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5 Nov 2012

Volume 101, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 193101 (2012); http://dx.doi.org/10.1063/1.4764508 (4 pages)

Ryan T. Tucker, Allan L. Beaudry, Joshua M. LaForge, Michael T. Taschuk, and Michael J. Brett
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Influence of cross-sectional geometry on the sensitivity and hysteresis of liquid-phase electronic pressure sensors

Yong-Lae Park, Daniel Tepayotl-Ramirez, Robert J. Wood, and Carmel Majidi

Appl. Phys. Lett. 101, 191904 (2012); http://dx.doi.org/10.1063/1.4767217 (4 pages) | Cited 1 time

Online Publication Date: 8 November 2012

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Cross-sectional geometry influences the pressure-controlled conductivity of liquid-phase metal channels embedded in an elastomer film. These soft microfluidic films may function as hyperelastic electric wiring or sensors that register the intensity of surface pressure. As pressure is applied to the elastomer, the cross-section of the embedded channel deforms, and the electrical resistance of the channel increases. In an effort to improve sensitivity and reduce sensor nonlinearity and hysteresis, we compare the electrical response of 0.25 mm2 channels with different cross-sectional geometries. We demonstrate that channels with a triangular or concave cross-section exhibit the least nonlinearity and hysteresis over pressures ranging from 0 to 70 kPa. These experimental results are in reasonable agreement with predictions made by theoretical calculations that we derive from elasticity and Ohm's Law.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems

Infrared characteristics of VO2 thin films for smart window and laser protection applications

Zhangli Huang, Sihai Chen, Chaohong Lv, Ying Huang, and Jianjun Lai

Appl. Phys. Lett. 101, 191905 (2012); http://dx.doi.org/10.1063/1.4766287 (4 pages) | Cited 2 times

Online Publication Date: 8 November 2012

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Vanadium dioxide (VO2) films with a low semiconductor-to-metal transition temperature of 45 °C were fabricated through direct current magnetron sputtering followed by a post-annealing. Atomic force microscopy measurements show that the VO2 grain size is about one hundred of nanometers. Infrared (IR) characteristic is well investigated by applying a He-Ne laser power intensity measurement, and the result reveals that the VO2 film exhibits excellent IR switching property. Furthermore, solar smart window and laser protection experiments demonstrate that the obtained VO2 thin film is a promising material for the application in related fields.
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42.70.-a Optical materials
42.79.Ci Filters, zone plates, and polarizers
42.79.Wc Optical coatings
78.30.Hv Other nonmetallic inorganics
78.66.-w Optical properties of specific thin films
81.15.Cd Deposition by sputtering
81.40.Gh Other heat and thermomechanical treatments

Scintillation property of rare earth-free SnO-doped oxide glass

Hirokazu Masai, Takayuki Yanagida, Yutaka Fujimoto, Masanori Koshimizu, and Toshinobu Yoko

Appl. Phys. Lett. 101, 191906 (2012); http://dx.doi.org/10.1063/1.4766340 (4 pages)

Online Publication Date: 8 November 2012

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The authors have demonstrated scintillation of rare earth (RE)-free Sn-doped oxide glass by excitation of ionizing radiation. It is notable that light emission is attained for RE-free transparent glass due to s2-sp transition of Sn2+ centre and the emission correlates with the excitation band at 20 eV. We have also demonstrated that excitation band of emission centre can be tuned by the chemical composition of the host glass. The present result is valuable not only for design of RE-free inorganic amorphous oxide scintillator but also for revealing the band structure of oxide glass by irradiation of ionizing radiation.
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78.70.Ps Scintillation
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.55.Qr Amorphous materials; glasses and other disordered solids
82.80.-d Chemical analysis and related physical methods of analysis
64.70.P- Glass transitions of specific systems

Tensile and fatigue behaviors of printed Ag thin films on flexible substrates

Gi-Dong Sim, Sejeong Won, and Soon-Bok Lee

Appl. Phys. Lett. 101, 191907 (2012); http://dx.doi.org/10.1063/1.4766447 (4 pages) | Cited 1 time

Online Publication Date: 8 November 2012

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Flexible electronics using nanoparticle (NP) printing has been highlighted as a key technology enabling eco-friendly, low-cost, and large-area fabrication. For NP-based printing to be used as a successive alternative to photolithography and vacuum deposition, stretchability and long term reliability must be considered. This paper reports the stretchability and fatigue behavior of 100 nm thick NP-based silver thin films printed on polyethylene-terephthalate substrate and compares it to films deposited by electron-beam evaporation. NP-based films show stretchability and fatigue life comparable to evaporated films with intergranular fracture as the dominant failure mechanism.
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81.05.Bx Metals, semimetals, and alloys
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.me Fatigue
62.20.mm Fracture
68.60.Bs Mechanical and acoustical properties

An all optical mapping of the strain field in GaAsN/GaAsN:H wires

M. Geddo, E. Giulotto, M. S. Grandi, M. Patrini, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini

Appl. Phys. Lett. 101, 191908 (2012); http://dx.doi.org/10.1063/1.4766285 (4 pages)

Online Publication Date: 9 November 2012

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GaAsN/GaAsN:H heterostructures were made by an in-plane selective hydrogen incorporation controlled by H-opaque metallic masks. The strain field and hydrogen distributions in GaAsN micro-sized wires thus obtained have been mapped by an all optical procedure that combines micro-Raman scattering and photoreflectance spectroscopy. The strain field is related to the formation of N-H complexes along the hydrogen diffusion profile with an ensuing expansion of the GaAsN lattice whose patterning generates an anisotropic stress in the sample growth plane. These results highlight a powerful non-invasive tool to simultaneously determine both the H diffusion profile and the related strain field distribution.
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78.30.Fs III-V and II-VI semiconductors
66.30.-h Diffusion in solids
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Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

E. García-Hemme, R. García-Hernansanz, J. Olea, D. Pastor, A. del Prado, I. Mártil, and G. Gónzalez-Díaz

Appl. Phys. Lett. 101, 192101 (2012); http://dx.doi.org/10.1063/1.4766171 (5 pages)

Online Publication Date: 6 November 2012

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We have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.56.-a Photoconduction and photovoltaic effects
71.30.+h Metal-insulator transitions and other electronic transitions
71.55.Cn Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
72.80.Cw Elemental semiconductors

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

T. Hofmann, P. Kühne, S. Schöche, Jr-Tai Chen, U. Forsberg, E. Janzén, N. Ben Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva

Appl. Phys. Lett. 101, 192102 (2012); http://dx.doi.org/10.1063/1.4765351 (4 pages)

Online Publication Date: 6 November 2012

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The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22±0.01)m0 at 1.5 K to (0.36±0.03)m0 at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.30.Fs III-V and II-VI semiconductors
78.70.Gq Microwave and radio-frequency interactions
85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects

Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy

Ph. Ebert, S. Landrock, Y. P. Chiu, U. Breuer, and R. E. Dunin-Borkowski

Appl. Phys. Lett. 101, 192103 (2012); http://dx.doi.org/10.1063/1.4765360 (4 pages) | Cited 2 times

Online Publication Date: 6 November 2012

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The effect of counterdoping on the Be dopant distribution in delta (δ)-doped layers embedded in Si-doped and intrinsic GaAs is investigated by cross-sectional scanning tunneling microscopy. δ-doped layers in intrinsic GaAs exhibit a large spreading, whereas those surrounded by Si-doped GaAs remain spatially localized. The different spreading is explained by the Fermi-level pinning at the growth surface, which leads to an increased Ga vacancies concentration with increasing Si counterdoping. The Ga vacancies act as sinks for the diffusing Be dopant atoms, hence retarding the spreading.
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61.72.uj III-V and II-VI semiconductors
61.72.jd Vacancies

Effect of current filament characteristics on the output current of high-gain photoconductive semiconductor switch

Zenggong Jiang, Wei Shi, Lei Hou, Huaimeng Gui, Weili Ji, Cheng Ma, and Lin Zhang

Appl. Phys. Lett. 101, 192104 (2012); http://dx.doi.org/10.1063/1.4761999 (4 pages)

Online Publication Date: 8 November 2012

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The output current characteristics of a high-gain photoconductive semiconductor switch (PCSS) were analyzed under different bias voltages. The results indicate that the voltages on different discharge regions of current filament are dynamic, which determines the output current transient characteristics. The physical processes of anode region influenced by the bias voltage of PCSS dominate that the output current presents the characteristic of lock-on or overshoot. The quench of current filament is determined by the external circuit and the carrier recombination process, resulting in the turn-off of high-gain PCSS.
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85.60.Bt Optoelectronic device characterization, design, and modeling
85.30.De Semiconductor-device characterization, design, and modeling
84.32.Dd Connectors, relays, and switches

Second order nonlinear optical properties of AIBIIIC2VI chalcopyrite semiconductors

V. Kumar, S. K. Tripathy, and Vijeta Jha

Appl. Phys. Lett. 101, 192105 (2012); http://dx.doi.org/10.1063/1.4765058 (5 pages) | Cited 1 time

Online Publication Date: 8 November 2012

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The second-order nonlinear optical (NLO) properties of ternary chalcopyrite semiconductors have been studied. The NLO tensor coefficients (d36) of the A-C and B-C bonds in AIBIIIC2VI semiconductors and their total contribution to whole family of these compounds have been calculated at 10.6 μm using plasma oscillations theory of solids. The calculated values are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been found between them.
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78.66.Li Other semiconductors
77.22.Ch Permittivity (dielectric function)

High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 101, 192106 (2012); http://dx.doi.org/10.1063/1.4766732 (4 pages) | Cited 2 times

Online Publication Date: 9 November 2012

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High quality AlN epilayers were grown on SiC substrates using double layer AlN buffers growth method by metal organic chemical vapor deposition and exploited as active deep ultraviolet optoelectronic materials through the demonstration of AlN Schottky barrier photodetectors. The grown AlN epilayers have smooth surfaces, low etch-pit density, narrow width of x-ray rocking curves, and strong band edge photoluminescence emission with low impurity emissions. AlN Schottky photodetectors are shown to possess outstanding features including extremely low dark current and high breakdown voltage.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
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Magnetic field sensor with voltage-tunable sensing properties

Witold Skowroński, Piotr Wiśniowski, Tomasz Stobiecki, Susana Cardoso, Paulo P. Freitas, and Sebastiaan van Dijken

Appl. Phys. Lett. 101, 192401 (2012); http://dx.doi.org/10.1063/1.4765350 (3 pages)

Online Publication Date: 5 November 2012

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We report on a magnetic field sensor based on CoFeB/MgO/CoFeB magnetic tunnel junctions. By taking advantage of the perpendicular magnetic anisotropy of the MgO/CoFeB interface, the magnetization of the sensing layer is tilted out-of-plane which results in a linear magnetoresistance response to in-plane magnetic fields. The application of a bias voltage across the MgO tunnel barrier of the sensor affects the magnetic anisotropy and thereby its sensing properties. We propose a voltage-tunable magnetic field sensor design that allows for active control of the sensitivity and the operating field range by the strength and polarity of the applied bias voltage.
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07.55.-w Magnetic instruments and components

Application of local transverse fields for domain wall control in ferromagnetic nanowire arrays

Andrew Kunz and Jesse Vogeler-Wunsch

Appl. Phys. Lett. 101, 192402 (2012); http://dx.doi.org/10.1063/1.4766173 (4 pages)

Online Publication Date: 6 November 2012

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In ferromagnetic nanowire arrays, where each wire contains multiple domain walls, it will be necessary to select an individual domain wall (DW) to move. In the field driven DW case, the field is typically applied globally affecting all of the domain walls in the system. We present micromagnetic simulation results demonstrating selectivity and control of an individual DW in such an array of nanowires using a combination of global and locally generated magnetic fields. Arranging the orientation of the local field allows for selectivity of a specific DW and its controllable movement to a new location.
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75.60.Ch Domain walls and domain structure
75.75.-c Magnetic properties of nanostructures
75.78.Cd Micromagnetic simulations
75.50.-y Studies of specific magnetic materials

Suppression of spin relaxation in rubrene nanowire spin valves

Kazi M. Alam, Srikrishna C. Bodepudi, Ryan Starko-Bowes, and Sandipan Pramanik

Appl. Phys. Lett. 101, 192403 (2012); http://dx.doi.org/10.1063/1.4765655 (5 pages)

Online Publication Date: 7 November 2012

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We report spin valve measurements performed on vertically oriented array of amorphous rubrene (5,6,11,12-tetraphenylnaphthacene) nanowires. Compared to previously reported rubrene thin-film spin valves, rubrene nanowires exhibit significant suppression of spin relaxation. Our results indicate spin-orbit interaction to be the dominant mechanism and are consistent with recent theoretical works, which suggest spin admixture parameter as a crucial ingredient in determining spin relaxation length.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Inducing vortex formation in multilayered circular dots using remanent curves

Dong-Ok Kim, Dong Ryeol Lee, Yongseong Choi, Vitali Metlushko, Jihwey Park, Jae-Young Kim, and Ki Bong Lee

Appl. Phys. Lett. 101, 192404 (2012); http://dx.doi.org/10.1063/1.4766347 (4 pages)

Online Publication Date: 8 November 2012

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We report field manipulation of magnetic vortex states in Co(30 nm)/Cu(3 nm)/Ni80Fe20 (20 nm)-multilayer dot arrays via remanent curve. The element-resolved resonant x-ray magnetic measurements, combined with micromagnetic simulations, show vortex formation in the Co layer but not in the NiFe layer along the major hysteresis loop. Although the two magnetic layers are not directly coupled due to the presence of the Cu interlayer, the NiFe layer is strongly influenced by the dipolar field from uncompensated magnetic poles in the Co layer. Using remanent curves, we demonstrate that the single vortex state can be induced simultaneously in both layers.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Synthesis and magnetostrictive properties of Pr(Fe1.95B0.05)1.93 bulk nanocrystalline alloy

Y. G. Shi, C. C. Hu, J. Y. Fan, D. N. Shi, L. Y. Lv, and S. L. Tang

Appl. Phys. Lett. 101, 192405 (2012); http://dx.doi.org/10.1063/1.4767127 (4 pages) | Cited 1 time

Online Publication Date: 9 November 2012

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The structure, magnetic properties, and magnetostriction of Pr(Fe1.95B0.05)1.93 alloys prepared by annealing its precursor amorphous ribbons under high pressure were investigated. It was found that Pr(Fe1.95B0.05)1.93 single cubic Laves phase could be obtained only when the pressure is up to 3 GPa. The average grain size about 20 nm is found in the sample synthesized under 6 GPa. A large linear magnetostriction of 541 ppm at 3 kOe is observed in the Pr(Fe1.95B0.05)1.93 compound synthesized under 6 GPa, which is 25% larger than that under 3 GPa. The present work offers an effective method to obtain bulk nanocrystalline magnetostrictive compounds.
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75.75.Cd Fabrication of magnetic nanostructures
61.46.Hk Nanocrystals
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.80.+q Magnetomechanical effects, magnetostriction
81.40.Gh Other heat and thermomechanical treatments
62.50.-p High-pressure effects in solids and liquids

Spin-wave propagation and transformation in a thermal gradient

Björn Obry, Vitaliy I. Vasyuchka, Andrii V. Chumak, Alexander A. Serga, and Burkard Hillebrands

Appl. Phys. Lett. 101, 192406 (2012); http://dx.doi.org/10.1063/1.4767137 (4 pages)

Online Publication Date: 9 November 2012

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The influence of a thermal gradient on the propagation properties of externally excited dipolar spin waves in a magnetic insulator waveguide is investigated. It is shown that spin waves propagating towards a colder region along the magnetization direction continuously reduce their wavelength. The wavelength increase of a wave propagating into a hotter region was utilized to realize its decomposition in the partial waveguide modes which are reflected at different locations. This influence of temperature on spin-wave properties is mainly caused by a change in the saturation magnetization and yields promising opportunities for the manipulation of spin waves in spin-caloritronic applications.
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84.40.Az Waveguides, transmission lines, striplines
84.40.-x Radiowave and microwave (including millimeter wave) technology

Electrically induced decrease of magnetization in Ca3Mn2O7

Wenka Zhu, Li Pi, Yuanjie Huang, Shun Tan, and Yuheng Zhang

Appl. Phys. Lett. 101, 192407 (2012); http://dx.doi.org/10.1063/1.4767139 (4 pages)

Online Publication Date: 9 November 2012

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The magnetoelectric effect of Ca3Mn2O7 is verified by measuring the electric field dependence of magnetization. The magnetization is reduced by the electric field, as much as nearly 6% at 4 K under 100 Oe magnetic field and 40 kV/m electric field. There are two theoretical models in previous researches. Harris's model [A. B. Harris, Phys. Rev. B 84, 064116 (2011)], based on the rotating effect of electric field predicts electric-field-direction dependence of the magnetization decrease. Benedek and Fennie's model [N. A. Benedek and C. J. Fennie, Phys. Rev. Lett. 106, 107204 (2011)] emphasizes the stretching effect of electric field and predicts direction independence. The experimental results support Benedek and Fennie's framework and conflict with Harris's prediction. We argue that the large anisotropy and the antiferromagnetic nature impede the rotation of domains and suppress the rotating effect. In the coupling of magnetic ordering and ferroelectric ordering, the oxygen octahedron tilt distortion (X3−) plays an essential role.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.80.Fm Switching phenomena
75.85.+t Magnetoelectric effects, multiferroics
75.30.Gw Magnetic anisotropy
75.50.Ee Antiferromagnetics
75.60.Ch Domain walls and domain structure

Conductance of single-atom magnetic junctions: A first-principles study

Yi-qun Xie, Qiang Li, Lei Huang, Xiang Ye, and San-Huang Ke

Appl. Phys. Lett. 101, 192408 (2012); http://dx.doi.org/10.1063/1.4766733 (4 pages)

Online Publication Date: 9 November 2012

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We present a first-principles investigation to show that the contact conductance of a half conductance quantum (G0/2) found previously does not generally hold for single-atom magnetic junctions composed of a tip and an adatom adsorbed on a surface. The contact conductance of the Ni-Co/Co(111) junction is approximately G0/2, while for the Co-Co/Co(111), Ni-Ni/Ni(111), and Ni-Ni/Ni(001) junctions the contact conductances are 0.80G0, 1.55G0, and 1.77G0, respectively. The deviation from G0/2 is mainly caused by the variation of the spin-down conductance largely determined by the minority d orbitals, as the spin-up one changes little for different junctions.
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73.40.Jn Metal-to-metal contacts
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
71.15.-m Methods of electronic structure calculations
71.20.Gj Other metals and alloys
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Large and temperature-independent piezoelectric response in Pb(Mg1/3Nb2/3)O3-BaTiO3-PbTiO3

Lizhu Huang, Guorong Li, Desheng Fu, Jiangtao Zeng, Wei Ruan, Liaoying Zheng, and Huarong Zeng

Appl. Phys. Lett. 101, 192901 (2012); http://dx.doi.org/10.1063/1.4765347 (3 pages)

Online Publication Date: 5 November 2012

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The temperature dependence of elastic, dielectric, and piezoelectric properties of (65−x)[Pb(Mg1/3Nb2/3)O3]–xBaTiO3-35PbTiO3 ceramics with x = 0, 1, 2, 3, and 4 was investigated. Compound with x = 2 was found to exhibit a large piezoelectric response (d31 ≈ −170 pC/N, d33 ≈ 530 pC/N at 300 K). Particularly, its d31 value was nearly a constant over a temperature range from 185 to 360 K. A broad ferroelectric phase transition tuned by BaTiO3 doping was deduced from the dielectric constant, elastic compliance constant, and Raman spectra. The temperature-stable piezoelectric response was attributed to the counter-balance of contributions from the dielectric and elastic responses.
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77.65.Bn Piezoelectric and electrostrictive constants
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.dq Other elastic constants
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.22.Ch Permittivity (dielectric function)

Role of measurement voltage on hysteresis loop shape in Piezoresponse Force Microscopy

E. Strelcov, Y. Kim, J. C. Yang, Y. H. Chu, P. Yu, X. Lu, S. Jesse, and S. V. Kalinin

Appl. Phys. Lett. 101, 192902 (2012); http://dx.doi.org/10.1063/1.4764939 (4 pages) | Cited 1 time

Online Publication Date: 7 November 2012

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The dependence of field-on and field-off hysteresis loop shape in Piezoresponse Force Microscopy (PFM) on driving voltage, Vac, is explored. A nontrivial dependence of hysteresis loop parameters on measurement conditions is observed. The strategies to distinguish between paraelectric and ferroelectric states with small coercive bias and separate reversible hysteretic and non-hysteretic behaviors are suggested. Generally, measurement of loop evolution with Vac is a necessary step to establish the veracity of PFM hysteresis measurements.
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77.80.Dj Domain structure; hysteresis
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Single-crystalline BiFeO3 nanowires and their ferroelectric behavior

Shun Li, Riad Nechache, Catalin Harnagea, Liliya Nikolova, and Federico Rosei

Appl. Phys. Lett. 101, 192903 (2012); http://dx.doi.org/10.1063/1.4766343 (5 pages) | Cited 1 time

Online Publication Date: 8 November 2012

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We report the ferroelectric properties of single-crystalline BiFeO3 nanowires using piezoresponse force microscopy (PFM). The nanowires, synthesized by a hydrothermal approach, have a rhombohedral perovskite structure and a preferential growth of the (211) crystallographic plane perpendicular to the wire axis, as revealed by x-ray and electron diffraction investigations. PFM measurements reveal that the as-synthesized BiFeO3 nanowires, down to 40 nm in diameter, have components of spontaneous polarization along both the axial and radial directions, thereby demonstrating the ferroelectric nature of the wires. The results indicate that such ferroelectric BiFeO3 nanowires should provide promising opportunity for nanoscale nonvolatile memory devices.
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77.80.Dj Domain structure; hysteresis
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.Gf Nanowires
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects

Excellent dielectric properties of anisotropic polymer composites filled with parallel aligned zinc flakes

Ye Zhang, Yao Wang, Yuan Deng, Yanjingtian Guo, Wencheng Bi, Mao Li, Yu Luo, and Jinbo Bai

Appl. Phys. Lett. 101, 192904 (2012); http://dx.doi.org/10.1063/1.4766923 (4 pages)

Online Publication Date: 8 November 2012

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Orderly polymer composites based on polyvinylidene fluoride assembled with parallel aligned zinc flakes were fabricated by a simple process. It is interesting to note that the microstructure of parallel arrangement could introduce excellent dielectric properties with obvious anisotropic dielectric behaviors. The dielectric constant in the parallel direction was obviously higher than that of the perpendicular direction. And the anisotropic intensity of interfacial polarization is proposed to interpret the anisotropic dielectric constant. Also, an equivalent circuit model of two parallel RC circuits in series, based on the analysis of impedance data, is employed to further discuss the anisotropic dielectric behavior.
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77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.84.Lf Composite materials
81.05.Qk Reinforced polymers and polymer-based composites
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A little ribbing: Flux starvation engineering for rippled indium tin oxide nanotree branches

Ryan T. Tucker, Allan L. Beaudry, Joshua M. LaForge, Michael T. Taschuk, and Michael J. Brett

Appl. Phys. Lett. 101, 193101 (2012); http://dx.doi.org/10.1063/1.4764508 (4 pages) | Cited 1 time

Online Publication Date: 5 November 2012

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Combining vapour-liquid-solid growth with glancing angle deposition (VLS-GLAD) facilitates fabrication of branched nanowires not possible with either technique alone. Indium tin oxide (ITO) nanostructures grown by VLS-GLAD produce extremely porous nanotree structures, where periodic branch diameter oscillations are sometimes observed. We explain this rippled branch growth with a simple model linking the physics governing branch growth to the process variables controlled in VLS-GLAD. The model is verified by inducing specific, aperiodic ripples onto growing ITO branches through macroscopic vapour flux control and manipulation of local shadowing.
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81.07.Bc Nanocrystalline materials
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.10.Bk Growth from vapor
61.43.Gt Powders, porous materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Effects of laser irradiation on the self-assembly of MnAs nanoparticles in a GaAs matrix

Pham Nam Hai, Wataru Nomura, Takashi Yatsui, Motoichi Ohtsu, and Masaaki Tanaka

Appl. Phys. Lett. 101, 193102 (2012); http://dx.doi.org/10.1063/1.4765355 (4 pages)

Online Publication Date: 6 November 2012

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We investigate the effects of laser irradiation on the self-assembly of MnAs nanoparticles during solid-phase decomposition in a GaAs matrix. It is found that laser irradiation suppresses the growth of MnAs nanoparticles from small to large size, and that the median diameter D1 in the size distribution of small MnAs nanoparticles depends on the incident photon energy E following D1 ∼ E−1/5. We explain this behavior by the desorption of Mn atoms on the MnAs nanoparticle surface due to resonant optical absorption, in which incident photons excite intersubband electronic transitions between the quantized energy levels in the MnAs nanoparticles.
Show PACS
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Kj Amorphous and quasicrystalline magnetic materials
81.16.Dn Self-assembly
68.43.Nr Desorption kinetics
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