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5 Nov 2012

Volume 101, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 101, 193101 (2012); http://dx.doi.org/10.1063/1.4764508 (4 pages)

Ryan T. Tucker, Allan L. Beaudry, Joshua M. LaForge, Michael T. Taschuk, and Michael J. Brett
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Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

L. K. Swanson, P. Fiorenza, F. Giannazzo, A. Frazzetto, and F. Roccaforte

Appl. Phys. Lett. 101, 193501 (2012); http://dx.doi.org/10.1063/1.4766175 (4 pages)

Online Publication Date: 6 November 2012

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This letter reports on the electrical properties of SiO2/4H-SiC interfaces after post-oxidation annealing (POA) in N2O and POCl3. The notably higher channel mobility measured in 4H-SiC MOSFETs subjected to POA in POCl3 was ascribed both to a reduction of the interface traps density and to an increase of donor concentration incorporated in SiC. Scanning spreading resistance microscopy on a SiC surface directly exposed to POA revealed that the incorporation of P-related shallow donors upon POA in POCl3 is more efficient than N-shallow donors incorporation during N2O treatments which subsequently explains the significantly enhanced channel conductivity of the MOSFETs.
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85.30.Tv Field effect devices

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

M. Lanza, G. Bersuker, M. Porti, E. Miranda, M. Nafría, and X. Aymerich

Appl. Phys. Lett. 101, 193502 (2012); http://dx.doi.org/10.1063/1.4765342 (5 pages) | Cited 1 time

Online Publication Date: 6 November 2012

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Overcoming challenges associated with implementation of resistive random access memory technology for non-volatile information storage requires identifying the material characteristics responsible for resistive switching. In order to connect the switching phenomenon to the nano-scale morphological features of the dielectrics employed in memory cells, we applied the enhanced conductive atomic force microscopy technique for in situ analysis of the simultaneously collected electrical and topographical data on HfO2 stacks of various degrees of crystallinity. We demonstrate that the resistive switching is a local phenomenon associated with the formation of a conductive filament with a sufficiently small cross-section, which is determined by the maximum passing current. Switchable filament is found to be formed at the dielectric sites where the forming voltages were sufficiently small, which, in the case of the stoichiometric HfO2, is observed exclusively at the grain boundary regions representing low resistant conductive paths through the dielectric film.
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84.30.Sk Pulse and digital circuits
61.72.Mm Grain and twin boundaries
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Distant mechanical sensors based on cholesteric liquid crystals

Petr V. Shibaev and Cristina Schlesier

Appl. Phys. Lett. 101, 193503 (2012); http://dx.doi.org/10.1063/1.4764525 (3 pages)

Online Publication Date: 8 November 2012

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The improved performance is demonstrated for mechanical sensors based on cholesteric paint covering elastic silicone substrate with imprinted grooves. Due to the presence of the grooves, the deformation of the substrate is translated to the deformation of the cholesteric paint differently along the grooves and perpendicular to them. The model is suggested to describe the anisotropy of deformations and color changes.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep
62.20.D- Elasticity
62.20.F- Deformation and plasticity

The role of upstream distal electrodes in mitigating electrochemical degradation of ionic liquid ion sources

Natalya Brikner and Paulo C. Lozano

Appl. Phys. Lett. 101, 193504 (2012); http://dx.doi.org/10.1063/1.4766293 (4 pages)

Online Publication Date: 9 November 2012

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Ionic liquid ion sources produce molecular ions from micro-tip emitters wetted with room-temperature molten salts. When a single ion polarity is extracted, counterions accumulate and generate electrochemical reactions that limit the source lifetime. The dynamics of double layer formation are reviewed and distal electrode contacts are introduced to resolve detrimental electrochemical decomposition effects at the micro-tip apex. By having the emitter follow the ionic liquid potential, operation can be achieved for an extended period of time with no apparent degradation of the material, indicating that electrochemistry can be curtailed and isolated to the upstream distal electrode.
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82.45.Fk Electrodes
82.30.-b Specific chemical reactions; reaction mechanisms
82.40.-g Chemical kinetics and reactions: special regimes and techniques

Wheatstone bridge piezoresistive sensing for bulk-mode micromechanical resonator

Guoqiang Wu, Dehui Xu, Bin Xiong, and Yuelin Wang

Appl. Phys. Lett. 101, 193505 (2012); http://dx.doi.org/10.1063/1.4766441 (4 pages)

Online Publication Date: 9 November 2012

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A balanced wheatstone bridge technique for piezoresistive detection in micromechanical resonators is demonstrated. Two identical beam resonators, which vibrate in the length extensional mode with 180° phase shift, are connected in serial to compose a wheatstone bridge. With the differential actuation configuration, this approach eliminates the capacitive feedthrough signal, which may heavily bury the piezoresistive signal of the resonator in traditional piezoresistive sensing approach. The proposed technique is experimentally validated. Experimental results show that the capacitive signal embedded in the piezoresistive sensing approach is nearly eliminated. This method provides an effective way for purely piezoresistive sensing of micromechanical resonators.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems

Piezoelectric nanogenerator based on zinc oxide nanorods grown on textile cotton fabric

Azam Khan, Mazhar Ali Abbasi, Mushtaque Hussain, Zafar Hussain Ibupoto, Jonas Wissting, Omer Nur, and Magnus Willander

Appl. Phys. Lett. 101, 193506 (2012); http://dx.doi.org/10.1063/1.4766921 (4 pages) | Cited 1 time

Online Publication Date: 9 November 2012

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This investigation explores piezoelectricity generation from ZnO nanorods, which were grown on silver coated textile cotton fabrics using the low temperature aqueous chemical growth method. The morphology and crystal structure studies were carried out by x-ray diffraction, scanning electron microscopic and high resolution transmission electron microscopic techniques, respectively. ZnO nanorods were highly dense, well aligned, uniform in spatial distribution and exhibited good crystal quality. The generation of piezoelectricity from fabricated ZnO nanorods grown on textile cotton fabrics was measured using contact mode atomic force microscopy. The average output voltage generated from ZnO nanorods was measured to be around 9.5 mV. This investigation is an important achievement regarding the piezoelectricity generation on textile cotton fabric substrate. The fabrication of this device provides an alternative approach for a flexible substrate to develop devices for energy harvesting and optoelectronic technology on textiles.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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