APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

29 Oct 2012

Volume 101, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 183101 (2012); http://dx.doi.org/10.1063/1.4761935 (4 pages)

S. J. Kim, J. J. Lee, H. J. Kang, J. B. Choi, Y.-S. Yu, Y. Takahashi, and D. G. Hasko
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Short channel effects on gallium nitride/gallium oxide nanowire transistors

J.-W. Yu, P.-C. Yeh, S.-L. Wang, Y.-R. Wu, M.-H. Mao, H.-H. Lin, and L.-H. Peng

Appl. Phys. Lett. 101, 183501 (2012); http://dx.doi.org/10.1063/1.4764554 (4 pages)

Online Publication Date: 29 October 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Gallium nitride/gallium oxide GaN/Ga2O3 nanowire metal-oxide-semiconductor field-effect-transistors are shown to operate at an average electron velocity of ∼1.24 × 107 cm/s and threshold-voltage roll-off of −0.2 V as the transistor gate length Lg reduced from 500 to 50 nm. Improvement of saturation current to 120 μA and unity current/power-gain cut-off frequency to 150/180 GHz is observed on Lg = 50 nm devices. Our study reveals the advantages of using (i) polarization-induced positive charges and high-k dielectric at the {1math0math}GaN/{002}Ga2O3 interface to provide carrier confinement and to shield the drain field, and (ii) polarization-induced negative charges at the (0001)GaN/sapphire interface to form a back-barrier to suppress leakage and improve the short-channel transport properties.
Show PACS
85.30.Tv Field effect devices
85.75.Hh Spin polarized field effect transistors
81.07.Gf Nanowires

Design rules of (Mg,Zn)O-based thin-film transistors with high-κ WO3 dielectric gates

M. Lorenz, A. Reinhardt, H. von Wenckstern, and M. Grundmann

Appl. Phys. Lett. 101, 183502 (2012); http://dx.doi.org/10.1063/1.4764559 (4 pages) | Cited 2 times

Online Publication Date: 29 October 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a study on the design and optimization of metal-insulator-semiconductor field-effect transistors based on (Mg,Zn)O channel material with WO3 dielectric. The thickness of the dielectric and of the channel layer were adjusted independently to minimize the off-current density joff, the subthreshold slope (SS), and to modify the turn-on voltage. For optimized dielectric thickness, values of joff<10−8 A/cm2 and SS = 68 mV/decade were obtained. The variation of the (Mg,Zn)O-film thickness gives rise to a shift of the turn-on voltage: For 21 nm thick channels Von = −1.68V is obtained and by reducing the thickness to 8.6 nm Von = −0.27V. Using a Pt gate metal, normally off transistors with Von = 0.19V were realized.
Show PACS
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Defeating the trade-off between process complexity and electrical performance with vertical zinc oxide transistors

S. F. Nelson, D. H. Levy, and L. W. Tutt

Appl. Phys. Lett. 101, 183503 (2012); http://dx.doi.org/10.1063/1.4765340 (4 pages) | Cited 2 times

Online Publication Date: 29 October 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Short-channel devices can show high performance, but typically have difficult processing and alignment steps. We show here a simple low-temperature process to produce sub-micrometer-channel zinc-oxide thin-film transistors. The thickness of the gate metal defines the channel length, while a combination of conformal and non-conformal depositions create the channel and electrodes. Layer-to-layer alignment is noncritical. With mobility values ten times greater than amorphous silicon, high on/off current ratios at low voltage, good yield, and good thermal sinking in operation, these vertical transistors unite the performance of metal oxide semiconductors with the advantages of short-channel devices.
Show PACS
85.30.Tv Field effect devices

The improved imprint effect in poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

Ying Hou, Zhaoyue Lü, Yuan Zhang, Guoqiang Xu, and Haisheng Xu

Appl. Phys. Lett. 101, 183504 (2012); http://dx.doi.org/10.1063/1.4766176 (4 pages) | Cited 1 time

Online Publication Date: 2 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The imprint behaviors for poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films with electroactive interlayers have been studied. The different electroactive polymers are used as the interlayer between P(VDF-TrFE) and metal electrodes. It is found that the smaller voltage shift is observed for the samples with electroactive interlayers and the imprint properties are improved substantially after the electroactive interlayers are introduced. The charge trap accumulation in P(VDF-TrFE) films without and with interlayers is analyzed and it is thought that the traps would be partially compensated by the free charges from the electroactive interlayers, illustrating the importance of the appropriate interlayer materials.
Show PACS
82.45.Fk Electrodes
68.55.am Polymers and organics
68.65.Ac Multilayers

Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

Yanzhen Wang, Burt Fowler, Yen-Ting Chen, Fei Xue, Fei Zhou, Yao-Feng Chang, and Jack C. Lee

Appl. Phys. Lett. 101, 183505 (2012); http://dx.doi.org/10.1063/1.4765356 (4 pages)

Online Publication Date: 2 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electroforming voltage (Vef) of silicon oxide resistive random access memories treated with post-deposition-anneal (PDA) and/or post-metal-anneal in different gas ambients is compared. Secondary ion mass spectroscopy result shows significant incorporation of H/D atoms in SiOx after anneals in H2/N2 and D2/N2. Vef is significantly reduced after anneal in H2/N2 or D2/N2, but D2/N2 anneal results in even lower Vef, which could be due to more stable Si passivation in the Si-D/O+ pair as compared to the Si-H/O+ pair. On and off state currents are measured at 200 mV gate bias every 60 s for a total time of 6000 s with results showing good data retention for both on and off states. On and off state currents are observed to decrease when using PDA resulting in lower overall power dissipation.
Show PACS
84.30.Sk Pulse and digital circuits

Silicon nanowire based Pirani sensor for vacuum measurements

T. Brun, D. Mercier, A. Koumela, C. Marcoux, and L. Duraffourg

Appl. Phys. Lett. 101, 183506 (2012); http://dx.doi.org/10.1063/1.4765665 (4 pages)

Online Publication Date: 2 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nano-Pirani vacuum gauges based on the physical properties of suspended silicon nanowires have been fabricated and characterized. With a 160 × 260 nm2 rectangular section and a 5.2 μm length, they are 50 times smaller than the smallest silicon based vacuum sensor and they exhibits much lower power consumption. The nano-Pirani constructed are capable of measuring pressures from 50 to 105 Pa. Moreover, their fabrication is compatible with microelectronic and micromachining fabrication techniques making them suitable for in-situ monitoring of micro and nano systems vacuum packaging.
Show PACS
07.30.Dz Vacuum gauges
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close