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29 Oct 2012

Volume 101, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 183101 (2012); http://dx.doi.org/10.1063/1.4761935 (4 pages)

S. J. Kim, J. J. Lee, H. J. Kang, J. B. Choi, Y.-S. Yu, Y. Takahashi, and D. G. Hasko
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Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks

Z. Essa, C. Gaumer, A. Pakfar, M. Gros-Jean, M. Juhel, F. Panciera, P. Boulenc, C. Tavernier, and F. Cristiano

Appl. Phys. Lett. 101, 182901 (2012); http://dx.doi.org/10.1063/1.4764558 (5 pages) | Cited 1 time

Online Publication Date: 29 October 2012

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In this study, TiN/La2O3/HfSiON/SiO2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed on these samples show a time diffusion saturation of La in the high-k insulator, indicating an La front immobilization due to LaSiO formation at the high-k/interfacial layer. Based on the SIMS data, a technology computer aided design (TCAD) diffusion model including La time diffusion saturation effect was developed.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Rt Time of flight mass spectrometry
77.55.df For silicon electronics
61.72.Cc Kinetics of defect formation and annealing

Ultra-sensitive magnetoelectric microcantilever at a low frequency

Dong Gun Lee, Sung Man Kim, Yong Kyung Yoo, Jun Hyun Han, Dong Won Chun, Yu-Chan Kim, Jinseok Kim, Kyo Seon Hwang, Tae Song Kim, Won Woo Jo, Hyungsuk Kim, Seung-Ho Song, and Jeong Hoon Lee

Appl. Phys. Lett. 101, 182902 (2012); http://dx.doi.org/10.1063/1.4764944 (4 pages)

Online Publication Date: 1 November 2012

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Here, we propose the device platform of energy domain transfer using a magnetoelectric microcantilever. By incorporating Tb0.3Dy0.7Fe1.9 (Terfenol-D) magnetostrictive materials onto a Pb(Zr0.52Ti0.48)O3 (PZT) piezoelectric microcantilever, we demonstrated energy conversion from the magnetic to the electric domain. By measuring the charge signal from a PZT layer under variable dc magnetic field at constant 60 Hz AC magnetic field, we acquired the magnetoelectric coefficient of 24.4 V/cm·Oe. The proposed magnetoelectric microcantilever enables the generation of a minimum detectable DC magnetic field up to 1 × 10−12 T at off-resonance.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Fully developed contact angle change of a droplet in liquid actuated by dielectric force

Chih-Cheng Yang, Lin Yang, C. Gary Tsai, Patrick Hongchang Jou, and J. Andrew Yeh

Appl. Phys. Lett. 101, 182903 (2012); http://dx.doi.org/10.1063/1.4759112 (4 pages) | Cited 1 time

Online Publication Date: 2 November 2012

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The non-saturation phenomenon of contact angle change of a nonconductive droplet in an immiscible dielectric liquid with iso-density is demonstrated using the dielectric force due to the difference of the two dielectric constants. The concentric electrode design permits the dielectric force exerted at various contact angles. The droplet fully develops from 22° to 176° (nearly spherical) in contact angle as the voltages tuned from 0 to 215 Vrms. The contact angle change was found to behave almost linearly with respect to voltage by experiments. The dielectric force in the liquid/liquid interface was further simulated at the aspects of energy distribution, force distribution, and electric fields, found in a good agreement with experimental results.
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68.03.Cd Surface tension and related phenomena
77.22.Ch Permittivity (dielectric function)
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