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29 Oct 2012

Volume 101, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 183101 (2012); http://dx.doi.org/10.1063/1.4761935 (4 pages)

S. J. Kim, J. J. Lee, H. J. Kang, J. B. Choi, Y.-S. Yu, Y. Takahashi, and D. G. Hasko
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Multiplexed dispersive readout of superconducting phase qubits

Yu Chen, D. Sank, P. O'Malley, T. White, R. Barends, B. Chiaro, J. Kelly, E. Lucero, M. Mariantoni, A. Megrant, C. Neill, A. Vainsencher, J. Wenner, Y. Yin, A. N. Cleland, et al.

Appl. Phys. Lett. 101, 182601 (2012); http://dx.doi.org/10.1063/1.4764940 (4 pages)

Online Publication Date: 1 November 2012

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We introduce a frequency-multiplexed readout scheme for superconducting phase qubits. Using a quantum circuit with four phase qubits, we couple each qubit to a separate lumped-element superconducting readout resonator, with the readout resonators connected in parallel to a single measurement line. The readout resonators and control electronics are designed so that all four qubits can be read out simultaneously using frequency multiplexing on the one measurement line. This technology provides a highly efficient and compact means for reading out multiple qubits, a significant advantage for scaling up to larger numbers of qubits.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

K. Hoummada, F. Dahlem, T. Kociniewski, J. Boulmer, C. Dubois, G. Prudon, E. Bustarret, H. Courtois, D. Débarre, and D. Mangelinck

Appl. Phys. Lett. 101, 182602 (2012); http://dx.doi.org/10.1063/1.4760261 (4 pages)

Online Publication Date: 1 November 2012

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Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline silicon in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at the atomic scale. The boron spatial distribution is found to be compatible with local density of states measurements performed by scanning tunneling spectroscopy. These results combined with the observations of very low impurity level and of a sharp two-dimensional interface between doped and undoped regions show that the Si:B material obtained by GILD is a well-defined random substitutional alloy endowed with promising superconducting properties.
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74.78.-w Superconducting films and low-dimensional structures
42.62.-b Laser applications
64.75.Bc Solubility
61.72.uf Ge and Si
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