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22 Oct 2012

Volume 101, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 101, 171101 (2012); http://dx.doi.org/10.1063/1.4758996 (4 pages)

Wolfram H. P. Pernice and Harish Bhaskaran
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Electronic states and curved surface effect of silicon quantum dots

Wei-Qi Huang, Zhong-Mei Huang, Han-Qiong Cheng, Xin-Jian Miao, Qin Shu, Shi-Rong Liu, and Chao-Jian Qin

Appl. Phys. Lett. 101, 171601 (2012); http://dx.doi.org/10.1063/1.4761945 (4 pages)

Online Publication Date: 22 October 2012

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The calculation results show that the bonding energy and electronic states of silicon quantum dots (Si QDs) are different on various curved surfaces (CS), for example, a Si-O-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. Curved surface breaks symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in band gap. The red-shifting of photoluminescence spectra on smaller silicon quantum dots can be explained by CS effect. In CS effect, surface curvature is determined by the shape of Si QDs or silicon nanostructures, which is independent of their sizes. The CS effect has the interesting fundamental physical properties in nanophysics as that of quantum confinement effect.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Ap Elemental semiconductors
73.20.At Surface states, band structure, electron density of states
78.67.Hc Quantum dots
81.07.Ta Quantum dots

Optimal hydrogenated amorphous silicon/silicon nitride bilayer passivation of n-type crystalline silicon using response surface methodology

Dmitri S. Stepanov and Nazir P. Kherani

Appl. Phys. Lett. 101, 171602 (2012); http://dx.doi.org/10.1063/1.4764011 (4 pages)

Online Publication Date: 23 October 2012

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This study reports the highest quality surface passivation achieved with hydrogenated amorphous silicon and amorphous silicon nitride (SiNx) bilayer stack deposited using plasma enhanced chemical vapour deposition on 1–2 Ωcm n-type crystalline silicon. The SiNx deposition conditions were investigated using response surface methodology (RSM). Optimized deposition parameters obtained from the RSM study yielded a low surface recombination velocity (SRV) of 3.5 cm/s. Interface defect and charge densities, inferred using the interface dangling bond recombination model, revealed a strong influence of charge on the SRV reduction. The model predicts a lower SRV of 1.5 cm/s for the bilayer passivation scheme.
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81.65.Rv Passivation
02.60.-x Numerical approximation and analysis
71.55.-i Impurity and defect levels
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Growth mechanisms of in situ TiC in laser melted Ti–Si–C ternary system

Dongdong Gu, Donghua Dai, Guoquan Zhang, and Hongqiao Wang

Appl. Phys. Lett. 101, 171603 (2012); http://dx.doi.org/10.1063/1.4764055 (5 pages) | Cited 1 time

Online Publication Date: 24 October 2012

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Laser rapid melting and recrystallization of in situ crystals is an interesting issue in research fields of applied physics and materials science. This letter investigated the growth mechanisms of in situ dendritic TiC from laser melted Ti–Si–C ternary system. The growth of TiC dendritic trunks was kinetically dependent on laser scan speed and was influenced negligibly by laser power. A higher scan speed produced the elongated dendritic trunks. The development of TiC dendritic arms was temperature-dependent. An increase in laser energy density by increasing laser power or decreasing scan speed enhanced the growth of primary and even secondary dendritic arms.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
42.62.-b Laser applications
64.70.dj Melting of specific substances

Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

Bénédicte Demaurex, Stefaan De Wolf, Antoine Descoeudres, Zachary Charles Holman, and Christophe Ballif

Appl. Phys. Lett. 101, 171604 (2012); http://dx.doi.org/10.1063/1.4764529 (4 pages) | Cited 2 times

Online Publication Date: 25 October 2012

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Damage of the hydrogenated amorphous/crystalline silicon interface passivation during transparent conductive oxide sputtering is reported. This occurs in the fabrication process of silicon heterojunction solar cells. We observe that this damage is at least partially caused by luminescence of the sputter plasma. Following low-temperature annealing, the electronic interface properties are recovered. However, the silicon-hydrogen configuration of the amorphous silicon film is permanently changed, as observed from infra-red absorbance spectra. In silicon heterojunction solar cells, although the as-deposited film's microstructure cannot be restored after sputtering, no significant losses are observed in their open-circuit voltage.
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88.40.jj Silicon solar cells

Temperature and pressure dependent Mott potentials and their influence on self-limiting oxide film growth

Na Cai, Guangwen Zhou, Kathrin Müller, and David E. Starr

Appl. Phys. Lett. 101, 171605 (2012); http://dx.doi.org/10.1063/1.4764552 (4 pages)

Online Publication Date: 25 October 2012

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Classic Cabrera-Mott theory stipulates that the limited oxide-film growth results from electron tunneling from the metal through the oxide film to adsorbed oxygen. This leads to an electric field across the oxide film that assists ion migration for low-temperature oxide-film growth. Here, we show that the field-driven oxide-film growth can be manipulated via the temperature and pressure of oxidation. The magnitude of the self-generated electric field depends on the oxygen surface coverage that exhibits a Langmuir isotherm behavior with changes in temperature and oxygen pressure. These observations demonstrate the ability to tune an interfacial reaction via self-adaptation to its environment.
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68.55.A- Nucleation and growth
66.30.Qa Electromigration
68.43.Mn Adsorption kinetics
73.40.Gk Tunneling
81.65.Mq Oxidation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
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