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29 Oct 2012

Volume 101, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 101, 183101 (2012); http://dx.doi.org/10.1063/1.4761935 (4 pages)

S. J. Kim, J. J. Lee, H. J. Kang, J. B. Choi, Y.-S. Yu, Y. Takahashi, and D. G. Hasko
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High performance radial p-n junction solar cell based on silicon nanopillar array with enhanced decoupling mechanism

Bingfei Dou, Rui Jia, Haofeng Li, Chen Chen, Wuchang Ding, Yanlong Meng, Zhao Xing, Xinyu Liu, and Tianchun Ye

Appl. Phys. Lett. 101, 183901 (2012); http://dx.doi.org/10.1063/1.4764942 (4 pages)

Online Publication Date: 29 October 2012

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High performance radial p-n junction solar cells based on silicon nanopillar array were synthesized from p-type silicon substrates and compared with planar cell. These radial p-n junction cells exhibited considerable higher short-circuit current, due to their unique carriers' decoupling mechanism. After the electrode enhancement via light induced plating, a best efficiency of near 12% was achieved for radial p-n junction solar cell, which is better than the planar control cell.
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88.40.H- Solar cells (photovoltaics)

Enhanced thermoelectric properties of bulk TiNiSn via formation of a TiNi2Sn second phase

Jason E. Douglas, Christina S. Birkel, Mao-Sheng Miao, Chris J. Torbet, Galen D. Stucky, Tresa M. Pollock, and Ram Seshadri

Appl. Phys. Lett. 101, 183902 (2012); http://dx.doi.org/10.1063/1.4765358 (4 pages) | Cited 1 time

Online Publication Date: 2 November 2012

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The effect of phase-segregated Heusler TiNi2Sn on high temperature thermoelectric properties of bulk half-Heusler TiNiSn has been studied. In samples expressed by the composition TiNi1+xSn, a significant decrease in thermal conductivity (between 10% and 30%) is observed for two-phase TiNi1.15Sn, despite the second-phase particles existing at the micrometer scale; a 50% increase in the electrical conductivity is also measured. These result in a maximum figure of merit, ZT, of 0.44 at 800 K, which is 25% greater than is observed for the x = 0 sample. Density functional calculations of TiNiSn and TiNi2Sn suggest that the latter should deplete carriers at 0 K.
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72.20.Pa Thermoelectric and thermomagnetic effects
64.75.Qr Phase separation and segregation in semiconductors
66.70.Df Metals, alloys, and semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
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