinetics of defect formation and annealing
68.35.Fx Diffusion; interface formation

Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation

Shohei Hayashi, Yuji Fujita, Takahiro Kamikura, Kohei Sakaike, Muneki Akazawa, Mitsuhisa Ikeda, Hiroaki Hanafusa, and Seiichiro Higashi

Appl. Phys. Lett. 101, 172111 (2012); http://dx.doi.org/10.1063/1.4764522 (4 pages)

Online Publication Date: 26 October 2012

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Phase transformation of amorphous-silicon during millisecond annealing using micro-thermal-plasma-jet irradiation was directly observed using a high-speed camera with microsecond time resolution. An oval-shaped molten-silicon region adjacent to the solid phase crystallization region was clearly observed, followed by lateral large grain growth perpendicular to a liquid-solid interface. Furthermore, leading wave crystallization (LWC), which showed intermittent explosive crystallization, was discovered in front of the moving molten region. The growth mechanism of LWC has been investigated on the basis of numerical simulation implementing explosive movement of a thin liquid layer driven by released latent heat diffusion in a lateral direction.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.K- Solid-solid transitions
61.72.Cc Kinetics of defect formation and annealing
61.80.-x Physical radiation effects, radiation damage
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
66.30.-h Diffusion in solids
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